UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)

Angewandte Chemie (International ed.), 2015-06, Vol.54 (27), p.7764-7769

Amano, Hiroshi

International ed. in English, 2015

Volltextzugriff (PDF)

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Nature photonics, 2019-04, Vol.13 (4), p.233-244

2019

Volltextzugriff (PDF)

Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

Progress in crystal growth and characterization of materials, 2016-06, Vol.62 (2), p.126-135

Amano, Hiroshi

2016

Volltextzugriff (PDF)

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

Applied physics express, 2019-11, Vol.12 (12), p.124003

2019

Volltextzugriff (PDF)

III-Nitride Based Light Emitting Diodes and Applications

2017

Volltextzugriff (PDF)

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture)

Annalen der Physik, 2015-06, Vol.527 (5-6), p.327-333

Amano, Hiroshi

2015

Volltextzugriff (PDF)

Factors Affecting the Outcomes of Double-Bundle Medial Patellofemoral Ligament Reconstruction for Recurrent Patellar Dislocations Evaluated by Multivariate Analysis

The American journal of sports medicine, 2015-12, Vol.43 (12), p.2988-2996

2015

Volltextzugriff (PDF)

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Applied physics letters, 2018-04, Vol.112 (18)

2018

Volltextzugriff (PDF)

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing

Applied physics letters, 2022-11, Vol.121 (22)

2022

Volltextzugriff (PDF)

Inactivation characteristics of a 280 nm Deep-UV irradiation dose on aerosolized SARS-CoV-2

Environment international, 2023-07, Vol.177, p.108022-108022, Article 108022

2023

Volltextzugriff (PDF)

Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

Reviews of modern physics, 2015-10, Vol.87 (4), p.1133-1138

Amano, Hiroshi

2015

Volltextzugriff (PDF)

Characteristics of collection and inactivation of virus in air flowing inside a winding conduit equipped with 280 nm deep UV-LEDs

Environment international, 2022-12, Vol.170, p.107580-107580, Article 107580

2022

Volltextzugriff (PDF)

Importance of functional performance and psychological readiness for return to preinjury level of sports 1 year after ACL reconstruction in competitive athletes

Knee surgery, sports traumatology, arthroscopy : official journal of the ESSKA, 2020-07, Vol.28 (7), p.2203-2212

2020

Volltextzugriff (PDF)

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection

Applied physics express, 2022-04, Vol.15 (4), p.41007

2022

Volltextzugriff (PDF)

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

Japanese Journal of Applied Physics, 2006-12, Vol.45 (12R), p.9001

2006

Volltextzugriff (PDF)

Phytoseiid mites under environmental stress

Biological control, 2016-05, Vol.96, p.120-134

2016

Volltextzugriff (PDF)

Direct Anterior Cruciate Ligament Insertion to the Femur Assessed by Histology and 3-Dimensional Volume-Rendered Computed Tomography

Arthroscopy, 2010-09, Vol.26 (9), p.S13-S20

2010

Volltextzugriff (PDF)

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers

Applied physics express, 2021-08, Vol.14 (8), p.84004

2021

Volltextzugriff (PDF)

MOVPE growth and high-temperature annealing of (101¯0) AlN layers on (101¯0) sapphire

Journal of crystal growth, 2018-11, Vol.502, p.14-18

2018

Volltextzugriff (PDF)

Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes

Journal of alloys and compounds, 2019-08, Vol.796, p.146-152

2019

Volltextzugriff (PDF)

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current

Applied physics letters, 2019-06, Vol.114 (23)

2019

Volltextzugriff (PDF)

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Applied physics express, 2011-05, Vol.4 (5), p.52101

2011

Volltextzugriff (PDF)

Multiple electron beam generation from InGaN photocathode

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-12, Vol.39 (6)

2021

Volltextzugriff (PDF)

Design and characterization of a low-optical-loss UV-C laser diode

Japanese Journal of Applied Physics, 2020-09, Vol.59 (9), p.94001

2020

Volltextzugriff (PDF)

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Applied physics letters, 2017-09, Vol.111 (12)

2017

Volltextzugriff (PDF)

1 – 25 von 3.028

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(2.228)
Mit Volltextzugriff
(2.473)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Englisch
(2.682)
Japanisch
(1.321)
Chinesisch
(2)
Russisch
(2)
Französisch
(1)
Deutsch
(1)

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(1.529)
Life Sciences & Biomedicine
(860)
Humans
(581)
Physical Sciences
(581)
Physics
(488)
Male
(436)
Physics, Applied
(399)
Female
(389)
Technology
(320)
Aged
(259)
Middle Aged
(258)
Biological And Medical Sciences
(233)
Materials Science
(215)
Animals
(213)
Adult
(181)
Materials Science, Multidisciplinary
(178)
Medical Sciences
(147)
Cardiovascular System & Cardiology
(128)
Gallium Nitrides
(125)
Engineering
(115)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

III-Nitride Based Light Emitting Diodes and Applications

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture)

Factors Affecting the Outcomes of Double-Bundle Medial Patellofemoral Ligament Reconstruction for Recurrent Patellar Dislocations Evaluated by Multivariate Analysis

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing

Inactivation characteristics of a 280 nm Deep-UV irradiation dose on aerosolized SARS-CoV-2

Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

Characteristics of collection and inactivation of virus in air flowing inside a winding conduit equipped with 280 nm deep UV-LEDs

Importance of functional performance and psychological readiness for return to preinjury level of sports 1 year after ACL reconstruction in competitive athletes

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

Phytoseiid mites under environmental stress

Direct Anterior Cruciate Ligament Insertion to the Femur Assessed by Histology and 3-Dimensional Volume-Rendered Computed Tomography

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers

MOVPE growth and high-temperature annealing of (101¯0) AlN layers on (101¯0) sapphire

Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Multiple electron beam generation from InGaN photocathode

Design and characterization of a low-optical-loss UV-C laser diode

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Suchergebnisse filtern