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150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

IEEE electron device letters, 2012-10, Vol.33 (10), p.1372-1374

2012

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110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates

Applied physics express, 2010-12, Vol.3 (12), p.124101

2010

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205-GHz (Al,In)N/GaN HEMTs

IEEE electron device letters, 2010-09, Vol.31 (9), p.957-959

2010

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(InP) HEMT Small-Signal Equivalent-Circuit Extraction as a Function of Temperature

IEEE transactions on microwave theory and techniques, 2015-09, Vol.63 (9), p.2751-2755

2015

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Fully Passivated AlInN/GaN HEMTs With fT/fMAX of 205/220 GHz

IEEE electron device letters, 2011-10, Vol.32 (10), p.1364-1366

2011

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High-Performance 0.1-μm Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

IEEE electron device letters, 2009-02, Vol.30 (2), p.107-109

2009

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Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 K

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.787-792

2013

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InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption

IEEE electron device letters, 2012-02, Vol.33 (2), p.209-211

2012

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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

IEEE electron device letters, 2010-04, Vol.31 (4), p.296-298

2010

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHz

IEEE electron device letters, 2010-04, Vol.31 (4), p.293-295

2010

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Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation

IEEE electron device letters, 2011-08, Vol.32 (8), p.1056-1058

2011

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Electrostatic Actuation and Electromechanical Switching Behavior of One-Dimensional Nanostructures

ACS nano, 2009-10, Vol.3 (10), p.2953-2964

2009

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InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

IEEE electron device letters, 2011-05, Vol.32 (5), p.629-631

2011

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400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

IEEE electron device letters, 2010-10, Vol.31 (10), p.1122-1124

2010

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Submicrometer Copper T-Gate AlGaN/GaN HFETs: The Gate Metal Stack Effect

IEEE electron device letters, 2007-05, Vol.28 (5), p.350-353

2007

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Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates

Applied physics express, 2009-11, Vol.2 (11), p.111002

2009

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High-speed and low-noise AlInN/GaN HEMTs on SiC

Physica status solidi. A, Applications and materials science, 2011-02, Vol.208 (2), p.429-433

2011

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Low-Noise Microwave Performance of 0.1 μm Gate AlInN/GaN HEMTs on SiC

IEEE microwave and wireless components letters, 2010-08, Vol.20 (8), p.453-455

2010

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Millimeter-wave GaN-based HEMT development at ETH-Zürich

International journal of microwave and wireless technologies, 2010-02, Vol.2 (1), p.33-38

2010

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Fully Passivated AlInN/GaN HEMTs With f/f of 205/220 GHz

IEEE electron device letters, 2011-10, Vol.32 (10), p.1364-1366

2011

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102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

IEEE electron device letters, 2009-08, Vol.30 (8), p.796-798

2009

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Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F T = 143 GHz

Applied physics express, 2010-09, Vol.3 (9), p.94101

2010

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Fully Passivated AlInN/GaN HEMTs With [Formula Omitted] of 205/220 GHz

IEEE electron device letters, 2011-10, Vol.32 (10), p.1364

2011

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Fully Passivated AlInN/GaN HEMTs With f rm T / f rm MAX of 205/220 GHz

IEEE electron device letters, 2011-10, Vol.32 (10), p.1364-1366

2011

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F rm T = hbox 144 Unknown character hbox GHz

IEEE electron device letters, 2010-04, Vol.31 (1-4), p.293-295

2010

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150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates

205-GHz (Al,In)N/GaN HEMTs

(InP) HEMT Small-Signal Equivalent-Circuit Extraction as a Function of Temperature

Fully Passivated AlInN/GaN HEMTs With fT/fMAX of 205/220 GHz

High-Performance 0.1-μm Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 K

InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption

107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHz

Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation

Electrostatic Actuation and Electromechanical Switching Behavior of One-Dimensional Nanostructures

InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Submicrometer Copper T-Gate AlGaN/GaN HFETs: The Gate Metal Stack Effect

Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates

High-speed and low-noise AlInN/GaN HEMTs on SiC

Low-Noise Microwave Performance of 0.1 μm Gate AlInN/GaN HEMTs on SiC

Millimeter-wave GaN-based HEMT development at ETH-Zürich

Fully Passivated AlInN/GaN HEMTs With f/f of 205/220 GHz

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F T = 143 GHz

Fully Passivated AlInN/GaN HEMTs With [Formula Omitted] of 205/220 GHz

Fully Passivated AlInN/GaN HEMTs With f rm T / f rm MAX of 205/220 GHz

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F rm T = hbox 144 Unknown character hbox GHz

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