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Stability evaluation of ZnO nanosheet based source-gated transistors

Scientific reports, 2019-02, Vol.9 (1), p.2979-2979, Article 2979

2019

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Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing

Ultrasonics, 2021-07, Vol.114, p.106410-106410, Article 106410

2021

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A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations

Scientific reports, 2017-11, Vol.7 (1), p.15187-10, Article 15187

2017

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Integrating porous silicon layer backing to capacitive micromachined ultrasonic transducers (CMUT)-based linear arrays for acoustic Lamb wave attenuation

Journal of applied physics, 2022-03, Vol.131 (10)

2022

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Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

Nanoscale research letters, 2018-08, Vol.13 (1), p.249-9, Article 249

2018

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Single-crystalline ZnO sheet Source-Gated Transistors

Scientific reports, 2016-01, Vol.6 (1), p.19232-19232, Article 19232

2016

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Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Journal of applied physics, 2014-08, Vol.116 (5)

2014

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Fabrication of field-effect transistors and functional nanogenerators using hydrothermally grown ZnO nanowires

RSC advances, 2015-01, Vol.5 (86), p.69925-69931

2015

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Evidence of electrical activity of extended defects in 3C-SiC grown on Si

Applied physics letters, 2010-04, Vol.96 (14), p.142104-142104-3

2010

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Universal model for defect-related visible luminescence in ZnO nanorods

RSC advances, 2016-01, Vol.6 (77), p.73170-73175

2016

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Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

Applied surface science, 2015-11, Vol.355, p.1044-1050

2015

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Zinc oxide nanowire-parylene nanocomposite based stretchable piezoelectric nanogenerators for self-powered wearable electronics

Journal of physics. Conference series, 2018, Vol.1052 (1), p.12028

2018

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Gallium nitride surface protection during RTA annealing with a GaOxNy cap-layer

Semiconductor science and technology, 2016-03, Vol.31 (4)

2016

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Progresses in cMUT device fabrication using low temperature processes

Journal of micromechanics and microengineering, 2014-04, Vol.24 (4), p.45020-12

2014

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Low temperature capacitive micromachined ultrasonic transducers (cMUTs) on glass substrate

Journal of micromechanics and microengineering, 2016-11, Vol.26 (11), p.115023

2016

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Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

Thin solid films, 2014-11, Vol.571, p.567-572

2014

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Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

Journal of applied physics, 2012-03, Vol.111 (5), p.053507-053507-8

2012

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Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-04, Vol.372, p.67-71

2016

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Original 3C-SiC micro-structure on a 3C–SiC pseudo-substrate

Microelectronic engineering, 2013-05, Vol.105, p.65-67

2013

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Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.272, p.137-140

2012

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A new approach for AFM cantilever elaboration with 3C-SiC

Materials letters, 2012-06, Vol.77, p.54-56

2012

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Progress in 3C-SiC Growth and Novel Applications

Materials science forum, 2012, Vol.711, p.3-10

2012

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Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

Materials science forum, 2012, Vol.711, p.104-108

2012

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High Quality 3C-SiC Substrate for MOSFET Fabrication

Materials science forum, 2012, Vol.711, p.91-98

2012

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Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

Materials science forum, 2012, Vol.711, p.169-173

2012

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Stability evaluation of ZnO nanosheet based source-gated transistors

Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing

A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations

Integrating porous silicon layer backing to capacitive micromachined ultrasonic transducers (CMUT)-based linear arrays for acoustic Lamb wave attenuation

Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

Single-crystalline ZnO sheet Source-Gated Transistors

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Fabrication of field-effect transistors and functional nanogenerators using hydrothermally grown ZnO nanowires

Evidence of electrical activity of extended defects in 3C-SiC grown on Si

Universal model for defect-related visible luminescence in ZnO nanorods

Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

Zinc oxide nanowire-parylene nanocomposite based stretchable piezoelectric nanogenerators for self-powered wearable electronics

Gallium nitride surface protection during RTA annealing with a GaOxNy cap-layer

Progresses in cMUT device fabrication using low temperature processes

Low temperature capacitive micromachined ultrasonic transducers (cMUTs) on glass substrate

Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

Original 3C-SiC micro-structure on a 3C–SiC pseudo-substrate

Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers

A new approach for AFM cantilever elaboration with 3C-SiC

Progress in 3C-SiC Growth and Novel Applications

Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

High Quality 3C-SiC Substrate for MOSFET Fabrication

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

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