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A universal tool for stability predictions of biotherapeutics, vaccines and in vitro diagnostic products

Scientific reports, 2023-06, Vol.13 (1), p.10077-10077, Article 10077

2023

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Al2O3 tunnel barrier as a good candidate for spin injection into silicon

Solid-state electronics, 2010-08, Vol.54 (8), p.741-744

2010

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Magnetic and electrical characterization of “ferromagnet/insulator/silicon” diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-01, Vol.126 (2), p.168-171

2006

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A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

Journal of physics. Conference series, 2008-08, Vol.126 (1), p.012002

2008

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Raised source/drains for 50nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy

Solid-state electronics, 2005-04, Vol.49 (4), p.529-534

2005

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Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma

Microelectronic engineering, 1995-12, Vol.29 (1), p.45-48

1995

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Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy

Solid-state electronics, 2005-04, Vol.49 (4), p.529-534

2005

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Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1816-1821

2001

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Device processing and integration of ferroelectric thin films for memory applications

Microelectronic engineering, 1995-12, Vol.29 (1), p.19-28

1995

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Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon

Applied physics letters, 2007-05, Vol.90 (19), p.192508-192508-3

2007

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Al sub(2)O sub(3) tunnel barrier as a good candidate for spin injection into silicon

Solid-state electronics, 2010-08, Vol.54 (8), p.741-744

2010

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Al 2O 3 tunnel barrier as a good candidate for spin injection into silicon

Solid-state electronics, 2010, Vol.54 (8), p.741-744

2010

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Nickel vs. cobalt silicide integration for sub-50nm CMOS

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.215-218

2003

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High Temperature Oxide (HTO) for non volatile memories applications

Microelectronic engineering, 1997-06, Vol.36 (1), p.87-90

1997

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Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.223-226

2003

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Magnetic and electrical characterization of "ferromagnet/insulator/silicon" diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2006, Vol.123, n° 2-3, p.168-171

2006

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Physical properties of radio-frequency magnetron sputtered Pb(Zr,Ti)O3 thin films: Direct determination of oxygen composition by Rutherford backscattering spectroscopy and nuclear reaction analysis

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1993-09, Vol.11 (5), p.2808-2815

1993

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TORE SUPRA first-wall description and behaviour during the initial plasma experiments

Journal of nuclear materials, 1989-04, Vol.162, p.162-171

1989

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Physicochemical and Microstructural Characterization of Rf Sputtering Magnetron Pb(ZrTi)O3 Thin Films

MRS proceedings, 1993, Vol.310

1993

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Study of dashed seed lines and capping layers for laser seeded zone melting recrystallization

Applied surface science, 1989, Vol.36 (1), p.623-631

1989

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Full CMP integration of CVD TiN damascene sub-0.1-/spl mu/m metal gate devices for ULSI applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1816-1821

2001

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Full CMP integration of CVD TiN damascene sub-0.1-mum metal gate devices for ULSI applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1816-1821

2001

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Full CMP integration of CVD TiN damascene sub-0.1-[mu]m metal gate devices for ULSI applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1816

2001

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Tuberculization of the Negro: A Letter

Journal of the National Medical Association, 1912-07, Vol.4 (3), p.224-226

Achard, H J

1912

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The Lust of Slander

JAMA : the journal of the American Medical Association, 1903-09, Vol.XLI (12), p.734

Achard, H. J.

1903

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A universal tool for stability predictions of biotherapeutics, vaccines and in vitro diagnostic products

Al2O3 tunnel barrier as a good candidate for spin injection into silicon

Magnetic and electrical characterization of “ferromagnet/insulator/silicon” diodes

A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

Raised source/drains for 50nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy

Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma

Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy

Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications

Device processing and integration of ferroelectric thin films for memory applications

Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon

Al sub(2)O sub(3) tunnel barrier as a good candidate for spin injection into silicon

Al 2O 3 tunnel barrier as a good candidate for spin injection into silicon

Nickel vs. cobalt silicide integration for sub-50nm CMOS

High Temperature Oxide (HTO) for non volatile memories applications

Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects

Magnetic and electrical characterization of "ferromagnet/insulator/silicon" diodes

Physical properties of radio-frequency magnetron sputtered Pb(Zr,Ti)O3 thin films: Direct determination of oxygen composition by Rutherford backscattering spectroscopy and nuclear reaction analysis

TORE SUPRA first-wall description and behaviour during the initial plasma experiments

Physicochemical and Microstructural Characterization of Rf Sputtering Magnetron Pb(ZrTi)O3 Thin Films

Study of dashed seed lines and capping layers for laser seeded zone melting recrystallization

Full CMP integration of CVD TiN damascene sub-0.1-/spl mu/m metal gate devices for ULSI applications

Full CMP integration of CVD TiN damascene sub-0.1-mum metal gate devices for ULSI applications

Full CMP integration of CVD TiN damascene sub-0.1-[mu]m metal gate devices for ULSI applications

Tuberculization of the Negro: A Letter

The Lust of Slander

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