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Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.19-26

2018

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Tinea Nigra: Dermoscopic Findings

Actas dermo-sifiliográficas (English ed.), 2021-06, Vol.112 (6), p.539-540

2021

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The Living With a Star Space Environment Testbed Payload

IEEE transactions on nuclear science, 2023-03, Vol.70 (3), p.1-1

2023

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Effectiveness of Internal Versus External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2259-2266

2008

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Becker Nevus: 4 Cases of a Rare Syndrome

Actas dermo-sifiliográficas (English ed.), 2021-03, Vol.112 (3), p.282-283

2021

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32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2702-2710

2011

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Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2904-2910

2011

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Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3394-3400

2008

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Nuclear data for space exploration

Frontiers in astronomy and space sciences, 2023-09, Vol.10 (N/A)

2023

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The Susceptibility of 45 and 32 nm Bulk CMOS Latches to Low-Energy Protons

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2711-2718

2011

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Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2880-2885

2008

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Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1827-1834

2010

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SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3217-3222

2006

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Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3011-3015

2012

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Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.898-903

2007

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Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2628-2636

2011

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Hardness Assurance Testing for Proton Direct Ionization Effects

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.1197-1202

2012

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A Comprehensive Methodology for Complex Field Programmable Gate Array Single Event Effects Test and Evaluation

IEEE transactions on nuclear science, 2009-04, Vol.56 (2), p.366-374

2009

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Single-Event Response of 22-nm Fully Depleted Silicon-on-Insulator Static Random Access Memory

IEEE transactions on nuclear science, 2021-04, Vol.68 (4), p.402-409

2021

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Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4457-4463

2013

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Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3280-3284

2009

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Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.332-337

2017

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Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2831-2836

2012

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Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2968-2975

2011

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Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.325-331

2017

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Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

Tinea Nigra: Dermoscopic Findings

The Living With a Star Space Environment Testbed Payload

Effectiveness of Internal Versus External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis

Becker Nevus: 4 Cases of a Rare Syndrome

32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches

Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

Nuclear data for space exploration

The Susceptibility of 45 and 32 nm Bulk CMOS Latches to Low-Energy Protons

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure

Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

Hardness Assurance Testing for Proton Direct Ionization Effects

A Comprehensive Methodology for Complex Field Programmable Gate Array Single Event Effects Test and Evaluation

Single-Event Response of 22-nm Fully Depleted Silicon-on-Insulator Static Random Access Memory

Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

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