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Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

IEEE transactions on electron devices, 1998-12, Vol.45 (12), p.2505-2513

Asenov, A.

1998

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Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1254-1260

2003

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Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1837-1852

2003

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A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2213-2222

2007

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Thorough Understanding of Retention Time of Z2FET Memory Operation

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.383-388

2019

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Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.3056-3063

2007

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Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using "Ab Initio" Ionized Impurity Scattering

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3251-3258

2008

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How the Flat Field Transistor (FFT) can enable the continuation of DRAM scaling

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.221-224

2023

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Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2255-2263

2009

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Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

IEEE transactions on electron devices, 2002-01, Vol.49 (1), p.112-119

2002

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Modelling passenger service rate at a transport hub serviced by a single urban bus route as a queueing system

IOP conference series. Materials Science and Engineering, 2019-10, Vol.664 (1), p.12034

2019

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RTS amplitudes in decananometer MOSFETs: 3-D simulation study

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.839-845

2003

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ЕVALUATION OF THE SIGNIFICANCE OF PSYCHOMOTOR QUALITIES IN TAEKWONDO

Trakia journal of sciences, 2023-12, Vol.21 (Suppl.1), p.380-383

A. Asenov

2023

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EVALUATION OF THE EFFECTIVENESS OF THE TECHNICAL CHARACTERISTICS OF TAEKWONDO AS PART OF THE MODEL CHARACTERISTICS OF THE COMPETITIVE EVENT - SPARRING IN TAEKWONDO

Trakia journal of sciences, 2023-12, Vol.21 (Suppl.1), p.384-388

A. Asenov

2023

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Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1388-1395

2009

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Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET

IEEE electron device letters, 2008-06, Vol.29 (6), p.609-611

2008

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Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review

Microelectronics and reliability, 2014-04, Vol.54 (4), p.682-697

2014

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Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

IEEE transactions on electron devices, 2001-04, Vol.48 (4), p.722-729

2001

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Simulation of Statistical NBTI Degradation in 10nm Doped Channel pFinFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

IEEE electron device letters, 2008-08, Vol.29 (8), p.946-948

2008

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Studies on the thermochemical energy storage in the coal ash zeolite/water system

IOP conference series. Materials Science and Engineering, 2021-01, Vol.1032 (1), p.12033

2021

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Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

IEEE transactions on electron devices, 1999-08, Vol.46 (8), p.1718-1724

1999

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(Invited) Process Variability for Devices at and Beyond the 7 nm Node

ECS transactions, 2018-04, Vol.85 (8), p.113-124

2018

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Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1878-1884

2012

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Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

Physica A, 2014-03, Vol.398, p.194-198

2014

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Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

Thorough Understanding of Retention Time of Z2FET Memory Operation

Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture

Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using "Ab Initio" Ionized Impurity Scattering

How the Flat Field Transistor (FFT) can enable the continuation of DRAM scaling

Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study

Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

Modelling passenger service rate at a transport hub serviced by a single urban bus route as a queueing system

RTS amplitudes in decananometer MOSFETs: 3-D simulation study

ЕVALUATION OF THE SIGNIFICANCE OF PSYCHOMOTOR QUALITIES IN TAEKWONDO

EVALUATION OF THE EFFECTIVENESS OF THE TECHNICAL CHARACTERISTICS OF TAEKWONDO AS PART OF THE MODEL CHARACTERISTICS OF THE COMPETITIVE EVENT - SPARRING IN TAEKWONDO

Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET

Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

Simulation of Statistical NBTI Degradation in 10nm Doped Channel pFinFETs

Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

Studies on the thermochemical energy storage in the coal ash zeolite/water system

Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

(Invited) Process Variability for Devices at and Beyond the 7 nm Node

Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature

Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

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