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Correlation between pit formation and phase separation in thick InGaN film on a Si substrate

Current applied physics, 2018-12, p.1558-1563

2018

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Phase separation suppression in InxGa1xN on a Si substrate using an indium modulation technique

Current Applied Physics, 2017, 17(8), , pp.1142-1147

2017

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Phase separation suppression in InxGa1xN on a Si substrate using an indium modulation technique

Current applied physics, 2017-08, p.1142-1147

2017

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Correlation between pit formation and phase separation in thick InGaN film on a Si substrate

Current Applied Physics, 2018, 18(12), , pp.1558-1563

2018

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Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

Current Applied Physics, 2015, 15(9), , pp.1027-2031

2015

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Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

Current applied physics, 2015-09, p.1027-2031

2015

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1-kV AlGaN/GaN Schottky Barrier Diode on a Si Substrate by Oxidizing the Schottky Contact

Journal of the Korean Physical Society, 2012-05, p.1629-1633

2012

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Effects of Thermal Annealing Treatment on the Optical and the Electrical Properties of GaN Films Grown on Si Substrates

Journal of the Korean Physical Society, 2012-05, p.1809-1813

2012

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Improved Dc Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au Electrode Schemes

Journal of the Korean Physical Society, 2010-04, p.1287-1290

2010

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1-kV AlGaN/GaN schottky barrier diode on a Si substrate by oxidizing the Schottky contact

Journal of the Korean Physical Society, 2012, 60(10), , pp.1629-1633

2012

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Suppression of Leakage Currents in AlGaN/GaN HEMTs by Optimizing the Thermal Ramping Rate during the Ohmic RTP Process

Journal of the Korean Physical Society, 2011-08, p.439-442

2011

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Effects of thermal annealing treatment on the optical and the electrical properties of GaN films grown on Si substrates

Journal of the Korean Physical Society, 2012, 60(10), , pp.1809-1813

2012

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Suppression of Leakage Currents in AlGaN/GaN HEMTs by Optimizing the Thermal Ramping Rate during the Ohmic RTP Process

Journal of the Korean Physical Society, 2011, 59(21), , pp.439-442

2011

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Improved dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes

Journal of the Korean Physical Society, 2010, 56(4), , pp.1287-1290

2010

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Reduction of Buffer Leakage in AlGaN/GaN HEMTs with an AlGaN Current-Blocking Barrier by using a Two-Dimensional Simulation

Journal of the Korean Physical Society, 2008-11, p.2572-2577

2008

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Dark Current Analysis in InAs Quantum-dot APDs with Different Mesa Structures

Journal of the Korean Physical Society, 2009-09, p.1215-1218

2009

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Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition

Journal of the Korean Physical Society, 2010-04, p.1172-1175

2010

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Dark Current Analysis in InAs Quantum-dot APDs with Different Mesa Structures

Journal of the Korean Physical Society, 2009, 55(3), , pp.1215-1218

2009

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Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition

Journal of the Korean Physical Society, 2010, 56(4), , pp.1172-1175

2010

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Reduction of Buffer Leakage in AlGaN/GaN HEMTs with an AlGaN Current-Blocking Barrier by using a Two-Dimensional Simulation

Journal of the Korean Physical Society, 2008, 53(5), , pp.2572-2577

2008

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GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications

Journal of Electromagnetic Engineering and Science, 2011, 11(1), , pp.16-26

2011

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Correlation between pit formation and phase separation in thick InGaN film on a Si substrate

Phase separation suppression in InxGa1xN on a Si substrate using an indium modulation technique

Phase separation suppression in InxGa1xN on a Si substrate using an indium modulation technique

Correlation between pit formation and phase separation in thick InGaN film on a Si substrate

Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

1-kV AlGaN/GaN Schottky Barrier Diode on a Si Substrate by Oxidizing the Schottky Contact

Effects of Thermal Annealing Treatment on the Optical and the Electrical Properties of GaN Films Grown on Si Substrates

Improved Dc Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au Electrode Schemes

1-kV AlGaN/GaN schottky barrier diode on a Si substrate by oxidizing the Schottky contact

Suppression of Leakage Currents in AlGaN/GaN HEMTs by Optimizing the Thermal Ramping Rate during the Ohmic RTP Process

Effects of thermal annealing treatment on the optical and the electrical properties of GaN films grown on Si substrates

Suppression of Leakage Currents in AlGaN/GaN HEMTs by Optimizing the Thermal Ramping Rate during the Ohmic RTP Process

Improved dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes

Reduction of Buffer Leakage in AlGaN/GaN HEMTs with an AlGaN Current-Blocking Barrier by using a Two-Dimensional Simulation

Dark Current Analysis in InAs Quantum-dot APDs with Different Mesa Structures

Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition

Dark Current Analysis in InAs Quantum-dot APDs with Different Mesa Structures

Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition

Reduction of Buffer Leakage in AlGaN/GaN HEMTs with an AlGaN Current-Blocking Barrier by using a Two-Dimensional Simulation

GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications

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