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介孔炭材料应用于电化学催化的研究进展

新型炭材料, 2022-02, Vol.37 (1), p.152-179

2022

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340 GHz固定调谐分谐波混频器

Infrared and Laser Engineering, 2022, Vol.51 (12), p.20220168

2022

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A high performance InAIN/GaN HEMT with low Ron and gate leakage

半导体学报：英文版, 2016 (2), p.94-96

马春雷顾国栋吕元杰

2016

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190-GHz Balanced Frequency Doubler with High Output Power

Zhōngguó jīguāng, 2019, Vol.46 (6), p.614022

2019

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Excellent-Performance A1GaN/GaN Fin-MOSHEMTs with Self-Aligned A1203 Gate Dielectric

中国物理快报：英文版, 2016 (9), p.124-127

谭鑫周幸叶郭红雨顾国栋王元刚宋旭波尹甲运吕元杰冯志红

2016

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Transient simulation and analysis of current collapse due to trapping effects in AIGaN/GaN high-electron-mobility transistor

中国物理B：英文版, 2015 (4), p.530-534

周幸叶冯志红王元刚顾国栋宋旭波蔡树军

2015

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High-Frequency A1GaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

中国物理快报：英文版, 2015 (11), p.166-168

郭红雨吕元杰顾国栋敦少博房玉龙张志荣谭鑫宋旭波周幸叶冯志红

2015

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70-nm-gated InAIN/GaN HEMTs grown on SiC substrate with fT/fmax 〉 160 GHz

半导体学报：英文版, 2016 (2), p.86-89

韩婷婷敦少博吕元杰顾国栋宋旭波王元刚徐鹏冯志红

2016

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Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

Chinese physics letters, 2014-07, Vol.31 (7), p.210-213

刘庆彬蔚翠李佳宋旭波何泽召芦伟立顾国栋王元刚冯志红

2014

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AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Journal of semiconductors, 2016-04, Vol.37 (4), p.69-72

宋旭波吕元杰顾国栋王元刚谭鑫周幸叶敦少博徐鹏尹甲运魏碧华冯志红蔡树军

2016

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Chinese physics B, 2015-08, Vol.24 (8), p.534-538

吕元杰冯志红顾国栋尹甲运房玉龙王元刚谭鑫周幸叶林兆军冀子武蔡树军

2015

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DC and RF characteristics of enhancement-mode InAIN/GaN HEMT with fluorine treatment

半导体学报：英文版, 2014 (4), p.52-55

宋旭波顾国栋敦少博吕元杰韩婷婷王元刚徐鹏冯志红

2014

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Low ohmic contact AIN/GaN HEMTs grown by MOCVD

半导体学报：英文版, 2013 (11), p.42-44

顾国栋敦少博吕元杰韩婷婷徐鹏、尹甲运冯志红

2013

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W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

Journal of semiconductors, 2015-08, Vol.36 (8), p.171-173

徐鹏宋旭波吕元杰王元刚敦少博尹甲运房玉龙顾国栋冯志红蔡树军

2015

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Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode

Chinese physics B, 2013-07, Vol.22 (7), p.426-429

吕元杰冯志红顾国栋敦少博尹甲运韩婷婷盛百城蔡树军刘波林兆军

2013

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Routledge Handbook of Modern Chinese Literature

1st, 2019

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Modification of primary Mg2Si in Mg-5Si alloys with Y2O3

Transactions of Nonferrous Metals Society of China, 2007-11, Vol.17 (A01), p.440-443

郑娜王慧远赵峰顾振华李栋姜启川

2007

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中国食鱼鸟类的几种稀少吸虫类

Ke xue tong bao, 1958-02, Vol.9 (4), p.109-110

顾, 昌栋

1958

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北戴河获得了蓝翅八色鵣

Ke xue tong bao, 1957-10, Vol.8 (19), p.594-594

顧, 昌栋

1957

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Relationship between egg size and manifestation of quantitative characters in Bombyx mori

The Journal of Sericultural Science of Japan, 1986/10/28, Vol.55(5), pp.410-414

1986

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配电网三相换相开关换相策略研究

水电科技, 2020-12, Vol.3 (6), p.101

顾, 栋杰

2020

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송아지 흉선의 本性 및 變性 DNA 의 三次元的構造變移에 미치는 스페르민의 差別的效果

Journal of the Korean Chemical Society, 1984, Vol.28 (1), p.70-73

1984

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Nucleohistone과 DNase 1 과의 相互作用의 Cooperativity 및 이에 미치는 Spermine과 Dansylation 效果

Journal of the Korean Chemical Society, 1985, Vol.29 (3), p.304-310

1985

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RNase A에 對한 RNA의 加水分解反應性에 미치는 Spermine의 抑制效果

Journal of the Korean Chemical Society, 1985, Vol.29 (6), p.646-650

1985

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Spermine에 依한 Ethidium의 Calf Thymus DNA와의 結合 Cooperativity 變化

Journal of the Korean Chemical Society, 1984, Vol.28 (3), p.185-193

1984

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介孔炭材料应用于电化学催化的研究进展

340 GHz固定调谐分谐波混频器

A high performance InAIN/GaN HEMT with low Ron and gate leakage

190-GHz Balanced Frequency Doubler with High Output Power

Excellent-Performance A1GaN/GaN Fin-MOSHEMTs with Self-Aligned A1203 Gate Dielectric

Transient simulation and analysis of current collapse due to trapping effects in AIGaN/GaN high-electron-mobility transistor

High-Frequency A1GaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

70-nm-gated InAIN/GaN HEMTs grown on SiC substrate with fT/fmax 〉 160 GHz

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

DC and RF characteristics of enhancement-mode InAIN/GaN HEMT with fluorine treatment

Low ohmic contact AIN/GaN HEMTs grown by MOCVD

W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode

Routledge Handbook of Modern Chinese Literature

Modification of primary Mg2Si in Mg-5Si alloys with Y2O3

中国食鱼鸟类的几种稀少吸虫类

北戴河获得了蓝翅八色鵣

Relationship between egg size and manifestation of quantitative characters in Bombyx mori

配电网三相换相开关换相策略研究

송아지 흉선의 本性 및 變性 DNA 의 三次元的構造變移에 미치는 스페르민의 差別的效果

Nucleohistone과 DNase 1 과의 相互作用의 Cooperativity 및 이에 미치는 Spermine과 Dansylation 效果

RNase A에 對한 RNA의 加水分解反應性에 미치는 Spermine의 抑制效果

Spermine에 依한 Ethidium의 Calf Thymus DNA와의 結合 Cooperativity 變化

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