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Si 基板上 AlGaN/GaN ヘテロ構造に関する研究

Journal of the Vacuum Society of Japan, 2011, Vol.54(6), pp.381-385

江川, 孝志

2011

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Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition

Journal of crystal growth, 2019-01, Vol.506, p.40-44

2019

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A Comparative Study of InGaN/GaN Multiple‐Quantum‐Well Solar Cells Grown on Sapphire and AlN Template by Metalorganic Chemical Vapor Deposition

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Electrical properties of GaN-based metal-insulator-semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

Semiconductor science and technology, 2014-02, Vol.29 (4)

2014

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Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

Applied physics letters, 2011-07, Vol.99 (3), p.033504-033504-3

2011

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Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.11004

2019

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Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Applied physics letters, 2015-09, Vol.107 (10)

2015

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Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-09, Vol.34 (5)

2016

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Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers

Applied physics letters, 2012-07, Vol.101 (1)

2012

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Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique

Applied physics letters, 2017-01, Vol.110 (1)

2017

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Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Applied physics letters, 2004-01, Vol.84 (4), p.613-615

2004

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Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

Applied physics letters, 2011-06, Vol.98 (25), p.252105-252105-3

2011

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Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells

Materials research express, 2017-08, Vol.4 (8), p.85904

2017

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Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

Applied physics letters, 2012-10, Vol.101 (16)

2012

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Experimental and simulation study on ultraviolet light emission from quaternary InAlGaN quantum wells with localized carriers

Semiconductor science and technology, 2014-06, Vol.29 (7), p.75024

2014

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Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

Journal of applied physics, 2015-12, Vol.118 (23)

2015

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Compositional instability in InAlN/GaN lattice-matched epitaxy

Applied physics letters, 2012-02, Vol.100 (9), p.092101-092101-3

2012

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Pd/InAlN Schottky diode with low reverse current by sulfide treatment

Applied physics letters, 2011-10, Vol.99 (18), p.183504-183504-3

2011

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Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes

Journal of applied physics, 2011-11, Vol.110 (10), p.103523-103523-6

2011

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Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2003-05, Vol.82 (18), p.3110-3112

2003

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High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Applied physics letters, 2002-03, Vol.80 (12), p.2186-2188

2002

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Study on transfer-free graphene synthesis process utilizing spontaneous agglomeration of catalytic Ni and Co metals

Materials research express, 2015-01, Vol.2 (1), p.15602

2015

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Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Applied physics letters, 1997-06, Vol.70 (24), p.3209-3211

1997

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Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

Applied physics letters, 1998-08, Vol.73 (6), p.809-811

1998

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Si 基板上 AlGaN/GaN ヘテロ構造に関する研究

Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition

A Comparative Study of InGaN/GaN Multiple‐Quantum‐Well Solar Cells Grown on Sapphire and AlN Template by Metalorganic Chemical Vapor Deposition

Electrical properties of GaN-based metal-insulator-semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers

Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface

Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells

Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

Experimental and simulation study on ultraviolet light emission from quaternary InAlGaN quantum wells with localized carriers

Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

Compositional instability in InAlN/GaN lattice-matched epitaxy

Pd/InAlN Schottky diode with low reverse current by sulfide treatment

Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes

Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Study on transfer-free graphene synthesis process utilizing spontaneous agglomeration of catalytic Ni and Co metals

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

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