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Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors

IET power electronics, 2015-12, Vol.8 (12), p.2322-2328

2015

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Recent Developments in Landfilling and Biodegradable Waste Management: A Case Study from the Czech Republic

Acta technologica agriculturae, 2024-09, Vol.27 (3), p.142-149

2024

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The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.329-332

2014

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OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.1987-1992

2014

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Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

IEEE electron device letters, 2014-01, Vol.35 (1), p.27-29

2014

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Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

IEEE electron device letters, 2014-03, Vol.35 (3), p.327-329

2014

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The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

2014 IEEE International Electron Devices Meeting, 2014, p.17.1.1-17.1.4

2014

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Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2549-2554

2015

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Modelling 2DEG charges in AlGaN/GaN heterostructures

CAS 2012 (International Semiconductor Conference), 2012, Vol.2, p.363-366

2012

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Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

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Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1197-1202

2017

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Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

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A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1372-1379

2009

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Subthreshold Mobility in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1861-1865

2016

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Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.103-106

2016

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A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

2011 IEEE International Solid-State Circuits Conference, 2011, p.58-60

2011

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The Versatile Use of SiGe for High-Performance Devices

ECS transactions, 2009, Vol.16 (10), p.407-414

2009

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Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.233-236

2009

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Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.25.5.1-25.5.4

2017

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Diminished electron cloud broadening in a silicon drift detector by sawtooth p(+) strips

IEEE transactions on nuclear science, 1999-02, Vol.46 (1), p.53-58

1999

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Smart Power Devices Nanotechnology

Nanoelectronics, 2017, p.163-204

2017

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The Versatile use of SiGe for High-performance Devices

Meeting abstracts (Electrochemical Society), 2008-08, Vol.MA2008-02 (37), p.2424-2424

2008

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Platinum and platinum oxide nanoparticles generated by unipolar spark discharge

Journal of aerosol science, 2020-03, Vol.141, p.105502, Article 105502

2020

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Tomographic Measurements of Temperature Fluctuations in an Air Plasma Cutting Torch

Plasma chemistry and plasma processing, 2017-05, Vol.37 (3), p.689-699

2017

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Suppression of Instabilities in Thermal Plasma Jet by Additional Arc Current Modulation

IEEE transactions on plasma science, 2014-10, Vol.42 (10), p.2720-2721

2014

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Recent Developments in Landfilling and Biodegradable Waste Management: A Case Study from the Czech Republic

The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

Modelling 2DEG charges in AlGaN/GaN heterostructures

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

Subthreshold Mobility in AlGaN/GaN HEMTs

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

The Versatile Use of SiGe for High-Performance Devices

Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology

Diminished electron cloud broadening in a silicon drift detector by sawtooth p(+) strips

Smart Power Devices Nanotechnology

The Versatile use of SiGe for High-performance Devices

Platinum and platinum oxide nanoparticles generated by unipolar spark discharge

Tomographic Measurements of Temperature Fluctuations in an Air Plasma Cutting Torch

Suppression of Instabilities in Thermal Plasma Jet by Additional Arc Current Modulation

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