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Analysis of current-voltage and capacitance―voltage―frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

Thin solid films, 2011-07, Vol.519 (18), p.6004-6009

2011

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Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy

Journal of materials science. Materials in electronics, 2024-02, Vol.35 (6), p.422, Article 422

2024

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The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

The Journal of physics and chemistry of solids, 2020-09, Vol.144, p.109523, Article 109523

2020

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Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature

Journal of materials science. Materials in electronics, 2022-05, Vol.33 (15), p.12210-12223

2022

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Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

Applied physics. A, Materials science & processing, 2016-12, Vol.122 (12), p.1-9, Article 1032

2016

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The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height

Applied physics. A, Materials science & processing, 2020-06, Vol.126 (6), Article 473

2020

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Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes

Indian journal of physics, 2020-12, Vol.94 (12), p.1901-1908

2020

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The response of high barrier Schottky diodes to light illumination

Journal of materials science. Materials in electronics, 2021-02, Vol.32 (4), p.4448-4456

2021

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The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer

Physica scripta, 2020-11, Vol.95 (11), p.115809

2020

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Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

Zeitschrift für physikalische Chemie (Neue Folge), 2020-03, Vol.234 (3), p.505-516

2020

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Temperature effects on the electrical characteristics of Al/PTh-SiO2/p-Si structure

Bulletin of materials science, 2017-12, Vol.40 (7), p.1435-1439

2017

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The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

SILICON, 2019-12, Vol.11 (6), p.2647-2657

2019

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Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

Microelectronic engineering, 2012-10, Vol.98, p.6-11

2012

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The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices

Thin solid films, 2007-06, Vol.515 (18), p.7253-7258

2007

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Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

Synthetic metals, 2009-07, Vol.159 (14), p.1427-1432

2009

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Electrical and optical properties of p-type silicon based on polypyrrole-derivative polymer

Synthetic metals, 2011-05, Vol.161 (9), p.692-697

2011

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Time Dependence of Current–Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure

Zeitschrift für Naturforschung. A, A journal of physical sciences, 2011-09, Vol.66 (8), p.576-580

2011

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Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Bulletin of materials science, 2017-12, Vol.40 (7), p.1435-1439

2017

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Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2017-12, p.1-1

2017

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Simulation to become a better neurosurgeon. An international prospective controlled trial: The Passion study

Brain & spine, 2024-01, Vol.4, p.102829, Article 102829

2024

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Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO 2 nanocomposite interfacial layer

Thin solid films, 2011, Vol.519 (18), p.6004-6009

2011

Volltextzugriff (PDF)

Circulating Levels of Thrombospondin-1 and Thrombospondin-2 in Patients with Temporal Lobe Epilepsy Before and After Surgery

Turkish neurosurgery, 2021-01, Vol.31 (2), p.228-232

2021

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Dynamic thiol-disulphide homeostasis in low-grade gliomas: Preliminary results in serum

Clinical neurology and neurosurgery, 2017-10, Vol.161, p.17-21

2017

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Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

Zeitschrift für Naturforschung. A, A journal of physical sciences, 2008-04, Vol.63 (3), p.199-202

2008

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The Effectiveness of Adjuvant PD-1 Inhibitors in Patients With Surgically Resected Stage III/IV Acral Melanoma

Journal of immunotherapy (1997), 2024-06, Vol.47 (5), p.182

2024

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Analysis of current-voltage and capacitance―voltage―frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy

The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature

Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height

Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes

The response of high barrier Schottky diodes to light illumination

The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer

Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

Temperature effects on the electrical characteristics of Al/PTh-SiO2/p-Si structure

The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices

Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

Electrical and optical properties of p-type silicon based on polypyrrole-derivative polymer

Time Dependence of Current–Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

Simulation to become a better neurosurgeon. An international prospective controlled trial: The Passion study

Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO 2 nanocomposite interfacial layer

Circulating Levels of Thrombospondin-1 and Thrombospondin-2 in Patients with Temporal Lobe Epilepsy Before and After Surgery

Dynamic thiol-disulphide homeostasis in low-grade gliomas: Preliminary results in serum

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

The Effectiveness of Adjuvant PD-1 Inhibitors in Patients With Surgically Resected Stage III/IV Acral Melanoma

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