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Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

Nano letters, 2013-07, Vol.13 (7), p.3237-3242

2013

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Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology

Nanotechnology, 2019-05, Vol.30 (22), p.225502-225502

2019

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Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

Nanoscale, 2015-08, Vol.7 (3), p.1396-1314

2015

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Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors

Microelectronic engineering, 2019-05, Vol.212, p.13-20

2019

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Graphene transfer methods for the fabrication of membrane-based NEMS devices

Microelectronic engineering, 2016-06, Vol.159, p.108-113

2016

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New materials for post-Si computing

MRS bulletin, 2014-08, Vol.39 (8), p.658-662

2014

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Going ballistic: Graphene hot electron transistors

Solid state communications, 2015-12, Vol.224, p.64-75

2015

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Electro-optical effects of high aspect ratio P3HT nanofibers colloid in polymer micro-fluid cells

Optics letters, 2017-06, Vol.42 (11), p.2157

2017

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Growth of GeSnSiC layers for photonic applications

Surface & coatings technology, 2013-09, Vol.230, p.106-110

2013

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Characterization of SiGe/Si multi-quantum wells for infrared sensing

Applied physics letters, 2013-12, Vol.103 (25), p.251609

2013

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Improved designs of Si-based quantum wells and Schottky diodes for IR detection

Thin solid films, 2016-08, Vol.613, p.19-23

2016

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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 669

2017

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4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

Materials science forum, 2019-07, Vol.963, p.837-840

2019

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A Refined Polycide Gate Process with Silicided Diffusions for Submicron MOS Applications

Journal of the Electrochemical Society, 2019-12, Vol.136 (3), p.805-809

2019

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Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

Thin solid films, 2016-08, Vol.613, p.38-42

2016

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Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer

ECS journal of solid state science and technology, 2020-12, Vol.9 (12), p.125009

2020

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Large scale integration of graphene transistors for potential applications in the back end of the line

Solid-state electronics, 2015-06, Vol.108, p.61-66

2015

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Atomic-layer deposited thulium oxide as a passivation layer on germanium

Journal of applied physics, 2015-06, Vol.117 (21)

2015

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Silicon nanowires integrated with CMOS circuits for biosensing application

Solid-state electronics, 2014-08, Vol.98, p.26-31

2014

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Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation

IEEE electron device letters, 2011-05, Vol.32 (5), p.596-598

2011

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Geometrical effects in high current gain 1100-V 4H-SiC BJTs

IEEE electron device letters, 2005-10, Vol.26 (10), p.743-745

2005

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Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane

Journal of the Electrochemical Society, 2012, Vol.159 (5), p.H478-H481

2012

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Influence of dwell time on fatigue crack propagation in Alloy 718 laser welds

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2017-09, Vol.704, p.440-447

2017

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Electric field induced optical anisotropy of P3HT nanofibers in a liquid solution

Optical materials express, 2015, Vol.5 (11), p.2642-2647

2015

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Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1, Article 455

2017

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Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors

Graphene transfer methods for the fabrication of membrane-based NEMS devices

New materials for post-Si computing

Going ballistic: Graphene hot electron transistors

Electro-optical effects of high aspect ratio P3HT nanofibers colloid in polymer micro-fluid cells

Growth of GeSnSiC layers for photonic applications

Characterization of SiGe/Si multi-quantum wells for infrared sensing

Improved designs of Si-based quantum wells and Schottky diodes for IR detection

4H-SiC pseudo-CMOS logic inverters for harsh environment electronics

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

A Refined Polycide Gate Process with Silicided Diffusions for Submicron MOS Applications

Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer

Large scale integration of graphene transistors for potential applications in the back end of the line

Atomic-layer deposited thulium oxide as a passivation layer on germanium

Silicon nanowires integrated with CMOS circuits for biosensing application

Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation

Geometrical effects in high current gain 1100-V 4H-SiC BJTs

Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane

Influence of dwell time on fatigue crack propagation in Alloy 718 laser welds

Electric field induced optical anisotropy of P3HT nanofibers in a liquid solution

Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

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