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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Microelectronic engineering, 2009-07, Vol.86 (7), p.1646-1649

2009

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Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

Applied physics. A, Materials science & processing, 2009-03, Vol.94 (3), p.521-524

2009

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High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack

Microelectronic engineering, 2011-09, Vol.88 (9), p.2955-2958

2011

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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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LaScO3 as a higher-κ dielectric for p-MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1323-1325

2011

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High mobility Si-Ge channels and novel high-k materials for nanomosfets

CAS 2010 Proceedings (International Semiconductor Conference), 2010, Vol.1, p.57-62

2010

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Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Applied physics letters, 2010-01, Vol.96 (1), p.013513-013513-3

2010

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LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Solid-state electronics, 2012-05, Vol.71, p.19-24

2012

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Integration of LaLuO3 (κ ~ 30) as High-κ, Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011, Vol.32 (1), p.15-17

2011

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High mobility strained Si 0.5Ge 0.5/SSOI short channel field effect transistors with TiN/GdScO 3 gate stack

Microelectronic engineering, 2011, Vol.88 (9), p.2955-2958

2011

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Isotopic labeling study of oxygen diffusion in amorphous LaSc03 high-κ films on Si(100) and its effects on the electrical characteristics

Applied physics. A, Materials science & processing, 2009, Vol.96 (2), p.447-451

2009

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Behavior of charges locally injected into nanothin high-k SmScO3 dielectric

Technical physics, 2014-10, Vol.59 (10), p.1540-1544

2014

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Behavior of charges locally injected into nanothin high-k SmSc[O.sub.3] dielectric

Technical physics, 2014-10, Vol.59 (10), p.1540

2014

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Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics

Applied physics. A, Materials science & processing, 2009-08, Vol.96 (2), p.447-451

2009

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Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate

Technical physics letters, 2013-05, Vol.39 (5), p.427-430

2013

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Integration of \hbox \ (\kappa \sim \hbox) as High- \kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011-01, Vol.32 (1), p.15-17

2011

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Integration of hbox LaLuO 3 Unknown character ( Kappa similar to hbox 30 ) as High- Kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011-01, Vol.32 (1), p.15-17

2011

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Integration of [Formula Omitted] as High-[Formula Omitted] Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011-01, Vol.32 (1), p.15

2011

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Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

ECS transactions, 2011, Vol.35 (4), p.461-479

2011

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LaScO 3 as a higher- κ dielectric for p-MOSFETs

Microelectronic engineering, 2011, Vol.88 (7), p.1323-1325

2011

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SmScO 3 thin films as an alternative gate dielectric

Applied physics letters, 2008-08, Vol.93 (5), p.052902-052902-3

2008

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Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics

Applied physics. A, Materials science & processing, 2009-08, Vol.96 (2), p.447-451

2009

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Rare-earth based alternative gate dielectrics for future integration in MOSFETs

2009 10th International Conference on Ultimate Integration of Silicon, 2009, p.99-102

2009

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MOSFETs with high mobility channel materials and higher-k/metal gate stack

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.875-878

2010

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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

LaScO3 as a higher-κ dielectric for p-MOSFETs

High mobility Si-Ge channels and novel high-k materials for nanomosfets

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Integration of LaLuO3 (κ ~ 30) as High-κ, Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

High mobility strained Si 0.5Ge 0.5/SSOI short channel field effect transistors with TiN/GdScO 3 gate stack

Isotopic labeling study of oxygen diffusion in amorphous LaSc03 high-κ films on Si(100) and its effects on the electrical characteristics

Behavior of charges locally injected into nanothin high-k SmScO3 dielectric

Behavior of charges locally injected into nanothin high-k SmSc[O.sub.3] dielectric

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics

Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate

Integration of \hbox \ (\kappa \sim \hbox) as High- \kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

Integration of hbox LaLuO 3 Unknown character ( Kappa similar to hbox 30 ) as High- Kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

Integration of [Formula Omitted] as High-[Formula Omitted] Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

LaScO 3 as a higher- κ dielectric for p-MOSFETs

SmScO 3 thin films as an alternative gate dielectric

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics

Rare-earth based alternative gate dielectrics for future integration in MOSFETs

MOSFETs with high mobility channel materials and higher-k/metal gate stack

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