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Phonon black-body radiation limit for heat dissipation in electronics

Nature materials, 2015-02, Vol.14 (2), p.187-192

2015

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study

Applied physics letters, 2011-08, Vol.99 (6), p.062109-062109-3

2011

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Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115032

2014

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Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

Nanotechnology, 2023-08, Vol.34 (32), p.325201

2023

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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Journal of applied physics, 2024-01, Vol.135 (1)

2024

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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

Semiconductor science and technology, 2020-11, Vol.35 (11)

2020

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Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

Journal of Physics: Conference Series, 2015-10, Vol.647 (1), p.12039

2015

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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Applied physics letters, 2014-02, Vol.104 (7)

2014

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GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95016

2018

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Study of surface charges in ballistic deflection transistors

Nanotechnology, 2015-12, Vol.26 (48), p.485202-485202

2015

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Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations

Journal of physics. Conference series, 2015-05, Vol.609 (1), p.12005

2015

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Monte Carlo analysis of noise spectra in self-switching nanodiodes

Journal of applied physics, 2008-01, Vol.103 (2), p.024502-024502-6

2008

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Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

Journal of applied physics, 2009-05, Vol.105 (9), p.094504-094504-7

2009

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Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

Journal of applied physics, 2024-01, Vol.135 (4)

2024

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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Low temperature memory effects in AlGaN/GaN nanochannels

Applied physics letters, 2023-09, Vol.123 (10)

2023

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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3447-3453

2023

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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12068

2015

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Phonon black-body radiation limit for heat dissipation in electronics

Searching for THz Gunn oscillations in GaN planar nanodiodes

Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study

Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Study of surface charges in ballistic deflection transistors

Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations

Monte Carlo analysis of noise spectra in self-switching nanodiodes

Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Low temperature memory effects in AlGaN/GaN nanochannels

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

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