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A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020-06, Vol.68 (6), p.4450-4458

2020

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A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.956-961

2022

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IEEE_Xplore

A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

IEEE transactions on microwave theory and techniques, 2019-01, Vol.67 (1), p.318-331

2019

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IEEE_Xplore

Reclaim Autonomy: Selbstermächtigung in der digitalen Weltordnung

Augstein, Jakob

1, 2017

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A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

IEEE electron device letters, 2024-04, Vol.45 (4), p.558-561

2024

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IEEE_Xplore

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

IEEE transactions on microwave theory and techniques, 2021-06, Vol.69 (6), p.2795-2808

2021

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IEEE_Xplore

High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.659-673

2017

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IEEE_Xplore

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

IEEE transactions on circuits and systems. I, Regular papers, 2017-04, Vol.64 (4), p.847-857

2017

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IEEE_Xplore

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

IEEE electron device letters, 2024-01, Vol.45 (1), p.1-1

2024

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IEEE_Xplore

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2614-2620

2020

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IEEE_Xplore

A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1411-1421

2020

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IEEE_Xplore

Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3930-3935

2021

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IEEE_Xplore

Semiconductor Devices for Space Use and Radiation Hardening Technique

The Journal of The Institute of Electrical Engineers of Japan, 2009/11/01, Vol.129(11), pp.739-742

2009

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Body Neutrality: Finding Acceptance and Liberation in a Body-Focused Culture

Clark, Eleanor

1, 2023

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Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages

Solid-state electronics, 2023-11, Vol.209, p.108735, Article 108735

2023

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A 20-42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7-4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

IEEE transactions on microwave theory and techniques, 2021-11, Vol.69 (11), p.4951-4960

2021

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IEEE_Xplore

High-responsivity graphene/silicon-heterostructure waveguide photodetectors

Nature photonics, 2013-11, Vol.7 (11), p.888-891

2013

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High-efficiency single etch step apodized surface grating coupler using subwavelength structure

Laser & photonics reviews, 2014-11, Vol.8 (6), p.L93-L97

2014

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Planar Junctionless Silicon-on-Insulator Transistor With Buried Metal Layer

IEEE electron device letters, 2018-06, Vol.39 (6), p.799-802

2018

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IEEE_Xplore

A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving

IEEE journal of solid-state circuits, 2022-01, Vol.57 (5), p.1432

2022

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A Compact Low-Power 28-nm FD-SOI CMOS 76-81 GHz Dual-Path Receiver With Phase Control for Automotive Applications

IEEE transactions on microwave theory and techniques, 2024-07, Vol.72 (7), p.1-0

2024

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IEEE_Xplore

Cavity-BOX SOI: Advanced Silicon Substrate with Pre-Patterned BOX for Monolithic MEMS Fabrication

Micromachines (Basel), 2021-04, Vol.12 (4), p.414

2021

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Symmetric BSIM-SOI-Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2284-2292

2024

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IEEE_Xplore

Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3525-3531

2024

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IEEE_Xplore

RF Performance of SOI CMOS Technology on Commercial 200-mm Enhanced Signal Integrity High Resistivity SOI Substrate

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.722-728

2014

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IEEE_Xplore

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A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

Reclaim Autonomy: Selbstermächtigung in der digitalen Weltordnung

A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

Semiconductor Devices for Space Use and Radiation Hardening Technique

Body Neutrality: Finding Acceptance and Liberation in a Body-Focused Culture

Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages

A 20-42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7-4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

High-responsivity graphene/silicon-heterostructure waveguide photodetectors

High-efficiency single etch step apodized surface grating coupler using subwavelength structure

Planar Junctionless Silicon-on-Insulator Transistor With Buried Metal Layer

A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving

A Compact Low-Power 28-nm FD-SOI CMOS 76-81 GHz Dual-Path Receiver With Phase Control for Automotive Applications

Cavity-BOX SOI: Advanced Silicon Substrate with Pre-Patterned BOX for Monolithic MEMS Fabrication

Symmetric BSIM-SOI-Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature

RF Performance of SOI CMOS Technology on Commercial 200-mm Enhanced Signal Integrity High Resistivity SOI Substrate

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