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High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Advanced functional materials, 2021-05, Vol.31 (21), p.n/a

2021

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Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-1

2020

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Trapping Effects in Si \delta -Doped \beta -Ga2O3 MESFETs on an Fe-Doped \beta -Ga2O3 Substrate

IEEE electron device letters, 2018-07, Vol.39 (7), p.1042-1045

2018

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High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers

IEEE electron device letters, 2022-03, Vol.43 (3), p.350-353

2022

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A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

IEEE electron device letters, 2022-08, Vol.43 (8), p.1271-1274

2022

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Electrothermal Characteristics of Delta-Doped \beta -Ga2O3 Metal-Semiconductor Field-Effect Transistors

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5360-5366

2019

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Nanofabrication of normally-off GaN vertical nanowire MESFETs

Nanotechnology, 2019-07, Vol.30 (28), p.285304-285304

2019

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14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs

IEEE electron device letters, 2016-12, Vol.37 (12), p.1597-1600

2016

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High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2

IEEE electron device letters, 2022-10, Vol.43 (10), p.1637-1640

2022

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2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors

Materials & design, 2023-07, Vol.231, p.112035, Article 112035

2023

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Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density

IEEE electron device letters, 2023-12, Vol.44 (12), p.1939-1942

2023

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Scaling SOI MESFETs to 150-nm CMOS Technologies

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1628-1634

2011

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Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates

Applied physics express, 2023-06, Vol.16 (6), p.64005

2023

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Correct Equations for Minimum Noise Measure of a Microwave Transistor Amplifier

IEEE transactions on microwave theory and techniques, 2022-02, Vol.70 (2), p.1361-1366

2022

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Artificial bee colony algorithm for small signal model parameter extraction of MESFET

Engineering applications of artificial intelligence, 2010-08, Vol.23 (5), p.689-694

2010

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Metal-Semiconductor Field-Effect Transistors With In-Ga-Zn-O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition

IEEE electron device letters, 2015-05, Vol.36 (5), p.463-465

2015

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Design of high gain MMIC amplifier for LEO satellite communication systems

Maǧallaẗ al-abḥath al-handasiyyaẗ, 2024-06

Bacha, Mansour

2024

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Mechanism of Nonuniform Damage Induced by Low-Energy Protons in GaAs MESFETs

IEEE transactions on nuclear science, 2023-12, Vol.70 (12), p.2590-2596

2023

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Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

Nano letters, 2018-03, Vol.18 (3), p.1937-1945

2018

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DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-10, Vol.272, p.115386, Article 115386

2021

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Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

Advanced materials (Weinheim), 2010-12, Vol.22 (47), p.5332-5349

2010

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Adaptive Power Control Using Current Adjustment for Watt-Level Power Amplifiers in CMOS SOI

IEEE transactions on circuits and systems. II, Express briefs, 2020-04, Vol.67 (4), p.605-609

2020

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The R}-V} Relationship in \beta-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation

2023 Device Research Conference (DRC), 2023, p.1-2

2023

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Comparison of ZnO-Based JFET, MESFET, and MISFET

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1828-1833

2013

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Assessment of intrinsic small signal parameters of submicron SiC MESFETs

Solid-state electronics, 2018-01, Vol.139, p.80-87

2018

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High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

Trapping Effects in Si \delta -Doped \beta -Ga2O3 MESFETs on an Fe-Doped \beta -Ga2O3 Substrate

High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers

A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

Electrothermal Characteristics of Delta-Doped \beta -Ga2O3 Metal-Semiconductor Field-Effect Transistors

Nanofabrication of normally-off GaN vertical nanowire MESFETs

14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs

High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2

2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors

Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density

Scaling SOI MESFETs to 150-nm CMOS Technologies

Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates

Correct Equations for Minimum Noise Measure of a Microwave Transistor Amplifier

Artificial bee colony algorithm for small signal model parameter extraction of MESFET

Metal-Semiconductor Field-Effect Transistors With In-Ga-Zn-O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition

Design of high gain MMIC amplifier for LEO satellite communication systems

Mechanism of Nonuniform Damage Induced by Low-Energy Protons in GaAs MESFETs

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells

Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

Adaptive Power Control Using Current Adjustment for Watt-Level Power Amplifiers in CMOS SOI

The R}-V} Relationship in \beta-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation

Comparison of ZnO-Based JFET, MESFET, and MISFET

Assessment of intrinsic small signal parameters of submicron SiC MESFETs

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