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An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector

Chinese physics letters, 2012-03, Vol.29 (3), p.38104-1-038104-4

2012

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Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film

Chinese physics letters, 2010-03, Vol.27 (3), p.316-319

刘燕宋志棠凌云封松林

2010

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Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling

Japanese Journal of Applied Physics, 2009-06, Vol.48 (6R), p.64505

2009

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Germanium Nitride as a Buffer Layer for Phase Change Memory

Chinese physics letters, 2012, Vol.29 (10), p.107201-1-107201-3

2012

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RESET current optimization for phase change memory based on the sub-threshold slope

Materials science in semiconductor processing, 2019-07, Vol.97, p.11-16

2019

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An SPICE Model for PCM Based on Arrhenius Equation

Chinese physics letters, 2009-12, Vol.26 (12), p.243-246

李喜宋志棠蔡道林陈小刚贾晓玲

2009

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Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3: Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3

Wu ji cai liao xue bao, 2013-12, Vol.28 (12), p.1364-1368

2013

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Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory

Chinese physics letters, 2010-02, Vol.27 (2), p.295-298

吕士龙宋志棠刘燕封松林

2010

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Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

Chinese physics B, 2012-11, Vol.21 (11), p.335-339

任万春刘波宋志棠向阳辉王宗涛张北超封松林

2012

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Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

Chinese physics letters, 2009-11, Vol.26 (11), p.118101-118101

2009

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Microstructure evolution and crystallography of the phase-change material TiSbTe films annealed in situ

Journal of alloys and compounds, 2016-09, Vol.678, p.185-192

2016

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Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

Chinese physics B, 2011-03, Vol.20 (3), p.038102

2011

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Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate

Chinese physics letters, 2009-11, Vol.26 (11), p.116802-116802

2009

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Endurance Improvement of Phase Change Memory Based on High and Narrow RESET Currents

ECS journal of solid state science and technology, 2020-02, Vol.9 (3), p.35004

2020

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Power-Efficient Phase Change Memory Using Silicon Carbide as a Buffer Layer

Materials science forum, 2017-06, Vol.898, p.1812-1816

2017

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Scaling properties of phase-change line memory

Chinese physics B, 2012-09, Vol.21 (9), p.554-558

杜小锋宋三年宋志棠刘卫丽吕士龙顾怡峰薛维佳席韡

2012

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Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application

Chinese physics letters, 2010-10, Vol.27 (10), p.206-209

任堃饶峰宋志棠吴良才周夕淋夏梦娇刘波封松林席韡姚栋宁陈邦明

2010

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Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming

Chinese physics letters, 2010-10, Vol.27 (10), p.186-189

陈一峰宋志棠陈小刚刘波徐成冯高明王良咏钟曼封松林

2010

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Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

Chinese physics letters, 2008-02, Vol.25 (2), p.762-764

2008

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Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling

Chinese physics letters, 2016-09, Vol.33 (9), p.128-131

金秋雪刘波刘燕王维维汪恒许震高丹王青夏洋洋宋志棠封松林

2016

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Cation Effect on Copper Chemical Mechanical Polishing

Chinese physics letters, 2009-02, Vol.26 (2), p.028103

2009

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The Influence of the Bitline Length on the Resistance Consistency in Phase Change Memory Array

ECS journal of solid state science and technology, 2018, Vol.7 (3), p.Q33-Q37

2018

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High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100 nm

Chinese physics letters, 2008-11, Vol.25 (11), p.4174-4176

2008

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Surface Modified Alumina Particles and Their Chemical Mechanical Polishing (CMP) Behavior on C-plane (0001) Sapphire Substrate

Wu ji cai liao xue bao, 2017-10, Vol.32 (10), p.1109

2017

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Surface Modified Alumina Particles and Their Chemical Mechanical Polishing(CMP) Behavior on C-plane(0001) Sapphire Substrate

Wu ji cai liao xue bao, 2017-01 (10), p.1109

2017

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An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector

Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film

Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling

Germanium Nitride as a Buffer Layer for Phase Change Memory

RESET current optimization for phase change memory based on the sub-threshold slope

An SPICE Model for PCM Based on Arrhenius Equation

Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3: Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3

Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory

Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

Microstructure evolution and crystallography of the phase-change material TiSbTe films annealed in situ

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate

Endurance Improvement of Phase Change Memory Based on High and Narrow RESET Currents

Power-Efficient Phase Change Memory Using Silicon Carbide as a Buffer Layer

Scaling properties of phase-change line memory

Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application

Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming

Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling

Cation Effect on Copper Chemical Mechanical Polishing

The Influence of the Bitline Length on the Resistance Consistency in Phase Change Memory Array

High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100 nm

Surface Modified Alumina Particles and Their Chemical Mechanical Polishing (CMP) Behavior on C-plane (0001) Sapphire Substrate

Surface Modified Alumina Particles and Their Chemical Mechanical Polishing(CMP) Behavior on C-plane(0001) Sapphire Substrate

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