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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1843-1845

2018

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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Journal of crystal growth, 2018-12, Vol.504, p.1-6

2018

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The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Technical physics letters, 2020-12, Vol.46 (12), p.1211-1214

2020

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Proton irradiation effects on GaN-based epitaxial structures

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12073

2020

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Raman spectra of interface phonons in long-period AlN/GaN superlattices as a tool for determination of the structure period

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66003

2019

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A fabrication of AlGaN / AlN / GaN HEMT without annealing of ohmic contacts

Journal of physics. Conference series, 2019-10, Vol.1326 (1), p.12002

2019

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2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12022

2020

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Two-dimensional plasmons in a GaN/AlGaN heterojunction

Journal of physics. Conference series, 2019-03, Vol.1199 (1), p.12014

2019

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InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications

IOP conference series. Materials Science and Engineering, 2021-01, Vol.1019 (1), p.12071

2021

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Insulating GaN Epilayers Co-Doped with Iron and Carbon

Technical physics letters, 2019-07, Vol.45 (7), p.723-726

2019

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Hydrogen effects in III-nitride MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.4862-4866

2008

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Lattice dynamics of short-period AlN/GaN superlattices: Theory and experiment

Physica status solidi. A, Applications and materials science, 2013-03, Vol.210 (3), p.484-487

2013

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Resonant Bragg structures with GaN/AlGaN Quantum Wells

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12119

2018

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Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1431-1434

2016

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Optical properties of GaN/AlGaN nanostructures in the terahertz frequency range

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12019

2017

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Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1574-1578

2016

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1241-1247

2016

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The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas

Technical physics letters, 2018-07, Vol.44 (7), p.577-580

2018

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InAlN AlN GaN heterostructures for high electron mobility transistors

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12164

2016

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Fast AlGaN growth in a whole composition range in planetary reactor

Journal of crystal growth, 2013-05, Vol.370, p.7-11

2013

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Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

Semiconductor science and technology, 2021-12, Vol.36 (12), p.125007

2021

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effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1383-1389

2016

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High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13285-13290

2002

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Journal of crystal growth, 2011-01, Vol.315 (1), p.267-271

2011

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Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

Journal of crystal growth, 2004-12, Vol.272 (1), p.420-425

2004

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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Proton irradiation effects on GaN-based epitaxial structures

Raman spectra of interface phonons in long-period AlN/GaN superlattices as a tool for determination of the structure period

A fabrication of AlGaN / AlN / GaN HEMT without annealing of ohmic contacts

2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

Two-dimensional plasmons in a GaN/AlGaN heterojunction

InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications

Insulating GaN Epilayers Co-Doped with Iron and Carbon

Hydrogen effects in III-nitride MOVPE

Lattice dynamics of short-period AlN/GaN superlattices: Theory and experiment

Resonant Bragg structures with GaN/AlGaN Quantum Wells

Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

Optical properties of GaN/AlGaN nanostructures in the terahertz frequency range

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas

InAlN AlN GaN heterostructures for high electron mobility transistors

Fast AlGaN growth in a whole composition range in planetary reactor

Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

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