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N-Doped Mesoporous Carbon from Melamine-Modified Resorcinol-Formaldehyde Polymer Resin as Catalytic Support for Electrochemical Investigation of Formic acid Oxidation Reaction

Journal of inorganic and organometallic polymers and materials, 2024, Vol.34 (5), p.1977-1987

2024

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Phosphors for LED-based light sources: Thermal properties and reliability issues

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2164-2167

2012

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Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.P17.GaN-1-P17.GaN-4

2024

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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.4B.5-1-4B.5-4

2018

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Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation

IEEE electron device letters, 2009-10, Vol.30 (10), p.1021-1023

2009

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Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Applied physics letters, 2011-08, Vol.99 (9), p.093506-093506-3

2011

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Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

Electronics letters, 2009, Vol.45 (8), p.426-427

2009

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Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-5

2024

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mathrm} and \mathrm} Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-4

2024

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On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.37-40

2015

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Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

IEEE electron device letters, 2009-05, Vol.30 (5), p.427-429

2009

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Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

Microelectronic engineering, 2013-09, Vol.109, p.257-261

2013

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2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1303-1307

2018

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Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.73-77

2017

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Flash memory cells-an overview

Proceedings of the IEEE, 1997-08, Vol.85 (8), p.1248-1271

1997

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Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-08, Vol.97 (6), p.063508-063508-3

2010

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On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-5

2024

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Traps localization and analysis in GaN HEMTs

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2222-2226

2014

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Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

Applied physics letters, 2010-12, Vol.97 (26), p.263501-263501-3

2010

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Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

Microelectronics and reliability, 2017-09, Vol.76-77, p.575-578

2017

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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.11B.4-1-11B.4-6

2022

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Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (26), p.263512-263512-3

2010

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Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2147-2150

2014

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N-Doped Mesoporous Carbon from Melamine-Modified Resorcinol-Formaldehyde Polymer Resin as Catalytic Support for Electrochemical Investigation of Formic acid Oxidation Reaction

Phosphors for LED-based light sources: Thermal properties and reliability issues

Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements

mathrm} and \mathrm} Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal

Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

Flash memory cells-an overview

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach

Traps localization and analysis in GaN HEMTs

Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

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