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Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry

Surface & coatings technology, 2003-07, Vol.171 (1-3), p.267-272

2003

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Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.60-63

2002

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Effects of oxygen radical on the properties of indium tin oxide thin films deposited at room temperature by oxygen ion beam assisted evaporation

Thin solid films, 2000-12, Vol.377, p.103-108

2000

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High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1-3), p.50-52

2001

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A study on the etch characteristics of ITO thin film using inductively coupled plasmas

Surface & coatings technology, 2000-09, Vol.131 (1), p.247-251

2000

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A study of lead zirconate titanate etching characteristics using magnetized inductively coupled plasmas

Surface & coatings technology, 2000-09, Vol.131 (1), p.257-260

2000

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Effects of plasma conditions on the etch properties of AlGaN

Vacuum, 2000, Vol.56 (1), p.45-49

2000

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Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III–V MOS devices

Microelectronic engineering, 2014-02, Vol.114, p.121-125

2014

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Effects of oxygen ion beam plasma conditions on the properties of Indium tin oxide thin films

Vacuum, 2000, Vol.56 (1), p.77-81

2000

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A study of GaN etching characteristics using HBr-based inductively coupled plasmas

Solid-state electronics, 2003-03, Vol.47 (3), p.549-552

2003

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Effect of O2(CO2)/C4F8O gas combinations on global warming gas emission in silicon nitride PECVD plasma cleaning

Surface & coatings technology, 2001-09, Vol.146-147, p.522-527

2001

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Dry etch characteristics of Al-Nd films for TFT-LCD

Surface & coatings technology, 2000-11, Vol.133, p.606-611

2000

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Characteristics of SiO x thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O 2 flow rate

Thin solid films, 2010, Vol.518 (22), p.6403-6407

2010

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Thermal stability of AgXCu1−X alloys and Pt capping layers for GaN vertical light emitting diodes

Thin solid films, 2012-10, Vol.521, p.54-59

2012

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Atmospheric pressure PECVD of SiO 2 thin film at a low temperature using HMDS/O 2/He/Ar

Thin solid films, 2009, Vol.517 (14), p.4065-4069

2009

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Effect of additive gases on the selective etching of ZrO x film using inductively coupled BCl3-based plasmas

Thin solid films, 2007, Vol.515 (12), p.5045-5048

2007

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Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl2/N2 and Cl2/HBr plasmas

Thin solid films, 1999-03, Vol.341 (1-2), p.168-171

1999

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

Solid-state electronics, 2013-04, Vol.82, p.82-85

2013

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Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications

Materials science in semiconductor processing, 2002-08, Vol.5 (4), p.419-423

2002

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Linear inductive antenna design for large area flat panel display plasma processing

Microelectronic engineering, 2012, Vol.89, p.133-137

2012

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate

Solid-state electronics, 2013-08, Vol.86, p.75-78

2013

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Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5617-5620

2008

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Residual stress on nanocrystalline silicon thin films deposited under energetic ion bombardment by using internal ICP-CVD

Thin solid films, 2009-05, Vol.517 (14), p.4100-4103

2009

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Selective plasma etching of ZrO{sub x} to Si using inductively coupled BCl{sub 3}/C{sub 4}F{sub 8} plasmas

Applied physics letters, 2006-02, Vol.88 (9)

2006

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Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO

Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5646-5649

2008

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Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry

Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas

Effects of oxygen radical on the properties of indium tin oxide thin films deposited at room temperature by oxygen ion beam assisted evaporation

High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

A study on the etch characteristics of ITO thin film using inductively coupled plasmas

A study of lead zirconate titanate etching characteristics using magnetized inductively coupled plasmas

Effects of plasma conditions on the etch properties of AlGaN

Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III–V MOS devices

Effects of oxygen ion beam plasma conditions on the properties of Indium tin oxide thin films

A study of GaN etching characteristics using HBr-based inductively coupled plasmas

Effect of O2(CO2)/C4F8O gas combinations on global warming gas emission in silicon nitride PECVD plasma cleaning

Dry etch characteristics of Al-Nd films for TFT-LCD

Characteristics of SiO x thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O 2 flow rate

Thermal stability of AgXCu1−X alloys and Pt capping layers for GaN vertical light emitting diodes

Atmospheric pressure PECVD of SiO 2 thin film at a low temperature using HMDS/O 2/He/Ar

Effect of additive gases on the selective etching of ZrO x film using inductively coupled BCl3-based plasmas

Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl2/N2 and Cl2/HBr plasmas

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications

Linear inductive antenna design for large area flat panel display plasma processing

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate

Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

Residual stress on nanocrystalline silicon thin films deposited under energetic ion bombardment by using internal ICP-CVD

Selective plasma etching of ZrO{sub x} to Si using inductively coupled BCl{sub 3}/C{sub 4}F{sub 8} plasmas

Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO

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