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Thermal stability of germanium-tin (GeSn) fins

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

Journal of applied physics, 2002-12, Vol.92 (12), p.7266-7271

2002

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Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Applied physics letters, 2007-06, Vol.90 (26), p.263507-263507-3

2007

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Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC-DC Converters

IEEE journal of emerging and selected topics in power electronics, 2020-12, Vol.8 (4), p.4270-4278

2020

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Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys

Journal of applied physics, 2014-08, Vol.116 (5)

2014

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Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

Journal of applied physics, 2013-07, Vol.114 (4)

2013

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Post-growth annealing of germanium-tin alloys using pulsed excimer laser

Journal of applied physics, 2015-07, Vol.118 (2)

2015

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Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials

Journal of applied physics, 2015-05, Vol.117 (20)

2015

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Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Journal of applied physics, 2015-02, Vol.117 (7)

2015

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Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.1039-1046

2014

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Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.58-65

2017

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n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport

IEEE transactions on electron devices, 2007-02, Vol.54 (2), p.249-256

2007

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Controlled insulator-to-metal transformation in printable polymer composites with nanometal clusters

Nature materials, 2007-02, Vol.6 (2), p.149-155

2007

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Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1027-1033

2016

Volltextzugriff (PDF)

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials

Scientific reports, 2012-04, Vol.2 (1), p.360-360, Article 360

2012

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Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Journal of applied physics, 2015-06, Vol.117 (22)

2015

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A Variational Approach to the Two-Dimensional Nonlinear Poisson's Equation for the Modeling of Tunneling Transistors

IEEE electron device letters, 2008-11, Vol.29 (11), p.1252-1255

2008

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Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

IEEE electron device letters, 2009-09, Vol.30 (9), p.981-983

2009

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Germanium n-Channel Planar FET and FinFET: Gate-Stack and Contact Optimization

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3567-3574

2015

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Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge Contacts

IEEE electron device letters, 2012-06, Vol.33 (6), p.773-775

2012

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Phase-Change Random Access Memory With Multilevel Resistances Implemented Using a Dual Phase-Change Material Stack

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2910-2916

2012

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Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.353-360

2017

Volltextzugriff (PDF)

MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations

IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.1027-1035

2003

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Analysis of the Effects of Fringing Electric Field on FinFET Device Performance and Structural Optimization Using 3-D Simulation

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1177-1184

2008

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Thermal stability of germanium-tin (GeSn) fins

Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy

Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC-DC Converters

Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys

Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

Post-growth annealing of germanium-tin alloys using pulsed excimer laser

Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials

Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential

n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport

Controlled insulator-to-metal transformation in printable polymer composites with nanometal clusters

Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

A Variational Approach to the Two-Dimensional Nonlinear Poisson's Equation for the Modeling of Tunneling Transistors

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

Germanium n-Channel Planar FET and FinFET: Gate-Stack and Contact Optimization

Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge Contacts

Phase-Change Random Access Memory With Multilevel Resistances Implemented Using a Dual Phase-Change Material Stack

Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations

Analysis of the Effects of Fringing Electric Field on FinFET Device Performance and Structural Optimization Using 3-D Simulation

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