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Effect of Built-in Electric Field on Miniband Structure and Carrier Nonradiative Recombination in InGaAs/GaAsP Superlattice Investigated Using Photoreflectance and Photoluminescence Spectroscopy

Energy procedia, 2016, Vol.102, p.121-125

2016

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Editorial for the Proceedings of the 2016 E-MRS Spring Meeting Symposium T - Advanced Materials and Characterization Techniques for Solar Cells III

Energy procedia, 2016-12, Vol.102, p.1-2

2016

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Thin Film Polycrystalline Silicon Solar Cells Studied by Transient Terahertz Probe Spectroscopy

Energy procedia, 2016, Vol.102, p.19-26

2016

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Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses

AIP conference proceedings, 2008, Vol.993 (1), p.383-386

2008

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Modeling Mathematical of the Behavior of Up Converter when Implemented in Bifacial Silicon Solar Cells

Energy procedia, 2016-01, Vol.102, p.80-86

2016

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Visible and 1.54 $\mu$m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering

IEEE journal of selected topics in quantum electronics, 2010, Vol.16 (1), p.114-123

2010

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Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials

Radiation effects and defects in solids, 2008-06, Vol.163 (4-6), p.589-595

2008

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Annealing of Thin-film Cadmium Telluride Photovoltaics Using Holographically Controlled Laser Processing

Energy procedia, 2016-01, Vol.102, p.70-79

2016

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Electroluminescence from Er-doped Si-rich silicon nitride lightemitting diodes

Applied physics letters, 2010-08, Vol.97 (8), p.081109-081109-3

2010

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Enhancement of the 1.54 μm Er3+ emission from quasiperiodic plasmonic arrays

Applied physics letters, 2010-02, Vol.96 (7), p.71113

2010

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Implantation and sputtering of ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Materials science in semiconductor processing, 2006-08, Vol.9 (4-5), p.655-658

2006

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Synthesis and optical properties of Er super(3+) and Eu super(3+) doped SrAl sub(2)O sub(4) phosphor ceramic

Journal of luminescence, 2011-11, Vol.131 (11), p.2432-2439

2011

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Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing

Journal of applied physics, 2008-12, Vol.104 (12)

2008

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Synthesis and optical properties of Er 3+ and Eu 3+ doped SrAl 2O 4 phosphor ceramic

Journal of luminescence, 2011, Vol.131 (11), p.2432-2439

2011

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Photonic Crystal and Plasmonic Silicon-Based Light Sources

IEEE journal of selected topics in quantum electronics, 2010-01, Vol.16 (1), p.132-140

2010

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Erratum: "Enhancement of the 1.54 μ m Er 3 + emission from quasiperiodic plasmonic arrays" [ Appl. Phys. Lett. 96 , 071113 ( 2010 ) ]

Applied physics letters, 2010-04, Vol.96 (14), p.149901-149901-1

2010

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Erratum: “Enhancement of the 1.54 μm Er3+ emission from quasiperiodic plasmonic arrays” [Appl. Phys. Lett. 96, 071113 (2010)]

Applied physics letters, 2010-04, Vol.96 (14)

2010

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Enhancement of the 1.54 μ m Er 3 + emission from quasiperiodicplasmonic arrays

Applied physics letters, 2010-02, Vol.96 (7), p.071113-071113-3

2010

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Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

Journal of applied physics, 2006-10, Vol.100 (7)

2006

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Visible and 1.54 \mum Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering

IEEE journal of selected topics in quantum electronics, 2010-01, Vol.16 (1), p.114-123

2010

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Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

Journal of applied physics, 2007-07, Vol.102 (2)

2007

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Phase separation in SiGe nanocrystals embedded in SiO 2 matrix during high temperature annealing

Journal of applied physics, 2008-12, Vol.104 (12), p.124309-124309-6

2008

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Evolution of SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-10, Vol.239 (4), p.419-425

2005

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Raman and XRD studies of Ge nanocrystals in alumina films grown by RF-magnetron sputtering

Vacuum, 2008-08, Vol.82 (12), p.1466-1469

2008

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Depth profile investigations of silicon nanocrystals formed in sapphireby ion implantation

Journal of applied physics, 2007-07, Vol.102 (2), p.024309-024309-5

2007

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Effect of Built-in Electric Field on Miniband Structure and Carrier Nonradiative Recombination in InGaAs/GaAsP Superlattice Investigated Using Photoreflectance and Photoluminescence Spectroscopy

Editorial for the Proceedings of the 2016 E-MRS Spring Meeting Symposium T - Advanced Materials and Characterization Techniques for Solar Cells III

Thin Film Polycrystalline Silicon Solar Cells Studied by Transient Terahertz Probe Spectroscopy

Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses

Modeling Mathematical of the Behavior of Up Converter when Implemented in Bifacial Silicon Solar Cells

Visible and 1.54 $\mu$m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering

Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials

Annealing of Thin-film Cadmium Telluride Photovoltaics Using Holographically Controlled Laser Processing

Electroluminescence from Er-doped Si-rich silicon nitride lightemitting diodes

Enhancement of the 1.54 μm Er3+ emission from quasiperiodic plasmonic arrays

Implantation and sputtering of ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Synthesis and optical properties of Er super(3+) and Eu super(3+) doped SrAl sub(2)O sub(4) phosphor ceramic

Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing

Synthesis and optical properties of Er 3+ and Eu 3+ doped SrAl 2O 4 phosphor ceramic

Photonic Crystal and Plasmonic Silicon-Based Light Sources

Erratum: "Enhancement of the 1.54 μ m Er 3 + emission from quasiperiodic plasmonic arrays" [ Appl. Phys. Lett. 96 , 071113 ( 2010 ) ]

Erratum: “Enhancement of the 1.54 μm Er3+ emission from quasiperiodic plasmonic arrays” [Appl. Phys. Lett. 96, 071113 (2010)]

Enhancement of the 1.54 μ m Er 3 + emission from quasiperiodicplasmonic arrays

Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

Visible and 1.54 \mum Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

Phase separation in SiGe nanocrystals embedded in SiO 2 matrix during high temperature annealing

Evolution of SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation

Raman and XRD studies of Ge nanocrystals in alumina films grown by RF-magnetron sputtering

Depth profile investigations of silicon nanocrystals formed in sapphireby ion implantation

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