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Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Journal of applied physics, 2005-10, Vol.98 (8)

2005

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Electron Confinement Due to Reflection from the Interface in Heterojunctions

Physica status solidi. B. Basic research, 1991-05, Vol.165 (1), p.K9-K12

1991

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Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs

Journal of applied physics, 2001-09, Vol.90 (6), p.2813-2817

2001

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Interface photoluminescence in type II broken-gap P–Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures

Journal of applied physics, 2001-10, Vol.90 (8), p.3988-3992

2001

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Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

Physica. E, Low-dimensional systems & nanostructures, 2004, Vol.20 (3), p.491-495

2004

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Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy

Applied physics letters, 2001-03, Vol.78 (12), p.1655-1657

2001

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Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 mm

Applied physics. B, Lasers and optics, 2000-10, Vol.71 (4), p.481-485

2000

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Semiconductor WGM Lasers for the Mid-IR Spectral Range

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (9), p.1087

Sherstnev, V. V.

2005

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The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2–3.6 μm (2800–3100 cm −1 )

Review of scientific instruments, 2001-04, Vol.72 (4), p.1988-1992

2001

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Quantum magnetotransport at a type II broken-gap single heterointerface

Surface science, 2001, Vol.482, p.1083-1089

2001

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Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Optical materials, 2002-06, Vol.19 (4), p.455-459

2002

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Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

Crystal research and technology (1979), 2002-02, Vol.37 (2-3), p.259-267

2002

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2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

Applied physics letters, 1994-05, Vol.64 (19), p.2480-2482

1994

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Electroluminescence and photoelectric properties of type II broken-gap n -In(Ga)As(Sb)/ N -GaSb heterostructures

Journal of applied physics, 1999-12, Vol.86 (11), p.6264-6268

1999

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Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-µm Ranges

Semiconductors (Woodbury, N.Y.), 2003-04, Vol.37 (4), p.485-490

2003

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MOCVD growth and Mg-doping of InAs layers

Semiconductors (Woodbury, N.Y.), 2004-05, Vol.38 (5), p.537-542

2004

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Special features of spontaneous and coherent emission of IR lasers based on a single type-II broken-gap heterojunction

Semiconductors (Woodbury, N.Y.), 2003-08, Vol.37 (8), p.985-991

2003

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Mid-infrared lasers operating on a single quantum well at the type II heterointerface

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242), 2001, Vol.2, p.534-535 vol.2

2001

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Properties of GaSb-based LEDs with grid ohmic contacts

Semiconductors (Woodbury, N.Y.), 2004-11, Vol.38 (11), p.1356-1363

2004

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Tunable 3.3 μm InAsSb/InAsSbP diode lasers: a new concept of fast lasing due to nonlinear optical effects

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 2001-03, Vol.359 (1780), p.523-531

2001

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The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt

Semiconductors (Woodbury, N.Y.), 2005-03, Vol.39 (3), p.308-312

2005

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Single-mode fast-tunable lasers for laser-diode spectroscopy

Semiconductors (Woodbury, N.Y.), 2003-08, Vol.37 (8), p.960-970

2003

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Transformation of a short-wavelength emission band of a double-charged intrinsic acceptor into a long-wavelength band in GaSb-based LEDs

Semiconductors (Woodbury, N.Y.), 2004-06, Vol.38 (6), p.717-723

2004

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Properties of GaSb-based light-emitting diodes with chemically cut substrates

Semiconductors (Woodbury, N.Y.), 2003-12, Vol.37 (12), p.1414-1420

2003

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Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction

Physica status solidi. C, 2003-01 (3), p.194-198

2003

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Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Electron Confinement Due to Reflection from the Interface in Heterojunctions

Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs

Interface photoluminescence in type II broken-gap P–Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures

Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy

Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 mm

Semiconductor WGM Lasers for the Mid-IR Spectral Range

The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2–3.6 μm (2800–3100 cm −1 )

Quantum magnetotransport at a type II broken-gap single heterointerface

Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

Electroluminescence and photoelectric properties of type II broken-gap n -In(Ga)As(Sb)/ N -GaSb heterostructures

Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-µm Ranges

MOCVD growth and Mg-doping of InAs layers

Special features of spontaneous and coherent emission of IR lasers based on a single type-II broken-gap heterojunction

Mid-infrared lasers operating on a single quantum well at the type II heterointerface

Properties of GaSb-based LEDs with grid ohmic contacts

Tunable 3.3 μm InAsSb/InAsSbP diode lasers: a new concept of fast lasing due to nonlinear optical effects

The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt

Single-mode fast-tunable lasers for laser-diode spectroscopy

Transformation of a short-wavelength emission band of a double-charged intrinsic acceptor into a long-wavelength band in GaSb-based LEDs

Properties of GaSb-based light-emitting diodes with chemically cut substrates

Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction

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