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Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices

Physica status solidi. C, 2015-04, Vol.12 (4-5), p.434-438

2015

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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Applied physics letters, 2011-12, Vol.99 (25), p.251110-251110-3

2011

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Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence

Physica status solidi. C, 2010-10, Vol.7 (10), p.2390-2393

2010

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Optimization of Annealing Process for Improved InGaN Solar Cell Performance

Journal of electronic materials, 2013-12, Vol.42 (12), p.3467-3470

2013

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Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN

Applied physics letters, 2003-05, Vol.82 (21), p.3674-3676

2003

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Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

Journal of electronic materials, 2006-04, Vol.35 (4), p.641-646

2006

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A III-nitride polarization enhanced electron filter for controlling the spectral response of solar-blind AlGaN/AlN/SiC photodiodes

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.782-785

2014

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Deep ultraviolet enhanced silicon carbide avalanche photodiodes

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

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Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

Applied physics letters, 2009-06, Vol.94 (24)

2009

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Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

Applied physics letters, 2001-08, Vol.79 (9), p.1303-1305

2001

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Defect reduction mechanisms in the nanoheteroepitaxy of GaN on SiC

Journal of applied physics, 2004-02, Vol.95 (3), p.1450-1454

2004

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Polarization field crossover in semi-polar InGaN/GaN single quantum wells

Physica status solidi. C, 2010-10, Vol.7 (10), p.2378-2381

2010

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First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm

Physica status solidi. C, 2008-05, Vol.5 (6), p.2244-2246

2008

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A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well

Applied physics letters, 2000-03, Vol.76 (10), p.1288-1290

2000

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Generation of sub-40 fs pulses from a mode-locked dual-gain-media Nd:glass laser

Applied physics. B, Lasers and optics, 2002-06, Vol.74 (S1), p.s177-s179

2002

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InN layers grown by the HVPE

Physica status solidi. C, 2008-05, Vol.5 (6), p.1792-1794

2008

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Semiconductor ultraviolet emitters and detectors with potential for wireless communications

2012 IEEE Photonics Society Summer Topical Meeting Series, 2012, p.134-135

Wraback, M.

2012

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Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.846-849

2005

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Benefits of negative polarization charge in n -InGaN on p -GaN single heterostructure light emitting diode with p -side down

Physica status solidi. C, 2009-02, Vol.6 (2), p.585-588

2009

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Measurements of InGaAs metal–semiconductor–metal photodetectors under high-illumination conditions

Applied physics letters, 2002-04, Vol.80 (16), p.2848-2850

2002

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Solar-blind AlxGa1−xN/AlN/SiC photodiodes with a polarization-induced electron filter

Applied physics letters, 2013-08, Vol.103 (7)

2013

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GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

Applied physics letters, 2006-07, Vol.89 (1), p.011112-011112-3

2006

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GaN doped with neodymium by plasma-assisted molecular beam epitaxy

Applied physics letters, 2008-02, Vol.92 (6), p.061108-061108-3

2008

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Double heterostructure ultraviolet light emitting diodes with nanometer scale compositionally inhomogeneous active regions

Physica status solidi. C, 2008-05, Vol.5 (6), p.2303-2305

2008

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Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN

Physica status solidi. B. Basic research, 2002-12, Vol.234 (3), p.810-816

2002

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Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence

Optimization of Annealing Process for Improved InGaN Solar Cell Performance

Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN

Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

A III-nitride polarization enhanced electron filter for controlling the spectral response of solar-blind AlGaN/AlN/SiC photodiodes

Deep ultraviolet enhanced silicon carbide avalanche photodiodes

Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

Defect reduction mechanisms in the nanoheteroepitaxy of GaN on SiC

Polarization field crossover in semi-polar InGaN/GaN single quantum wells

First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm

A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well

Generation of sub-40 fs pulses from a mode-locked dual-gain-media Nd:glass laser

InN layers grown by the HVPE

Semiconductor ultraviolet emitters and detectors with potential for wireless communications

Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN

Benefits of negative polarization charge in n -InGaN on p -GaN single heterostructure light emitting diode with p -side down

Measurements of InGaAs metal–semiconductor–metal photodetectors under high-illumination conditions

Solar-blind AlxGa1−xN/AlN/SiC photodiodes with a polarization-induced electron filter

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

GaN doped with neodymium by plasma-assisted molecular beam epitaxy

Double heterostructure ultraviolet light emitting diodes with nanometer scale compositionally inhomogeneous active regions

Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN

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