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Si and N dangling bond creation in silicon nitride thin films

Applied physics letters, 1993-11, Vol.63 (19), p.2685-2687

1993

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Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films

Journal of applied physics, 1993-09, Vol.74 (6), p.4034-4046

1993

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Photoinduced hysteresis changes and charge trapping in BaTiO[sub 3] dielectrics

Applied physics letters, 1994-02, Vol.64:7

1994

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Photo-assisted switching and trapping in BaTiO 3 and Pb(Zr, Ti)O 3 ferroelectrics

Journal of non-crystalline solids, 1995, Vol.187, p.448-452

1995

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DR-positive T cells in autism: association with decreased plasma levels of the complement C4B protein

Neuropsychobiology, 1995-01, Vol.31 (2), p.53-57

1995

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Charge trapping and device behavior in ferroelectric memories

Applied physics letters, 1996-05, Vol.68 (19), p.2660-2662

1996

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Microscopic nature of border traps in MOS oxides

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.1817-1827

1994

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Electron-beam-induced charging of phosphors for low voltage display applications

Journal of applied physics, 1997-06, Vol.81 (12), p.7994-8001

1997

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Increased Frequency of the Extended or Ancestral Haplotype B44-SC3O-DR4 in Autism

Neuropsychobiology, 1995, Vol.32 (3), p.120-123

1995

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SHORTER NOTICES

The English historical review, 1994, Vol.CIX (430), p.144-145

WARREN, W.L.

1994

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Polarization-induced trapped charge in ferroelectrics

Applied physics letters, 1997-04, Vol.70 (15), p.2010-2012

1997

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Cathodoluminescence, reflectivity changes, and accumulation of graphitic carbon during electron beam aging of phosphors

Journal of applied physics, 1997-11, Vol.82 (9), p.4515-4519

1997

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Airborne aerosol inlet passing efficiency measurement

Journal of Geophysical Research, 1990-09, Vol.95 (D10), p.16369-16381

1990

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H + and D + associated charge buildup during annealing of Si/SiO 2/Si structures

Journal of non-crystalline solids, 1997, Vol.216, p.116-123

1997

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A study of proton generation in Si/SiO 2/Si structures

Microelectronic engineering, 1999, Vol.48 (1), p.167-170

1999

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Creation and Properties of Nitrogen Dangling Bond Defects in Silicon Nitride Thin Films

Journal of the Electrochemical Society, 1996-11, Vol.143 (11), p.3685-3691

1996

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Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride

Journal of applied physics, 1991-07, Vol.70 (1), p.346-354

1991

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Paramagnetic defect centers in BESOI and SIMOX buried oxides

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1993-12, Vol.40 (6), p.1755-1764

1993

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A non-volatile MOSFET memory device based on mobile protons in SiO 2 thin films

Journal of non-crystalline solids, 1999, Vol.254 (1), p.1-10

1999

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Reactions and diffusion during annealing-induced H + generation in SOI buried oxides

Microelectronic engineering, 1999-09, Vol.48 (1), p.363-366

1999

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A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films

Journal of non-crystalline solids, 1999-09, Vol.254 (1-3), p.1-10

1999

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Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films

Journal of applied physics, 1991-08, Vol.70 (4), p.2220-2225

1991

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Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices

Journal of applied physics, 1997-11, Vol.82 (10), p.5138-5143

1997

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Radiation-induced H + trapping in buried SiO 2

Microelectronic engineering, 1997, Vol.36 (1), p.241-244

1997

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Electron and hole trapping in doped oxides

IEEE transactions on nuclear science, 1995-12, Vol.42 (6), p.1731-1739

1995

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Si and N dangling bond creation in silicon nitride thin films

Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films

Photoinduced hysteresis changes and charge trapping in BaTiO[sub 3] dielectrics

Photo-assisted switching and trapping in BaTiO 3 and Pb(Zr, Ti)O 3 ferroelectrics

DR-positive T cells in autism: association with decreased plasma levels of the complement C4B protein

Charge trapping and device behavior in ferroelectric memories

Microscopic nature of border traps in MOS oxides

Electron-beam-induced charging of phosphors for low voltage display applications

Increased Frequency of the Extended or Ancestral Haplotype B44-SC3O-DR4 in Autism

SHORTER NOTICES

Polarization-induced trapped charge in ferroelectrics

Cathodoluminescence, reflectivity changes, and accumulation of graphitic carbon during electron beam aging of phosphors

Airborne aerosol inlet passing efficiency measurement

H + and D + associated charge buildup during annealing of Si/SiO 2/Si structures

A study of proton generation in Si/SiO 2/Si structures

Creation and Properties of Nitrogen Dangling Bond Defects in Silicon Nitride Thin Films

Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride

Paramagnetic defect centers in BESOI and SIMOX buried oxides

A non-volatile MOSFET memory device based on mobile protons in SiO 2 thin films

Reactions and diffusion during annealing-induced H + generation in SOI buried oxides

A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films

Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films

Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices

Radiation-induced H + trapping in buried SiO 2

Electron and hole trapping in doped oxides

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