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Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers

Materials science forum, 2019-05, Vol.954, p.26-30

2019

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Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

Materials science forum, 2019-05, Vol.954, p.31-34

2019

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Porous liquids: A promising class of media for gas separation

Angewandte Chemie (International ed.), 2014-11, Vol.54 (3)

2014

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Coordination-supported organic polymers: mesoporous inorganic-organic materials with preferred stabilityElectronic supplementary information (ESI) available: Experimental section and supplementary figures. See DOI: 10.1039/c8qi00471d

2018-08

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Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the Science Challenge Project, China (Grant No. TZ2018003), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61804149), the Beijing NOVA Program, China (Grant Nos. 2016071 and Z181100006218121), the Beijing Municipal Science and Te

Chinese physics B, 2019-06, Vol.28 (6)

2019

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Inside Back Cover: Porous Liquids: A Promising Class of Media for Gas Separation (Angew. Chem. Int. Ed. 3/2015)

Angewandte Chemie (International ed.), 2015-01, Vol.54 (3), p.1041-1041

International ed. in English, 2015

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Prediction of high-density and high-mobility two-dimensional electron gas at AlxGa1−xN/4H-SiC interface

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Influences of annealing on structural and compositional properties of Al 2 O 3 thin films grown on 4H–SiC by atomic layer deposition

Chinese physics B, 2016-12, Vol.25 (12), p.128104

2016

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Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-SiC by atomic layer deposition Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61274007), and the Beijing Nova Program, China (Grant No. xx2016071), and the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201502)

Chinese physics B, 2016-10, Vol.25 (12)

2016

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Innenrücktitelbild: Porous Liquids: A Promising Class of Media for Gas Separation (Angew. Chem. 3/2015)

Angewandte Chemie, 2015-01, Vol.127 (3), p.1055-1055

2015

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Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113 and 61574140), the Beijing NOVA Program, China (Grant No. Z1611000049161132016071), China Academy of Engineering Physics (CAEP) Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201502), t

Chinese physics B, 2017-09, Vol.26 (10)

2017

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Fast Homoepitaxial Growth of 4H-SiC Films on 4[degrees] off-Axis Substrates in a SiH sub(4)-C sub(2)H sub(4)-H sub(2) System

Chinese physics letters, 2013-12, Vol.30 (12), p.128101-1-128101-4

2013

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Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Chinese physics letters, 2013-12, Vol.30 (12), p.128101

2013

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Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

Materials science forum, 2012-05, Vol.717-720, p.105-108

2012

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In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

Materials science forum, 2009, Vol.600-603, p.147-150

2009

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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Materials science forum, 2009, Vol.600-603, p.251-254

2009

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Homoepitaxial Growth and Device Characteristics of SiC on Off-Oriented Si-Face (0001) 4H-SiC

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.935-937

2006

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Studies on the preparation and on the properties of sea snail enzymes

Hydrobiologia, 1984-09, Vol.116-117 (1), p.319-320

1984

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Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications

Materials science forum, 2007-01, Vol.556-557, p.179-182

2007

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Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection

Materials science forum, 2007-01, Vol.556-557, p.109-112

2007

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Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer

Materials science forum, 2007-01, Vol.556-557, p.387-390

2007

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On antenna with quasi 1-D quantum wire array structure

Zhōngguó kēxué jìshù dàxué xuébào, 2006-03, Vol.36 (3), p.344-344

2006

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介孔氧化硅在战伤性骨创伤救治中的应用研究进展

解放军医学杂志, 2021, Vol.46 (2), p.175-180

2021

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准一维量子线阵列天线研究

Zhōngguó kēxué jìshù dàxué xuébào, 2006, Vol.36 (3), p.344-346

朱旗盛升姚连增蔡维理张枢姜万顺方葛丰李立功

2006

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Multi-wafer 3C-SiC thin films grown on Si（100） in a vertical HWLPCVD reactor

半导体学报, 2011, Vol.32 (6), p.17-20

闫果果孙国胜吴海雷王雷赵万顺刘兴昉曾一平温家良

2011

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Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

Porous liquids: A promising class of media for gas separation

Coordination-supported organic polymers: mesoporous inorganic-organic materials with preferred stabilityElectronic supplementary information (ESI) available: Experimental section and supplementary figures. See DOI: 10.1039/c8qi00471d

Inside Back Cover: Porous Liquids: A Promising Class of Media for Gas Separation (Angew. Chem. Int. Ed. 3/2015)

Prediction of high-density and high-mobility two-dimensional electron gas at AlxGa1−xN/4H-SiC interface

Influences of annealing on structural and compositional properties of Al 2 O 3 thin films grown on 4H–SiC by atomic layer deposition

Innenrücktitelbild: Porous Liquids: A Promising Class of Media for Gas Separation (Angew. Chem. 3/2015)

Fast Homoepitaxial Growth of 4H-SiC Films on 4[degrees] off-Axis Substrates in a SiH sub(4)-C sub(2)H sub(4)-H sub(2) System

Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Homoepitaxial Growth and Device Characteristics of SiC on Off-Oriented Si-Face (0001) 4H-SiC

Studies on the preparation and on the properties of sea snail enzymes

Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications

Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection

Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer

On antenna with quasi 1-D quantum wire array structure

介孔氧化硅在战伤性骨创伤救治中的应用研究进展

准一维量子线阵列天线研究

Multi-wafer 3C-SiC thin films grown on Si（100） in a vertical HWLPCVD reactor

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