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Barrierless formation and faceting of SiGe islands on Si(001)

Physical review letters, 2002-11, Vol.89 (19), p.196104-196104, Article 196104

2002

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Gate-controlled rectifying barrier in a two-dimensional hole gas

Nanotechnology, 2008-08, Vol.19 (33), p.335201-335201

2008

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Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates

Semiconductor science and technology, 2015-10, Vol.30 (10), p.105001

2015

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High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.279-284

2004

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Scattering mechanisms in high-mobility strained Ge channels

Applied physics letters, 2004-04, Vol.84 (16), p.3058-3060

2004

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Analysis of edge threading dislocations b→=12〈110〉 in three dimensional Ge crystals grown on (001)-Si substrates

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-10, Vol.134 (2), p.118-124

2006

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Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge∕SiGe quantum wells

Applied physics letters, 2006-12, Vol.89 (26)

2006

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Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Solid-state electronics, 2004-08, Vol.48 (8), p.1317-1323

2004

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Hot carrier scattering at interfacial dislocations observed by ballistic-electron-emission microscopy

Physical review letters, 1994-07, Vol.73 (4), p.577-580

1994

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Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

Journal of crystal growth, 2005-08, Vol.281 (2), p.281-289

2005

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High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition

Thin solid films, 2004-07, Vol.459 (1), p.37-40

2004

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Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

Journal of low temperature physics, 2010-04, Vol.159 (1-2), p.216-221

2010

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Scanning tunnelling microscopy studies of silicides

Journal of physics. D, Applied physics, 1999-08, Vol.32 (15), p.R71-R87

1999

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AFM-study of sticking effects for microparts handling

Wear, 2000-03, Vol.238 (1), p.20-24

2000

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Critical role of the surface reconstruction in the thermodynamic stability of (105) Ge pyramids on Si(001)

Physical review letters, 2002-06, Vol.88 (25 Pt 1), p.256103-256103, Article 256103

2002

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Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

Journal of crystal growth, 2013-09, Vol.378, p.109-112

2013

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Effective g factor of 2D holes in strained Ge quantum wells

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Investigation of the injection velocity of holes in strained Si pMOSFETs

Semiconductor science and technology, 2005-05, Vol.20 (5), p.L20-L22

2005

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Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers

Physical review. B, Condensed matter and materials physics, 2012-01, Vol.85 (3), Article 035303

2012

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Investigating the lateral motion of SiGe islands by selective chemical etching

Surface science, 2006-06, Vol.600 (12), p.2608-2613

2006

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Atomic-Scale Variations of the Tunneling Distribution in a Scanning Tunneling Microscope Observed by Ballistic-Electron-Emission Microscopy

Physical review letters, 1995-05, Vol.74 (20), p.3999-4002

1995

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Effect of Ba termination layer on chemical and electrical passivation of Ge (1 0 0) surfaces

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.701-705

2006

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Direct gap related optical transitions in Ge/SiGe quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2009-05, Vol.41 (6), p.972-975

2009

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Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.290-296

2004

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Barrierless formation and faceting of SiGe islands on Si(001)

Gate-controlled rectifying barrier in a two-dimensional hole gas

Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates

High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

Scattering mechanisms in high-mobility strained Ge channels

Analysis of edge threading dislocations b→=12〈110〉 in three dimensional Ge crystals grown on (001)-Si substrates

Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications

Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge∕SiGe quantum wells

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Hot carrier scattering at interfacial dislocations observed by ballistic-electron-emission microscopy

Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition

Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

Scanning tunnelling microscopy studies of silicides

AFM-study of sticking effects for microparts handling

Critical role of the surface reconstruction in the thermodynamic stability of (105) Ge pyramids on Si(001)

Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

Effective g factor of 2D holes in strained Ge quantum wells

Investigation of the injection velocity of holes in strained Si pMOSFETs

Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers

Investigating the lateral motion of SiGe islands by selective chemical etching

Atomic-Scale Variations of the Tunneling Distribution in a Scanning Tunneling Microscope Observed by Ballistic-Electron-Emission Microscopy

Effect of Ba termination layer on chemical and electrical passivation of Ge (1 0 0) surfaces

Direct gap related optical transitions in Ge/SiGe quantum wells

Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature

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