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On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films

Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1178-1187

2018

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Erratum to: Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2014-06, Vol.16 (6), p.1, Article 2434

2014

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Visible photoluminescence in amorphous SiOx thin films prepared by silicon evaporation under a molecular oxygen atmosphere

Applied physics letters, 2003-06, Vol.82 (22), p.3877-3879

2003

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Atomic scale investigation of Si and Ce-rich nanoclusters in Ce-doped SiO1.5 thin films

Physica status solidi. C, 2015-12, Vol.12 (12), p.1313-1316

2015

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Observation of a nanoscale phase separation in blue-emitting Ce-doped SiO1.5 thin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (48), p.12499-12506

2015

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On the low-temperature synthesis of SWCNTs by thermal CVD

Physica. E, Low-dimensional systems & nanostructures, 2008-05, Vol.40 (7), p.2268-2271

2008

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Photoluminescence properties of Ce3+ ions in Ce-doped SiO1.5 thin films containing Si nanocrystals

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1630-1633

2014

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Preparation of dense, smooth and homogeneous amorphous silicon nitride films by nitrogen-ion-beam assisted evaporation

Journal of physics. D, Applied physics, 2008-09, Vol.41 (17), p.175410-175410 (4)

2008

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Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeO x /SiO 2 multilayers

Materials research express, 2016-08, Vol.3 (8), p.85019

2016

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Kinetic study of GeO amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy

Journal of non-crystalline solids, 2024-05, Vol.631, p.122929, Article 122929

2024

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Optical properties of a silicon-nanocrystal-based-microcavity prepared by evaporation

Optical materials, 2011-06, Vol.33 (8), p.1248-1251

2011

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Improvement of the photoluminescence properties in a-SiNx films by introduction of hydrogen

Applied physics letters, 2001-10, Vol.79 (14), p.2172-2174

2001

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Ventricular morphology does not impact mid-term outcome after extracardiac total cavopulmonary connection

Archives of cardiovascular diseases, 2014-08, Vol.107 (8), p.486-486

2014

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X-ray diffraction and Mössbauer study of (Fe 1− x Ni x ) 4N (0.2 ≤ x ≤ 0.6) films

Journal of alloys and compounds, 2007-08, Vol.440 (1), p.43-45

2007

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Определение энергии активации реакции диспропорционирования аморфной пленки GeO-=SUB=-x-=/SUB=- на кварцевой подложке с использованием спектроскопии комбинационного рассеяния света

Žurnal tehničeskoj fiziki, 2023, Vol.93 (8), p.1209

2023

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Effects of the amorphous-crystalline transition on the luminescence of quantum confined silicon nanoclusters

Europhysics letters, 2004-06, Vol.66 (5), p.674-679

2004

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Intense visible photoluminescence in amorphous SiOx and SiOx:H films prepared by evaporation

Applied physics letters, 1998-06, Vol.72 (24), p.3157-3159

1998

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Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

Optical materials, 2021-12, Vol.122, p.111736, Article 111736

2021

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Kinetic study of GeOx amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy

Journal of non-crystalline solids, 2024-05, Vol.631, Article 122929

2024

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Visible photoluminescence in amorphous SiNx thin films prepared by reactive evaporation

Applied physics letters, 2000-11, Vol.77 (22), p.3499-3501

2000

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Formation of SiP 2 Nanocrystals Embedded in SiO 2 from Phosphorus-Rich SiO 1.5 Thin Films

Journal of physical chemistry. C, 2020-04, Vol.124 (14), p.7973-7978

2020

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Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-02, Vol.535, p.132-136

2023

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Evolution of Silicon and Hydrogen Bonding in Silicon-Rich Nitride Films Prepared by Plasma-Enhanced Chemical Vapor Deposition and Annealed Under High Pressure

Nanoscience and nanotechnology letters, 2013-03, Vol.4 (3), p.364-368

2013

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Influence of the barrier thickness on the photoluminescence properties of amorphous Si/SiO multilayers

Journal of luminescence, 2005-05, Vol.113 (1), p.64-68

2005

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Evolution with annealing treatments of the size of silicon nanocrystallites embedded in a SiNx matrix and correlation with optical properties

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-08, Vol.101 (1-3), p.186-189

2003

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On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films

Erratum to: Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

Visible photoluminescence in amorphous SiOx thin films prepared by silicon evaporation under a molecular oxygen atmosphere

Atomic scale investigation of Si and Ce-rich nanoclusters in Ce-doped SiO1.5 thin films

Observation of a nanoscale phase separation in blue-emitting Ce-doped SiO1.5 thin films

On the low-temperature synthesis of SWCNTs by thermal CVD

Photoluminescence properties of Ce3+ ions in Ce-doped SiO1.5 thin films containing Si nanocrystals

Preparation of dense, smooth and homogeneous amorphous silicon nitride films by nitrogen-ion-beam assisted evaporation

Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeO x /SiO 2 multilayers

Kinetic study of GeO amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy

Optical properties of a silicon-nanocrystal-based-microcavity prepared by evaporation

Improvement of the photoluminescence properties in a-SiNx films by introduction of hydrogen

Ventricular morphology does not impact mid-term outcome after extracardiac total cavopulmonary connection

X-ray diffraction and Mössbauer study of (Fe 1− x Ni x ) 4N (0.2 ≤ x ≤ 0.6) films

Effects of the amorphous-crystalline transition on the luminescence of quantum confined silicon nanoclusters

Intense visible photoluminescence in amorphous SiOx and SiOx:H films prepared by evaporation

Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

Kinetic study of GeOx amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy

Visible photoluminescence in amorphous SiNx thin films prepared by reactive evaporation

Formation of SiP 2 Nanocrystals Embedded in SiO 2 from Phosphorus-Rich SiO 1.5 Thin Films

Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing

Evolution of Silicon and Hydrogen Bonding in Silicon-Rich Nitride Films Prepared by Plasma-Enhanced Chemical Vapor Deposition and Annealed Under High Pressure

Influence of the barrier thickness on the photoluminescence properties of amorphous Si/SiO multilayers

Evolution with annealing treatments of the size of silicon nanocrystallites embedded in a SiNx matrix and correlation with optical properties

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