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Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Applied surface science, 1996-07, Vol.100, p.498-502

1996

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1.54 μm luminescence of Er-MeV implanted silicon

Journal of luminescence, 1994-04, Vol.60-61, p.595-598

1994

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Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997, Vol.121 (1), p.199-202

1997

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Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-05, Vol.127-128, p.350-354

1997

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Structural and electrical properties of Co-doped β-FeSi2 thin films prepared by RF magnetron sputtering

Physics procedia, 2012, Vol.23, p.9-12

2012

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Optical and electrical characterizations of Mn doped p-type β-FeSi2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-01, Vol.147 (1-4), p.337-342

1999

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Photoluminescence from Ge/Si Nanocrystals Embedded in Silicon Oxide Matrix Annealed in Hydrogen Gas

MRS proceedings, 2008, Vol.1145 (1), Article 1145-MM04-11

2008

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The crystalline effect of the of the β-FeSi2 film using two types target prepared by pulsed laser deposition

International Conference on Electrical & Computer Engineering (ICECE 2010), 2010, p.210-213

2010

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Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin

Physics procedia, 2012, Vol.23, p.69-72

2012

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Photoluminescence studies of epitaxial Si1−xGex and Si1−x−yGexCy layers on Si formed by ion beam synthesis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-01, Vol.121 (1-4), p.146-150

1997

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Structural and electrical properties of β-FeSi2 bulk materials for thermoelectric applications

Physics procedia, 2012, Vol.23, p.13-16

2012

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Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si

Journal of applied physics, 1996-11, Vol.80 (10), p.5955-5962

1996

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Conditions for the formation of defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy

Applied physics letters, 1993-03, Vol.62 (13), p.1527-1529

1993

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Overexpression of Aquaporin 1 in the Tunica Vaginalis May Contribute to Adult-Onset Primary Hydrocele Testis

Advances in Urology, 2014-01, Vol.2014 (2014), p.50-54

2014

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Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Journal of the Electrochemical Society, 2005, Vol.152 (6), p.G506

2005

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Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

Applied physics letters, 1993-10, Vol.63 (14), p.1951-1953

1993

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Hydrodynamic description of epitaxial film growth in a horizontal reactor

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.61-65

1997

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Mechanism of the negative slope in the current-light characteristics of twin-stripe lasers

Journal of applied physics, 1987-05, Vol.61 (9), p.4700-4702

1987

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Infrared thermal chemical vapor deposition of thin SiN film on InP : dependence of deposition rate and film characteristics on pressure and gas flux ratio

Japanese Journal of Applied Physics, 1994, Vol.33 (5A), p.2679-2683

1994

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Maximal respiratory pressure in healthy Japanese children

Journal of Physical Therapy Science, 2017, Vol.29 (3), p.515-518

2017

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P-6: Easy Assessment Tool for Motor Imagery Ability

Journal of Physical Therapy Science, 2016, Vol.28 (suppl-2), p.31-32

2016

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A column-base InP lateral bipolar transistor

IEEE electron device letters, 1988-08, Vol.9 (8), p.380-382

1988

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Light Emission from Er-Implanted Silicon Using Anodization

Materials science forum, 1995-01, Vol.196-201, p.603-608

1995

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Luminescence properties of Er3+ in SiN/PS : Er

Journal of luminescence, 1998-12, Vol.80 (1-4), p.339-342

1998

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Influence of peripheral magnetic stimulation of soleus muscle on H and M waves

Journal of Physical Therapy Science, 2018, Vol.30 (5), p.716-718

2018

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Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

1.54 μm luminescence of Er-MeV implanted silicon

Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy

Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation

Structural and electrical properties of Co-doped β-FeSi2 thin films prepared by RF magnetron sputtering

Optical and electrical characterizations of Mn doped p-type β-FeSi2

Photoluminescence from Ge/Si Nanocrystals Embedded in Silicon Oxide Matrix Annealed in Hydrogen Gas

The crystalline effect of the of the β-FeSi2 film using two types target prepared by pulsed laser deposition

Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin

Photoluminescence studies of epitaxial Si1−xGex and Si1−x−yGexCy layers on Si formed by ion beam synthesis

Structural and electrical properties of β-FeSi2 bulk materials for thermoelectric applications

Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si

Conditions for the formation of defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy

Overexpression of Aquaporin 1 in the Tunica Vaginalis May Contribute to Adult-Onset Primary Hydrocele Testis

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

Hydrodynamic description of epitaxial film growth in a horizontal reactor

Mechanism of the negative slope in the current-light characteristics of twin-stripe lasers

Infrared thermal chemical vapor deposition of thin SiN film on InP : dependence of deposition rate and film characteristics on pressure and gas flux ratio

Maximal respiratory pressure in healthy Japanese children

P-6: Easy Assessment Tool for Motor Imagery Ability

A column-base InP lateral bipolar transistor

Light Emission from Er-Implanted Silicon Using Anodization

Luminescence properties of Er3+ in SiN/PS : Er

Influence of peripheral magnetic stimulation of soleus muscle on H and M waves

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