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Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

Semiconductors (Woodbury, N.Y.), 2007-10, Vol.41 (10), p.1181-1184

2007

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The impact of self-heating and its implications on hot-carrier degradation – A modeling study

Microelectronics and reliability, 2021-07, Vol.122, p.114156, Article 114156

2021

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Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.20.5.1-20.5.4

2019

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Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

Microelectronic engineering, 2006-02, Vol.83 (2), p.376-380

2006

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Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon

Microelectronics and reliability, 2007-04, Vol.47 (4), p.669-672

2007

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A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2

Semiconductors (Woodbury, N.Y.), 2006-04, Vol.40 (4), p.491-496

2006

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Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

Applied physics letters, 2005-11, Vol.87 (19), p.192101-192101-3

2005

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First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.24.1.1-24.1.4

2019

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High insulating quality CaF2 pseudomorphic films on Si(111)

Applied physics letters, 2007-04, Vol.90 (14)

2007

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On The Contribution of Secondary Holes in Hot-Carrier Degradation - a Compact Physics Modeling Perspective

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023, p.1-3

2023

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Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures

Semiconductors (Woodbury, N.Y.), 2008-11, Vol.42 (11), p.1304-1308

2008

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Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution

Solid-state electronics, 2005-07, Vol.49 (7), p.1192-1197

2005

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Physical Modeling the Impact of Self-Heating on Hot-Carrier Degradation in pNWFETs

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2020, p.1-7

2020

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Hot-carrier degradation caused interface state profile—Simulation versus experiment

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures

Current Applied Physics, 2015, 15(2), , pp.78-83

2015

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Border Trap Based Modeling of SiC Transistor Transfer Characteristics

2018 International Integrated Reliability Workshop (IIRW), 2018, p.1-5

2018

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Soft breakdown as a cause of current drop in an MOS tunnel structure

Semiconductors (Woodbury, N.Y.), 2004-06, Vol.38 (6), p.724-726

2004

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Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.21.3.1-21.3.4

2019

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Luminescence spectra of an Al∕SiO2∕p-Si tunnel metal-oxide-semiconductor structure

Journal of applied physics, 2005-10, Vol.98 (8)

2005

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An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

Journal of applied physics, 2005-07, Vol.98 (2), p.024501-024501-5

2005

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Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer

Journal of applied physics, 2009-04, Vol.105 (8)

2009

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A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.686-694

2013

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Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness

Microelectronics and reliability, 2004-03, Vol.44 (3), p.543-546

2004

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Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-7

2019

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Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation

2012 International Electron Devices Meeting, 2012, p.30.5.1-30.5.4

2012

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Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

The impact of self-heating and its implications on hot-carrier degradation – A modeling study

Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs

Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon

A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2

Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation

High insulating quality CaF2 pseudomorphic films on Si(111)

On The Contribution of Secondary Holes in Hot-Carrier Degradation - a Compact Physics Modeling Perspective

Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures

Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution

Physical Modeling the Impact of Self-Heating on Hot-Carrier Degradation in pNWFETs

Hot-carrier degradation caused interface state profile—Simulation versus experiment

TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures

Border Trap Based Modeling of SiC Transistor Transfer Characteristics

Soft breakdown as a cause of current drop in an MOS tunnel structure

Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

Luminescence spectra of an Al∕SiO2∕p-Si tunnel metal-oxide-semiconductor structure

An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation

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