UB Paderborn / Katalog / Suche / in CDI

26 – 50 von 54

Sortiert nach

Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

IEEE transactions on magnetics, 2023-03, Vol.59 (3), p.1-6

2023

Volltextzugriff (PDF)

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf 0.5 Zr 0.5 O 2 Thin Film Capacitors

Advanced electronic materials, 2023-06, Vol.9 (6)

2023

Volltextzugriff (PDF)

Large and robust charge-to-spin conversion in sputtered conductive WTex with disorder

Matter, 2021-05, Vol.4 (5), p.1639-1653

2021

Volltextzugriff (PDF)

Ultrahigh Spin-Orbit Torque Efficiency at Spin Reorientation Transition State in Pt/Co Multilayer

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, p.1-2

2021

Volltextzugriff (PDF)

CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories

Advanced electronic materials, 2022-07, Vol.8 (7), p.n/a

2022

Volltextzugriff (PDF)

Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd 3

Nature materials, 2023-05, Vol.22 (5), p.591

2023

Volltextzugriff (PDF)

CeO 2 Doping of Hf 0.5 Zr 0.5 O 2 Thin Films for High Endurance Ferroelectric Memories

Advanced electronic materials, 2022-07, Vol.8 (7)

2022

Volltextzugriff (PDF)

Chloride Molecular Doping Technique on 2D Materials: WS 2 and MoS 2

Nano letters, 2014-11, Vol.14 (11), p.6275-6280

2014

Volltextzugriff (PDF)

Large and robust charge-to-spin conversion in sputtered conductive WTe with disorder

Matter, 2021-05, Vol.4 (5), p.1639-1653

2021

Volltextzugriff (PDF)

Chloride Molecular Doping Technique on 2D Materials: WS sub(2) and MoS sub(2)

Nano letters, 2014-01, Vol.14 (11), p.6275-6280

2014

Volltextzugriff (PDF)

Experimental demonstration of electrically-tunable bandgap on 2D black phosphorus by quantum confined stark effect

2017 Symposium on VLSI Technology, 2017, p.T48-T49

2017

Volltextzugriff (PDF)

The effects of wet surface clean and in situ interlayer on In 0.52 Al 0.48 As metal-oxide-semiconductor characteristics

Applied physics letters, 2010-04, Vol.96 (14), p.142906-142906-3

2010

Volltextzugriff (PDF)

2-Terminal, High Density, and Magnetic Field Free SOT-MRAM

2023 IEEE 34th Magnetic Recording Conference (TMRC), 2023, p.1-2

2023

Volltextzugriff (PDF)

Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2

IEEE electron device letters, 2005-07, Vol.26 (7), p.445-447

2005

Volltextzugriff (PDF)

Accelerating Deep Neural Networks in Processing-in-Memory Platforms: Analog or Digital Approach?

2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 2019, p.197-202

2019

Volltextzugriff (PDF)

Arsenic-dominated chemistry in the acid cleaning of InGaAsand InAlAs surfaces

Applied physics letters, 2008-11, Vol.93 (19), p.194103-194103-3

2008

Volltextzugriff (PDF)

Electrical characteristics of 8-Å EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1657-1668

2006

Volltextzugriff (PDF)

Band offsets of atomic-layer-deposited Al 2 O 3 on GaAs and the effects of surface treatment

Applied physics letters, 2008-08, Vol.93 (8), p.082105-082105-3

2008

Volltextzugriff (PDF)

Electron Scattering in Buried InGaAs MOSFET Channel with HfO 2 Gate Oxide

MRS proceedings, 2009, Vol.1155, Article 1155-C02-03

2009

Volltextzugriff (PDF)

Performance Benchmarking of Spin-Orbit Torque Magnetic RAM (SOT-MRAM) for Deep Neural Network (DNN) Accelerators

2022 IEEE International Memory Workshop (IMW), 2022, p.1-4

2022

Volltextzugriff (PDF)

Demonstration of L \sim \hbox\ \hbox pMOSFETs With \hbox\hbox/\hbox Channels, High I/I\ (≫ \hbox \times \hbox^) , and Controlled Short Channel Effects (SCEs)

IEEE electron device letters, 2008-09, Vol.29 (9), p.1017-1020

2008

Volltextzugriff (PDF)

Electron Scattering in Buried InGaAs MOSFET Channel with HfO2 Gate Oxide

MRS proceedings, 2009, Vol.1155 (1)

2009

Volltextzugriff (PDF)

Demonstration of Lg ∼ 55 nm pMOSFETs With Si/Si0.25Ge0.75/Si Channels, High Ion /Ioff (> 5 x 104), and Controlled Short Channel Effects (SCEs)

IEEE electron device letters, 2008, Vol.29 (9), p.1017-1020

2008

Volltextzugriff (PDF)

The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects

MRS proceedings, 2007, Vol.996

2007

Volltextzugriff (PDF)

The Electrical Characterization of Molecular-Beam-Deposited LaAlO 3 on GaAs and its Annealing Effects

MRS proceedings, 2007, Vol.996, Article 0996-H05-31

2007

Volltextzugriff (PDF)

26 – 50 von 54

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(39)
Mit Volltextzugriff
(42)

Publikationsform

Sprache

Englisch
(51)
Japanisch
(10)

Erscheinungsjahr

n.n

Thema

Science & Technology
(27)
Technology
(20)
Physical Sciences
(15)
Physics
(14)
Physics, Applied
(14)
Engineering
(11)
Engineering, Electrical & Electronic
(10)
Materials Science
(10)
Torque
(10)
Materials Science, Multidisciplinary
(8)
Transistors
(8)
Random Access Memory
(7)
Science & Technology - Other Topics
(7)
Chemistry
(6)
Magnetic Tunneling
(6)
Nanoscience & Nanotechnology
(6)
Switches
(6)
Applied Sciences
(5)
Electronics
(5)
Exact Sciences And Technology
(5)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf 0.5 Zr 0.5 O 2 Thin Film Capacitors

Large and robust charge-to-spin conversion in sputtered conductive WTex with disorder

Ultrahigh Spin-Orbit Torque Efficiency at Spin Reorientation Transition State in Pt/Co Multilayer

CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories

Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd 3

CeO 2 Doping of Hf 0.5 Zr 0.5 O 2 Thin Films for High Endurance Ferroelectric Memories

Chloride Molecular Doping Technique on 2D Materials: WS 2 and MoS 2

Large and robust charge-to-spin conversion in sputtered conductive WTe with disorder

Chloride Molecular Doping Technique on 2D Materials: WS sub(2) and MoS sub(2)

Experimental demonstration of electrically-tunable bandgap on 2D black phosphorus by quantum confined stark effect

The effects of wet surface clean and in situ interlayer on In 0.52 Al 0.48 As metal-oxide-semiconductor characteristics

2-Terminal, High Density, and Magnetic Field Free SOT-MRAM

Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2

Accelerating Deep Neural Networks in Processing-in-Memory Platforms: Analog or Digital Approach?

Arsenic-dominated chemistry in the acid cleaning of InGaAsand InAlAs surfaces

Electrical characteristics of 8-Å EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

Band offsets of atomic-layer-deposited Al 2 O 3 on GaAs and the effects of surface treatment

Electron Scattering in Buried InGaAs MOSFET Channel with HfO 2 Gate Oxide

Performance Benchmarking of Spin-Orbit Torque Magnetic RAM (SOT-MRAM) for Deep Neural Network (DNN) Accelerators

Demonstration of L \sim \hbox\ \hbox pMOSFETs With \hbox\hbox/\hbox Channels, High I/I\ (≫ \hbox \times \hbox^) , and Controlled Short Channel Effects (SCEs)

Electron Scattering in Buried InGaAs MOSFET Channel with HfO2 Gate Oxide

Demonstration of Lg ∼ 55 nm pMOSFETs With Si/Si0.25Ge0.75/Si Channels, High Ion /Ioff (> 5 x 104), and Controlled Short Channel Effects (SCEs)

The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects

The Electrical Characterization of Molecular-Beam-Deposited LaAlO 3 on GaAs and its Annealing Effects

Suchergebnisse filtern