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Efficient Visible Room Temperature Photoluminescence in Wide Gap Hydrogenated Amorphous Silicon-Carbon Alloys

MRS proceedings, 1994, Vol.336, Article 613

1994

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Temperature independent Er 3+ photoluminescence lifetime in a-Si:H and a-SiO x:H

Materials science & engineering. B, Solid-state materials for advanced technology, 2003, Vol.105 (1), p.165-168

2003

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Near infra-red photoluminescence of Nd 3+ in hydrogenated amorphous silicon sub-nitrides a-SiN x:H〈Nd

Materials science & engineering. B, Solid-state materials for advanced technology, 2003, Vol.105 (1), p.188-191

2003

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Memória e desinformação: Os ataques da extrema-direita às universidades públicas brasileiras

Relações Internacionais, 2022-03 (73), p.53-66

2022

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Erbium Environment in ZnO:Er Polycrystalline Fibers Produced by Electrospinning

MRS proceedings, 2007, Vol.1035, Article 1035-L11-24

2007

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Near infra-red photoluminescence of Nd3+ in hydrogenated amorphous silicon sub-nitrides a-SiNx:H〈Nd

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-12, Vol.105 (1-3), p.188-191

2003

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Synthesis of Silicon Nanocrystals with Erbium-Rich Surface Layers

Nano letters, 2001-07, Vol.1 (7), p.383-386

2001

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(Invited) Rare Earth Luminescence in Nanostructured Amorphous Silicon Alloys

Meeting abstracts (Electrochemical Society), 2014-04, Vol.MA2014-01 (42), p.1579-1579

Tessler, Leandro R.

2014

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Preparation and patterning of YBaCuO thin films obtained by sequential deposition of CuOx/Y2O3/BaF2

Applied physics letters, 1988-08, Vol.53 (8), p.698-699

1988

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Time-resolved photoluminescence in a-SiNx:H planar waveguides: evidence for stimulated emission

Optical materials (Amsterdam), 2005, Vol.27 (5), p.773-775

2005

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Erbium in a-Si:H

Brazilian journal of physics, 1999-12, Vol.29 (4), p.616-622

Tessler, Leandro R.

1999

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(Invited) XAFS of Rare Earth Elements in Amorphous Silicon Alloys: What Do We Know about the Local Structure?

Meeting abstracts (Electrochemical Society), 2016-04, Vol.MA2016-01 (42), p.2107-2107

2016

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Hole Localization and Interaction in 2-D Heavily Doped p-Type Germanium

Japanese Journal of Applied Physics, 1987-01, Vol.26 (S3-1), p.703

1987

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Optimization of the as-deposited 1.54 μm photoluminescence intensity in a-SiO x:H〈Er

Journal of non-crystalline solids, 2000, Vol.266, p.603-607

2000

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Tb 3+ Luminescence in a-SiN x :H

Meeting abstracts (Electrochemical Society), 2014-04, Vol.MA2014-01 (42), p.1584-1584

2014

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Sustainable cooperation with Brazil

Internationalisation of higher education, 2016, Vol.4 (2), p.1-14

2016

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Southern Cone Countries: Global Engagement Beyond the United States

Global Opportunities and Challenges for Higher Education Leaders, 2014, p.239-242

2014

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Southern cone countries: Global engagement beyond the United States

Global opportunities and challenges for higher education leaders. Briefs on key themes, 2014, p.S. 239-242

Tessler, Leandro R

2014

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The internationalisation of higher education in Brasil

Going global. The landscape for policy makers and practitioners in tertiary education, 2012, p.S. 189-196

Tessler, Leandro R

2012

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Comment on `Monte Carlo simulations of the recombination dynamics in porous silicon

Journal of physics. Condensed matter, 1998-02, Vol.10 (6), p.1447-1448

1998

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Combinatorial Approach to Thin-Film Silicon Materials and Devices

MRS proceedings, 2003, Vol.762, Article A9.1

2003

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Low cost data acquisition system for transport characterization of high‐T c superconductors

Review of scientific instruments, 1990-02, Vol.61 (2), p.919-921

Tessler, Leandro R.

1990

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Optimization of the as-deposited 1.54 μm photoluminescence intensity in a-SiOx : H

Journal of non-crystalline solids, 2000, Vol.266-69, p.603-607

2000

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Time-Resolved Photoluminescence in a-Si 1-x C x :H

MRS proceedings, 1996, Vol.420, Article 783

1996

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Photo and Electroluminescence of a-Si:Er:H

MRS proceedings, 1998, Vol.507, Article 279

1998

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Efficient Visible Room Temperature Photoluminescence in Wide Gap Hydrogenated Amorphous Silicon-Carbon Alloys

Temperature independent Er 3+ photoluminescence lifetime in a-Si:H and a-SiO x:H

Near infra-red photoluminescence of Nd 3+ in hydrogenated amorphous silicon sub-nitrides a-SiN x:H〈Nd

Memória e desinformação: Os ataques da extrema-direita às universidades públicas brasileiras

Erbium Environment in ZnO:Er Polycrystalline Fibers Produced by Electrospinning

Near infra-red photoluminescence of Nd3+ in hydrogenated amorphous silicon sub-nitrides a-SiNx:H〈Nd

Synthesis of Silicon Nanocrystals with Erbium-Rich Surface Layers

(Invited) Rare Earth Luminescence in Nanostructured Amorphous Silicon Alloys

Preparation and patterning of YBaCuO thin films obtained by sequential deposition of CuOx/Y2O3/BaF2

Time-resolved photoluminescence in a-SiNx:H planar waveguides: evidence for stimulated emission

Erbium in a-Si:H

(Invited) XAFS of Rare Earth Elements in Amorphous Silicon Alloys: What Do We Know about the Local Structure?

Hole Localization and Interaction in 2-D Heavily Doped p-Type Germanium

Optimization of the as-deposited 1.54 μm photoluminescence intensity in a-SiO x:H〈Er

Tb 3+ Luminescence in a-SiN x :H

Sustainable cooperation with Brazil

Southern Cone Countries: Global Engagement Beyond the United States

Southern cone countries: Global engagement beyond the United States

The internationalisation of higher education in Brasil

Comment on `Monte Carlo simulations of the recombination dynamics in porous silicon

Combinatorial Approach to Thin-Film Silicon Materials and Devices

Low cost data acquisition system for transport characterization of high‐T c superconductors

Optimization of the as-deposited 1.54 μm photoluminescence intensity in a-SiOx : H

Time-Resolved Photoluminescence in a-Si 1-x C x :H

Photo and Electroluminescence of a-Si:Er:H

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