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PREPARATION OF SrBi2Ta1.5Nb0.5O9 FERROELECTRIC THIN FILMS BY RF SPUTTERING ON LARGE SUBSTRATE

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9B, pp. 5460-5464. 2000, 2000, Vol.39 (9B), p.5460-5464

2000

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High-density packaging technology solution for Smart ICT

2016 Pan Pacific Microelectronics Symposium (Pan Pacific), 2016, p.1-6

Suu, Koukou

2016

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Preparation of (Pb, La) (Zr, Ti)O3 ferroelectric films by RF sputtering on large substrate

Japanese journal of applied physics, 1996, Vol.35 (9B), p.4967-4971

1996

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Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF3 into N2 Downflow Plasma

Jpn J Appl Phys, 2012-02, Vol.51 (2), p.026505-026505-5

2012

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Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF 3 into N 2 Downflow Plasma

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2R), p.26505

2012

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Quantum Chemical Investigation for Chemical Dry Etching of SiO 2 by Flowing NF 3 into H 2 Downflow Plasma

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1R), p.16201

2012

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Forming-free Resistance Random Access Memory Using Ta 2 O 5 /TaO x Bi-layer Prepared by Magnetron Sputtering Method

MRS proceedings, 2012, Vol.1430, Article mrss12-1430-e03-16

2012

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Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

MRS proceedings, 2012, Vol.1430 (1), p.100-105

2012

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Improved Step Coverage of Cu Seed Layers by Magnetic-Field-Assisted Ionized Sputtering

Japanese Journal of Applied Physics, 2011-05, Vol.50 (5S1), p.5

2011

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Dissociation Channels of c-C 4 F 8 to CF 2 Radical in Reactive Plasma

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3R), p.36203

2011

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Dissociation Channels of c-C 4 F 8 to CF 2 Radical in Reactive Plasma

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3R), p.36203

2011

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Measurement of Negative Ions Generated on the Si Etched Surface

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8), p.08KB01-08KB01-4

2011

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Preparation of SrBi2Ta2O9 ferroelectric thin film by rf magnetron sputtering

Integrated ferroelectrics, 1998-09, Vol.21 (1-4), p.407-418

1998

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Electrical Properties of TaO x Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method

MRS proceedings, 2010, Vol.1250, Article 1250-G12-12

2010

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Electrical Properties of TaOx Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method

MRS proceedings, 2010, Vol.1250 (1)

2010

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ArF resist-friendly etching technology

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-09, Vol.26 (5), p.1775-1781

2008

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Dry Etching Process for Pb(Zr,Ti)O 3 Thin-Film Actuators

Japanese Journal of Applied Physics, 2007-01, Vol.46 (1R), p.280

2007

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Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device

Japanese Journal of Applied Physics, 2008-08, Vol.47 (8S2), p.6931

2008

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Electroactive Nanoinjection Platform for Intracellular Delivery and Genetic Editing

SSRN Electronic Journal, 2023

2023

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Preparation of Ge2Sb2Te5 Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Patterns

MRS proceedings, 2007, Vol.997

2007

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Thin-Film Processing Technologies of Piezoelectric Materials for IoT/IoE Applications

2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS), 2020, p.550-553

2020

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Preparation of Ge 2 Sb 2 Te 5 Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Patterns

MRS proceedings, 2007, Vol.997, Article 0997-I12-02

2007

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TaOx-based ReRAM stack with NbOx-based selector for 3D cross-point ReRAM application

2014 Silicon Nanoelectronics Workshop (SNW), 2014, p.1-2

2014

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Preparation of Ge2Sb2Te5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

MRS proceedings, 2006, Vol.918

2006

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Preparation of Ge 2 Sb 2 Te 5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

MRS proceedings, 2006, Vol.918, Article 0918-H07-10-G08-10

2006

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PREPARATION OF SrBi2Ta1.5Nb0.5O9 FERROELECTRIC THIN FILMS BY RF SPUTTERING ON LARGE SUBSTRATE

High-density packaging technology solution for Smart ICT

Preparation of (Pb, La) (Zr, Ti)O3 ferroelectric films by RF sputtering on large substrate

Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF3 into N2 Downflow Plasma

Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF 3 into N 2 Downflow Plasma

Quantum Chemical Investigation for Chemical Dry Etching of SiO 2 by Flowing NF 3 into H 2 Downflow Plasma

Forming-free Resistance Random Access Memory Using Ta 2 O 5 /TaO x Bi-layer Prepared by Magnetron Sputtering Method

Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

Improved Step Coverage of Cu Seed Layers by Magnetic-Field-Assisted Ionized Sputtering

Dissociation Channels of c-C 4 F 8 to CF 2 Radical in Reactive Plasma

Dissociation Channels of c-C 4 F 8 to CF 2 Radical in Reactive Plasma

Measurement of Negative Ions Generated on the Si Etched Surface

Preparation of SrBi2Ta2O9 ferroelectric thin film by rf magnetron sputtering

Electrical Properties of TaO x Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method

Electrical Properties of TaOx Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method

ArF resist-friendly etching technology

Dry Etching Process for Pb(Zr,Ti)O 3 Thin-Film Actuators

Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device

Electroactive Nanoinjection Platform for Intracellular Delivery and Genetic Editing

Preparation of Ge2Sb2Te5 Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Patterns

Thin-Film Processing Technologies of Piezoelectric Materials for IoT/IoE Applications

Preparation of Ge 2 Sb 2 Te 5 Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Patterns

TaOx-based ReRAM stack with NbOx-based selector for 3D cross-point ReRAM application

Preparation of Ge2Sb2Te5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

Preparation of Ge 2 Sb 2 Te 5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

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