UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Electrical and microstructural investigation of polysilicon emitter contacts for high-performance bipolar VLSI

IBM journal of research and development, 1987-11, Vol.31 (6), p.617-626

1987

Volltextzugriff (PDF)

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

IEEE electron device letters, 1993-02, Vol.14 (2), p.69-71

1993

Volltextzugriff (PDF)

Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology

IEEE electron device letters, 1990-07, Vol.11 (7), p.288-290

1990

Volltextzugriff (PDF)

Correlation between the diffusive and electrical barrier properties of the interface in polysilicon contacted n+-p junctions

IEEE transactions on electron devices, 1985-09, Vol.32 (9), p.1766-1770

1985

Volltextzugriff (PDF)

Si Ge alloys: growth, properties and applications

Applied surface science, 1991-05, Vol.48, p.377-386

1991

Volltextzugriff (PDF)

On the leverage of high-fT transistors for advanced high-speed bipolar circuits

IEEE journal of solid-state circuits, 1992-02, Vol.27 (2), p.225-228

1992

Volltextzugriff (PDF)

Low-temperature operation of SiGe p-n-p HBTs

IEEE transactions on electron devices, 1992-11, Vol.39 (11), p.2638-2639

1992

Volltextzugriff (PDF)

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

IEEE transactions on electron devices, 1993-03, Vol.40 (3), p.525-541

1993

Volltextzugriff (PDF)

Current grain rolloff in graded-base SiGe heterojunction bipolar transistors

IEEE electron device letters, 1993, Vol.14 (4), p.193-195

1993

Volltextzugriff (PDF)

Extension of impact-ionization multiplication coefficient measurements to high electric field in advanced Si BJT's

IEEE electron device letters, 1993, Vol.14 (2), p.69-71

1993

Volltextzugriff (PDF)

Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.531-534

1992

Volltextzugriff (PDF)

On the leverage of high- < e1 > f < /e1 > (T) transistors foradvanced high-speed bipolar circuits

IEEE journal of solid-state circuits, 1992-02, Vol.27 (2), p.225-228

1992

Volltextzugriff (PDF)

On the profile design and optimization of epitaxial Si-andSiGe-base bipolar technology for 77 K applications. I. Transistor DCdesign considerations

IEEE transactions on electron devices, 1993-03, Vol.40 (3), p.525-541

1993

Volltextzugriff (PDF)

Small geometry depleted base bipolar transistors (BSIT)-VLSI devices?

IEEE transactions on electron devices, 1981-11, Vol.28 (11), p.1354-1363

1981

Volltextzugriff (PDF)

Small geometry depleted base bipolar transistors /BSIT/-VLSI devices

IEEE transactions on electron devices, 1981-11, Vol.ED-28, p.1354-1363

1981

Volltextzugriff (PDF)

Narrow band gap base heterojunction bipolar transistors using SiGe alloys

Thin solid films, 1990, Vol.184 (1), p.153-162

1990

Volltextzugriff (PDF)

Correlation between the diffusive and electrical barrier properties of the interface in polysilicon contacted n super(+)-p junctions

IEEE transactions on electron devices, 1985-01, Vol.ED-32 (9), p.1766-1770

1985

Volltextzugriff (PDF)

Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base

Microelectronic engineering, 1991-10, Vol.15 (1-4), p.11-14

1991

Volltextzugriff (PDF)

High-mobility modulation-doped SiGe-channel p-MOSFETs

IEEE electron device letters, 1991-08, Vol.12 (8), p.447-449

1991

Volltextzugriff (PDF)

VIB-6 measurement of submicron potential barriers in depleted base transistors

IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1262-1263

1981

Volltextzugriff (PDF)

75-GHz < e1 > f < /e1 > (T) SiGe-base heterojunction bipolartransistors

IEEE electron device letters, 1990-04, Vol.11 (4), p.171-173

1990

Volltextzugriff (PDF)

Complementary activities of DOT1L and Menin inhibitors in MLL-rearranged leukemia

Leukemia, 2017-06, Vol.31 (6), p.1269-1277

2017

Volltextzugriff (PDF)

TA-A7 modeling of small-geometry depleted-base bipolar structures

IEEE transactions on electron devices, 1980-11, Vol.27 (11), p.2184-2185

1980

Volltextzugriff (PDF)

75-GHz f sub(T) SiGe-base heterojunction bipolar transistors

IEEE electron device letters, 1990-01, Vol.11 (4), p.171-173

1990

Volltextzugriff (PDF)

Polysilicon Emitter Resistance and Carrier Transport Studies

1985 Symposium on VLSI Technology. Digest of Technical Papers, 1985, p.44-45

1985

Volltextzugriff (PDF)

26 – 50 von 469

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(396)
Mit Volltextzugriff
(361)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(265)
Life Sciences & Biomedicine
(146)
Humans
(121)
Male
(84)
Female
(83)
Physical Sciences
(79)
Physics
(78)
Technology
(65)
Exact Sciences And Technology
(59)
Biological And Medical Sciences
(50)
Middle Aged
(46)
Animals
(43)
Medical Sciences
(41)
Adult
(39)
Applied Sciences
(38)
Engineering
(38)
Engineering, Electrical & Electronic
(37)
Aged
(36)
Electronics
(32)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(31)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Electrical and microstructural investigation of polysilicon emitter contacts for high-performance bipolar VLSI

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology

Correlation between the diffusive and electrical barrier properties of the interface in polysilicon contacted n+-p junctions

Si Ge alloys: growth, properties and applications

On the leverage of high-fT transistors for advanced high-speed bipolar circuits

Low-temperature operation of SiGe p-n-p HBTs

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

Current grain rolloff in graded-base SiGe heterojunction bipolar transistors

Extension of impact-ionization multiplication coefficient measurements to high electric field in advanced Si BJT's

Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique

On the leverage of high- < e1 > f < /e1 > (T) transistors foradvanced high-speed bipolar circuits

On the profile design and optimization of epitaxial Si-andSiGe-base bipolar technology for 77 K applications. I. Transistor DCdesign considerations

Small geometry depleted base bipolar transistors (BSIT)-VLSI devices?

Small geometry depleted base bipolar transistors /BSIT/-VLSI devices

Narrow band gap base heterojunction bipolar transistors using SiGe alloys

Correlation between the diffusive and electrical barrier properties of the interface in polysilicon contacted n super(+)-p junctions

Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base

High-mobility modulation-doped SiGe-channel p-MOSFETs

VIB-6 measurement of submicron potential barriers in depleted base transistors

75-GHz < e1 > f < /e1 > (T) SiGe-base heterojunction bipolartransistors

Complementary activities of DOT1L and Menin inhibitors in MLL-rearranged leukemia

TA-A7 modeling of small-geometry depleted-base bipolar structures

75-GHz f sub(T) SiGe-base heterojunction bipolar transistors

Polysilicon Emitter Resistance and Carrier Transport Studies

Suchergebnisse filtern