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Reactively sputtered In sub(x)V sub(y)O sub(z) films for detection of NO sub(x), D sub(2), and O sub(2)

Sensors and actuators. B, Chemical, 2007-05, Vol.123 (2), p.779-783

2007

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Reactively sputtered In x V y O z films for detection of NO x , D 2, and O 2

Sensors and actuators. B, Chemical, 2007, Vol.123 (2), p.779-783

2007

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Atomic layer epitaxy of (Si(1-x)C(1-y))Ge(x+y) layers on 4H-SiC

Materials science forum, 2006-01, Vol.527-529, p.1559-1562

2006

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Ge-modified Si(100) substrates for the growth of 3 C - Si C ( 100 )

Applied physics letters, 2006-05, Vol.88 (21), p.211909-211909-3

2006

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Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC

Materials science forum, 2006, Vol.527-529, p.1559-1562

2006

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Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities

Surface and interface analysis, 2006-04, Vol.38 (4), p.444-447

2006

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Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy

Materials Science Forum, 2005-05, Vol.483-485, p.173-176

2005

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In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)

Materials science forum, 2002-04, Vol.389-393, p.725-728

2002

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Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.545-549

2005

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Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

Materials science forum, 2006-10, Vol.527-529, p.295-298

2006

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Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling

Bulletin of the Russian Academy of Sciences. Physics, 2010-02, Vol.74 (2), p.241-244

2010

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Simulation of quality of SiC/Si interface during MBE deposition of C on Si

Materialwissenschaft und Werkstofftechnik, 2006-11, Vol.37 (11), p.929-932

2006

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Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

Materials Science Forum, 2005-05, Vol.483-485, p.213-216

2005

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Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts

Materials science forum, 2006-10, Vol.527-529, p.275-278

2006

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High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates

Materials science forum, 2003-09, Vol.433-436, p.233-236

2003

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Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE

Materials science forum, 2004-01, Vol.457-460, p.293-296

2004

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Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)

Materials science forum, 2004-01, Vol.457-460, p.297-300

2004

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The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

Materials science forum, 2000-05, Vol.338-342, p.289-292

2000

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In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces

Materials science forum, 2000-05, Vol.338-342, p.281-284

2000

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A new type of highly sensitive portable ozone sensor operating at room temperature

2006 5th IEEE Conference on Sensors, 2006, p.81-84

2006

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Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces

Thin solid films, 2000-03, Vol.364 (1-2), p.28-32

2000

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Silicon Carbide Buffer Layers for Nitride Growth on Si

Materials science forum, 2002-04, Vol.389-393, p.1485-1488

2002

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In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces

Materials science forum, 2001-01, Vol.353-356, p.187-190

2001

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Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)

Materials science forum, 2001-01, Vol.353-356, p.179-182

2001

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Chemical conversion of Si to SiC by solid source MBE and RTCVD

Diamond and related materials, 1997-08, Vol.6 (10), p.1311-1315

1997

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Reactively sputtered In sub(x)V sub(y)O sub(z) films for detection of NO sub(x), D sub(2), and O sub(2)

Reactively sputtered In x V y O z films for detection of NO x , D 2, and O 2

Atomic layer epitaxy of (Si(1-x)C(1-y))Ge(x+y) layers on 4H-SiC

Ge-modified Si(100) substrates for the growth of 3 C - Si C ( 100 )

Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities

Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy

In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)

Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions

Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling

Simulation of quality of SiC/Si interface during MBE deposition of C on Si

Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts

High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates

Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE

Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)

The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces

A new type of highly sensitive portable ozone sensor operating at room temperature

Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces

Silicon Carbide Buffer Layers for Nitride Growth on Si

In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces

Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)

Chemical conversion of Si to SiC by solid source MBE and RTCVD

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