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Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs : hopping in a dense EL2-like band

Physical review. B, Condensed matter, 1990-08, Vol.42 (6), p.3578-3581

1990

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Accurate measurement of capture cross sections in deep level transient spectroscopy : application to EL2 in GaAs

Journal of electronic materials, 1995-10, Vol.24 (10), p.1461-1464

1995

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Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200°C

Journal of applied physics, 1992-06, Vol.71 (12), p.5981-5984

1992

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Equivalence of donor and acceptor fits of temperature-dependent carrier-concentration data

Journal of applied physics, 1987-02, Vol.61 (4), p.1650-1652

1987

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A study of the transition from high to low resistivity in As-grown GaAs MBE material

Journal of electronic materials, 1995, Vol.24 (1), p.31-34

1995

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Electrical properties of molecular beam epitaxial GaAs grown at 300–450°C

Journal of electronic materials, 1993-12, Vol.22 (12), p.1425-1428

1993

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0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures

Physical review. B, Condensed matter, 1994-02, Vol.49 (7), p.4689-4694

1994

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Deep level near E(C) - 0.55 ev in undoped 4H-SiC substrates

Materials science forum, 2006-01, Vol.527-529, p.505-508

2006

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Defect nature of the 0.4-eV center in O-doped GaAs

Applied physics letters, 1983-05, Vol.42 (9), p.829-831

1983

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Depletion width and capacitance transient formulas for deep traps of high concentration

Journal of applied physics, 1995-08, Vol.78 (4), p.2848-2850

1995

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Reversible electrical properties of LEC GaAs

Journal of electronic materials, 1987, Vol.16 (1), p.63-67

1987

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Electrical, Optical, Structural, and Analytical Properties of Very Pure GaN

MRS proceedings, 2002, Vol.743, Article L10.1

2002

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Convenient determination of concentration and energy in deep-level transient spectroscopy

Journal of applied physics, 1995-02, Vol.77 (4), p.1407-1410

1995

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Depletion approximation in semiconductor trap filling analysis: Application to EL2 in GaAs

Solid-state electronics, 1996-09, Vol.39 (9), p.1398-1400

1996

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Recovery of quenched hopping conduction in GaAs layers grown by molecular-beam epitaxy at 200°C

Physical review. B, Condensed matter, 1993, Vol.47 (3), p.1441-1443

1993

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The path to ZnO devices: donor and acceptor dynamics

Physica status solidi. C, 2003-01 (3), p.171-177

2003

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Electrical properties of molecular beam epitaxial GaAs grown at 300-450 degrees C

Journal of electronic materials, 1993-12, Vol.22 (12), p.1425-1428

1993

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Observation of a metastable defect transition in GaAs

Physical review. B, Condensed matter, 1994-06, Vol.49 (23), p.16757-16760

1994

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Nondestructive mapping of carrier concentration and dislocation density in n +-type GaAs

Applied physics letters, 1994-10, Vol.65 (17), p.2188-2190

1994

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Photoluminescence of Ga As -related 1.32 eV emission in bulk GaAs

Semiconductor science and technology, 1992-04, Vol.7 (4), p.556-561

1992

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New As Ga related center in GaAs

Physical review letters, 1993-01, Vol.70 (4), p.465-468

1993

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New As sub / Ga /-related center in GaAs

Physical review letters, 1993-01, Vol.70 (4), p.465-468

1993

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New As(Ga) related center in GaAs

Physical review letters, 1993-01

1993

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Equivalence of donor and acceptor fits of temperature-dependent carrier-concwentration data

Journal of applied physics, 1987, Vol.61 (4), p.1650-1652

1987

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Electrical properties of molecular beam epitaxial GaAs grown at 300-450 degree C

Journal of electronic materials, 1993-01, Vol.22 (12), p.1425-1428

1993

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Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs : hopping in a dense EL2-like band

Accurate measurement of capture cross sections in deep level transient spectroscopy : application to EL2 in GaAs

Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200°C

Equivalence of donor and acceptor fits of temperature-dependent carrier-concentration data

A study of the transition from high to low resistivity in As-grown GaAs MBE material

Electrical properties of molecular beam epitaxial GaAs grown at 300–450°C

0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures

Deep level near E(C) - 0.55 ev in undoped 4H-SiC substrates

Defect nature of the 0.4-eV center in O-doped GaAs

Depletion width and capacitance transient formulas for deep traps of high concentration

Reversible electrical properties of LEC GaAs

Electrical, Optical, Structural, and Analytical Properties of Very Pure GaN

Convenient determination of concentration and energy in deep-level transient spectroscopy

Depletion approximation in semiconductor trap filling analysis: Application to EL2 in GaAs

Recovery of quenched hopping conduction in GaAs layers grown by molecular-beam epitaxy at 200°C

The path to ZnO devices: donor and acceptor dynamics

Electrical properties of molecular beam epitaxial GaAs grown at 300-450 degrees C

Observation of a metastable defect transition in GaAs

Nondestructive mapping of carrier concentration and dislocation density in n +-type GaAs

Photoluminescence of Ga As -related 1.32 eV emission in bulk GaAs

New As Ga related center in GaAs

New As sub / Ga /-related center in GaAs

New As(Ga) related center in GaAs

Equivalence of donor and acceptor fits of temperature-dependent carrier-concwentration data

Electrical properties of molecular beam epitaxial GaAs grown at 300-450 degree C

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