UB Paderborn / Katalog / Suche / in CDI

O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.272-275

2009

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Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

2008 Symposium on VLSI Technology, 2008, p.186-187

2008

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pMOSFET With 200%25 Mobility Enhancement Induced by Multiple Stressors

IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

2006

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Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

Materials science & engineering. B, Solid-state materials for advanced technology, 1990-09, Vol.7 (1), p.149-165

1990

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Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Microelectronic engineering, 1992-09, Vol.19 (1-4), p.665-668

1992

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In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Applied physics letters, 1992-11, Vol.61 (19), p.2296-2298

1992

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Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

2007 IEEE International Electron Devices Meeting, 2007, p.955-958

2007

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Channeling implantation of B and P in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.615-619

1991

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Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990-03, Vol.48 (1-4), p.448-452

1990

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The role of extended defects on transient boron diffusion in ion-implanted silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-02, Vol.12 (4), p.307-325

1992

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A systematic study of trade-offs in engineering a locally strained pMOSFET

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.1055-1058

2004

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Channeled implantation with a parallel scanned ion beam

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-02, Vol.37, p.357-360

1989

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Deep implants by channeling implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 1989-02, Vol.2 (1), p.139-143

1989

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Pre-amorphization damage in ion-implanted silicon

Materials science reports, 1991-08, Vol.6 (7), p.275-366

1991

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An MeV facility for materials research

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-02, Vol.37, p.935-940

1989

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Pre-amorphization damage in Si(100) implanted with high mass MeV ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-01, Vol.62 (3), p.372-376

1992

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Reduction of secondary defect formation in MeV As ion implanted Si(100)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.614-618

1991

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Determination of the density of states in amorphous silicon from thermostimulated conductivity measurements

Journal of non-crystalline solids, 1987-12, Vol.97, p.711-714

1987

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High and Hyper NA Immersion Lithography using Advanced Patterning Film APF TM

The 17th Annual SEMI/IEEE ASMC 2006 Conference, 2006, p.39-43

2006

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Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics

MRS proceedings, 2004, Vol.811, Article D2.10

2004

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Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.17.5.1-17.5.4

2016

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Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Thermal stability of CoSi sub(2) on submicron polycrystalline silicon lines

Microelectronic engineering, 1992-01, Vol.19 (1-4), p.665-668

1992

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Technological aspects of epitaxial CoSi sub(2) layers for CMOS

Applied surface science, 1993-01, Vol.73, p.19-24

1993

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Secondary defect reduction by channeling implantation of B and P in 〈100〉 silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.1056-1060

1991

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O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

pMOSFET With 200%25 Mobility Enhancement Induced by Multiple Stressors

Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Channeling implantation of B and P in silicon

Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

The role of extended defects on transient boron diffusion in ion-implanted silicon

A systematic study of trade-offs in engineering a locally strained pMOSFET

Channeled implantation with a parallel scanned ion beam

Deep implants by channeling implantation

Pre-amorphization damage in ion-implanted silicon

An MeV facility for materials research

Pre-amorphization damage in Si(100) implanted with high mass MeV ions

Reduction of secondary defect formation in MeV As ion implanted Si(100)

Determination of the density of states in amorphous silicon from thermostimulated conductivity measurements

High and Hyper NA Immersion Lithography using Advanced Patterning Film APF TM

Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics

Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology

Thermal stability of CoSi sub(2) on submicron polycrystalline silicon lines

Technological aspects of epitaxial CoSi sub(2) layers for CMOS

Secondary defect reduction by channeling implantation of B and P in 〈100〉 silicon

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