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Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

IEEE transactions on circuits and systems. I, Regular papers, 2009-05, Vol.56 (5), p.920-932

2009

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Modeling 1/f and Lorenzian noise in III-V MOSFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation

Journal of instrumentation, 2017-11, Vol.12 (11), p.C11017-C11017, Article C11017

2017

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An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations

Semiconductor science and technology, 2010-05, Vol.25 (5), p.055011-055011

2010

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Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2081-2091

2009

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Compact modeling of thermal resistance in bipolar transistors on bulk and SOI substrates

IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.1027-1033

2002

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Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.1-4

2020

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Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), 2020, p.1-6

2020

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Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1843-1851

2007

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Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach

Solid-state electronics, 2022-06, Vol.192, p.108295, Article 108295

2022

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A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2164-2173

2007

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Digital and analog TFET circuits: Design and benchmark

Solid-state electronics, 2018-08, Vol.146, p.50-65

2018

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LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology

IEEE transactions on circuits and systems. II, Express briefs, 2011-08, Vol.58 (8), p.467-471

2011

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Modeling, design and characterization of a new low-jitter analog dual tuning LC-VCO PLL architecture

IEEE journal of solid-state circuits, 2005-06, Vol.40 (6), p.1303-1309

2005

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Relationship between capacitance and conductance in MOS capacitors

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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Modeling and optimization of graphene ballistic rectifiers

Solid-state electronics, 2022-08, Vol.194, p.108314, Article 108314

2022

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An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

Solid-state electronics, 2005-05, Vol.49 (5), p.727-732

2005

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Effect of the gap size on the SSI efficiency of split-gate memory cells

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.488-493

2006

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Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1433-1442

2006

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New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.XT.1.1-XT.1.5

2013

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Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study

Solid-state electronics, 2009-07, Vol.53 (7), p.706-711

2009

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Closed- and open-boundary models for gate-current calculation in n-MOSFETs

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1811-1815

2001

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Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1443-1451

2006

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Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K

Solid-state electronics, 2024-05, Vol.215, p.108881, Article 108881

2024

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Comprehensive Behavioral Modeling of Conventional and Dual-Tuning PLLs

IEEE transactions on circuits and systems. I, Regular papers, 2008-07, Vol.55 (6), p.1628-1638

2008

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Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

Modeling 1/f and Lorenzian noise in III-V MOSFETs

Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation

An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations

Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach

Compact modeling of thermal resistance in bipolar transistors on bulk and SOI substrates

Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?

Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes

Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach

A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

Digital and analog TFET circuits: Design and benchmark

LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology

Modeling, design and characterization of a new low-jitter analog dual tuning LC-VCO PLL architecture

Relationship between capacitance and conductance in MOS capacitors

Modeling and optimization of graphene ballistic rectifiers

An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

Effect of the gap size on the SSI efficiency of split-gate memory cells

Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme

New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study

Closed- and open-boundary models for gate-current calculation in n-MOSFETs

Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations

Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K

Comprehensive Behavioral Modeling of Conventional and Dual-Tuning PLLs

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