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Deep states in silicon δ-doped GaAs

Semiconductors (Woodbury, N.Y.), 1998-06, Vol.32 (6), p.659-664

1998

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Diagnostics of cap layers in InAs(N) quantum-dot multilayer structures on GaAs(001), grown by metal-organic vapor-phase epitaxy

Bulletin of the Russian Academy of Sciences. Physics, 2007-01, Vol.71 (1), p.103-105

2007

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Simple method for reconstructing the doping fine structure in semiconductors from C–V measurements in an electrolytic cell

Semiconductors (Woodbury, N.Y.), 1997-08, Vol.31 (8), p.789-792

1997

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InGaAsN/GaAs QD and QW structures grown by MOVPE

Journal of crystal growth, 2003-02, Vol.248, p.343-347

2003

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Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

IEEE transactions on electron devices, 2011, Vol.58 (8), p.2507-2510

2011

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Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.11

Pryakhin, D. A.

2005

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Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.634-635

2003

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Electrical activation of carbon in GaAs: Implantation temperature effects

Applied physics letters, 2001-03, Vol.78 (12), p.1700-1702

2001

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Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1470-1474

2013

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Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1358-1361

2012

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Electrical isolation of a silicon δ-doped layer in GaAs by ion irradiation

Applied physics letters, 1999-09, Vol.75 (13), p.1917-1919

1999

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Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.14

Khrykin, O. I.

2005

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InGaAs∕GaAs Quantum Dot Heterostructures for 3–5 μm IR Detectors

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.86

Antonov, A. V.

2005

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A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.82

Vostokov, N. V.

2005

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Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.8

Danil’tsev, V. M.

2005

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Comparative analysis of microwave low-barrier Mott and Schottky detector diodes

2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010, p.829-830

2010

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Diagnostics of low-barrier Schottky diodes with near-surface {delta}-doping

Semiconductors (Woodbury, N.Y.), 2008-04, Vol.42 (4)

2008

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Porous gallium arsenide with arsenic clusters

Technical physics, 2000-01, Vol.45 (5), p.650-652

2000

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Photoluminescence up to 1.6 {mu}m of quantum dots with an increased effective thickness of the InAs layer

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3)

2008

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Photoluminescence up to 1.6 {mu}m of quantum dots with an increased effective thickness of the InAs layer

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3)

2008

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Detectors with low-barrier Mott diodes for millimeter-wave imaging arrays

2013 23rd International Crimean Conference "Microwave & Telecommunication Technology", 2013, p.738-739

2013

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Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 {mu}m

Semiconductors (Woodbury, N.Y.), 2006-04, Vol.40 (4)

2006

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Modeling of profiles of the carrier distribution in low-high junctions with an intermediate layer with opposite type of doping

Semiconductors (Woodbury, N.Y.), 1993-10, Vol.27 (10), p.916-917

1993

Volltextzugriff (PDF)

Automated system for the measurement of diode detector parameters in millimetre wavelength range

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487), 2001, p.592-593

2001

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GaAs FET with a sub-surface delta-doped channel

2012 22nd International Crimean Conference "Microwave & Telecommunication Technology", 2012, p.733-734

2012

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Deep states in silicon δ-doped GaAs

Diagnostics of cap layers in InAs(N) quantum-dot multilayer structures on GaAs(001), grown by metal-organic vapor-phase epitaxy

Simple method for reconstructing the doping fine structure in semiconductors from C–V measurements in an electrolytic cell

InGaAsN/GaAs QD and QW structures grown by MOVPE

Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy

Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

Electrical activation of carbon in GaAs: Implantation temperature effects

Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers

Electrical isolation of a silicon δ-doped layer in GaAs by ion irradiation

Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor

InGaAs∕GaAs Quantum Dot Heterostructures for 3–5 μm IR Detectors

A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix

Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films

Comparative analysis of microwave low-barrier Mott and Schottky detector diodes

Diagnostics of low-barrier Schottky diodes with near-surface {delta}-doping

Porous gallium arsenide with arsenic clusters

Photoluminescence up to 1.6 {mu}m of quantum dots with an increased effective thickness of the InAs layer

Photoluminescence up to 1.6 {mu}m of quantum dots with an increased effective thickness of the InAs layer

Detectors with low-barrier Mott diodes for millimeter-wave imaging arrays

Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 {mu}m

Modeling of profiles of the carrier distribution in low-high junctions with an intermediate layer with opposite type of doping

Automated system for the measurement of diode detector parameters in millimetre wavelength range

GaAs FET with a sub-surface delta-doped channel

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