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Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Materials science forum, 2006-10, Vol.527-529, p.371-374

2006

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Characterization of high fluence irradiations on advanced triple junction solar cells

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2797-2800

2013

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Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.001753-001758

2010

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Thin GaAs Solar Cells For High Irradiation Levels

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, p.2814-2817

2019

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Crystallinity Control in Low-Temperature Growth of Poly-Crystalline Ge by Ion Beam Deposition

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.845-848

2017

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Low temperature growth of Germanium buffer films by ion beam sputter process

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.1919-1922

2016

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Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga 2 O 3 Nanowires

Nano letters, 2009-09, Vol.9 (9), p.3245-3251

2009

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Effect of threading screw and edge dislocations on transport propertiesof 4H-SiC homoepitaxial layers

Journal of applied physics, 2010-07, Vol.108 (1), p.013708-013708-6

2010

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High-temperature (450°C) operation of InGaP solar cell under N2 ambient using refractory metal contacts

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.2337-2340

2016

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High band gap solar cells for underwater Photovoltaic applications

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.002061-002064

2012

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Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2009, Vol.38 (4), p.551-556

2009

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Optimization of electrical performance of Cu(In,Ga)Se2 thin film solar cells sputtered from quaternary targets

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.1704-1706

2014

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Observation of dislocations in diffused 4H-SiC p - i - n diodesby electron-beam induced current

Journal of applied physics, 2004-12, Vol.97 (1), p.013533-013533-6

2004

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Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-ray Topography

Materials science forum, 2009-01, Vol.600-603

2009

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Effect of irradiation on gallium arsenide solar cells with multi quantum well structures

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.2144-2148

2014

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Radiation study in quantum well III-V multi-junction solar cells

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.3233-3236

2013

Volltextzugriff (PDF)

Investigation of the electrical activity of partial dislocations in SiC p - i - n diodes

Applied physics letters, 2005-07, Vol.87 (3), p.033503-033503-3

2005

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Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

Materials science forum, 2006-10, Vol.527-529, p.427-430

2006

Volltextzugriff (PDF)

Understanding defects in type-II superlattice IR photodiodes

2010 23rd Annual Meeting of the IEEE Photonics Society, 2010, p.636-636

2010

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Effect of crystal defects on reverse I-V characteristics of 4H-SiCAPDs

Materials science forum, 2006-01, Vol.527-529, p.427-430

2006

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Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B

Materials Science Forum, 2005-05, Vol.483-485, p.989-992

2005

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Absorber Considerations for H-3 Betavoltaic Devices

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018, p.0624-0627

2018

Volltextzugriff (PDF)

Polarization characteristics of surface plasmon resonance in SnO2 nanocluster films

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1467-1473

2011

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Polarization characteristics of surface plasmon resonance in SnO{sub 2} nanocluster films

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11)

2011

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Optical constants detection in tin dioxide nano-size layers by surface plasmon resonance investigation

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.316-319

2011

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Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Characterization of high fluence irradiations on advanced triple junction solar cells

Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells

Thin GaAs Solar Cells For High Irradiation Levels

Crystallinity Control in Low-Temperature Growth of Poly-Crystalline Ge by Ion Beam Deposition

Low temperature growth of Germanium buffer films by ion beam sputter process

Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga 2 O 3 Nanowires

Effect of threading screw and edge dislocations on transport propertiesof 4H-SiC homoepitaxial layers

High-temperature (450°C) operation of InGaP solar cell under N2 ambient using refractory metal contacts

High band gap solar cells for underwater Photovoltaic applications

Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing: Group III Nitrides, SiC, and ZnO

Optimization of electrical performance of Cu(In,Ga)Se2 thin film solar cells sputtered from quaternary targets

Observation of dislocations in diffused 4H-SiC p - i - n diodesby electron-beam induced current

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-ray Topography

Effect of irradiation on gallium arsenide solar cells with multi quantum well structures

Radiation study in quantum well III-V multi-junction solar cells

Investigation of the electrical activity of partial dislocations in SiC p - i - n diodes

Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

Understanding defects in type-II superlattice IR photodiodes

Effect of crystal defects on reverse I-V characteristics of 4H-SiCAPDs

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B

Absorber Considerations for H-3 Betavoltaic Devices

Polarization characteristics of surface plasmon resonance in SnO2 nanocluster films

Polarization characteristics of surface plasmon resonance in SnO{sub 2} nanocluster films

Optical constants detection in tin dioxide nano-size layers by surface plasmon resonance investigation

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