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Evolution and subfunctionalization of CIPK6 homologous genes in regulating cotton drought resistance

Nature communications, 2024-07, Vol.15 (1), p.5733-17, Article 5733

2024

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Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Journal of alloys and compounds, 2019-04, Vol.780, p.476-481

2019

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Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

IEEE electron device letters, 2017-10, Vol.38 (10), p.1425-1428

2017

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A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

IEEE electron device letters, 2016-04, Vol.37 (4), p.377-380

2016

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Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

IEEE transactions on electron devices, 2010-07, Vol.57 (7), p.1492-1496

2010

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The flavonoid pathway regulates the petal colors of cotton flower

PloS one, 2013-08, Vol.8 (8), p.e72364-e72364

2013

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Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2475-2480

2015

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Drought response revealed by chromatin organization variation and transcriptional regulation in cotton

BMC biology, 2024-05, Vol.22 (1), p.114-114, Article 114

2024

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Tracing the origin and evolution history of methylation-related genes in plants

BMC plant biology, 2019-07, Vol.19 (1), p.307-307, Article 307

2019

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Genomic interrogation of a MAGIC population highlights genetic factors controlling fiber quality traits in cotton

Communications biology, 2022-01, Vol.5 (1), p.60-60, Article 60

2022

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Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

IEEE electron device letters, 2013-07, Vol.34 (7), p.855-857

2013

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An enhanced photosynthesis and carbohydrate metabolic capability contributes to heterosis of the cotton (Gossypium hirsutum) hybrid 'Huaza Mian H318', as revealed by genome-wide gene expression analysis

BMC genomics, 2021-04, Vol.22 (1), p.277-277, Article 277

2021

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Genome-wide identification, evolutionary estimation and functional characterization of two cotton CKI gene types

BMC plant biology, 2021-05, Vol.21 (1), p.1-229, Article 229

2021

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Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

IEEE electron device letters, 2014-12, Vol.35 (12), p.1197-1199

2014

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Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics

Solid-state electronics, 2018-03, Vol.141, p.13-17

2018

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Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.460-465

2011

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Mapping and validation of a fiber length QTL on chromosome D11 using two independent F2 populations of upland cotton

Molecular breeding, 2020-03, Vol.40 (3), Article 31

2020

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Genome-Wide Analysis of Cotton miRNAs During Whitefly Infestation Offers New Insights into Plant-Herbivore Interaction

International journal of molecular sciences, 2019-10, Vol.20 (21), p.5357

2019

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Genome-wide association study and transcriptome analysis reveal key genes controlling fruit branch angle in cotton

Frontiers in plant science, 2022-09, Vol.13, p.988647-988647

2022

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Polar semiconductor heterojunction structure energy band diagram considerations

Journal of applied physics, 2016-03, Vol.119 (12)

2016

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Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Advanced electronic materials, 2023-07, Vol.9 (7), p.n/a

2023

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High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

IEEE electron device letters, 2014-01, Vol.35 (1), p.33-35

2014

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Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated with Hydrogen Modulated In-situ pn Junction

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Identification of new cotton fiber-quality QTL by multiple genomic analyses and development of markers for genomic breeding

The Crop journal, 2024-06, Vol.12 (3), p.866-879

2024

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The Impact of Multiple Dimensions of Urbanization on CO2 Emissions: A Spatial and Threshold Analysis of Panel Data on China's Prefecture-Level Cities

Sustainable cities and society, 2021-10, Vol.73, p.103113, Article 103113

2021

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Evolution and subfunctionalization of CIPK6 homologous genes in regulating cotton drought resistance

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

The flavonoid pathway regulates the petal colors of cotton flower

Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Drought response revealed by chromatin organization variation and transcriptional regulation in cotton

Tracing the origin and evolution history of methylation-related genes in plants

Genomic interrogation of a MAGIC population highlights genetic factors controlling fiber quality traits in cotton

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

An enhanced photosynthesis and carbohydrate metabolic capability contributes to heterosis of the cotton (Gossypium hirsutum) hybrid 'Huaza Mian H318', as revealed by genome-wide gene expression analysis

Genome-wide identification, evolutionary estimation and functional characterization of two cotton CKI gene types

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

Mapping and validation of a fiber length QTL on chromosome D11 using two independent F2 populations of upland cotton

Genome-Wide Analysis of Cotton miRNAs During Whitefly Infestation Offers New Insights into Plant-Herbivore Interaction

Genome-wide association study and transcriptome analysis reveal key genes controlling fruit branch angle in cotton

Polar semiconductor heterojunction structure energy band diagram considerations

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated with Hydrogen Modulated In-situ pn Junction

Identification of new cotton fiber-quality QTL by multiple genomic analyses and development of markers for genomic breeding

The Impact of Multiple Dimensions of Urbanization on CO2 Emissions: A Spatial and Threshold Analysis of Panel Data on China's Prefecture-Level Cities

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