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Self-annealing characterization of electroplated copper films

Microelectronic engineering, 2000, Vol.50 (1), p.449-457

2000

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Two-step room temperature grain growth in electroplated copper

Journal of applied physics, 1999-10, Vol.86 (7), p.3642-3645

1999

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Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Journal of applied physics, 1998-09, Vol.84 (6), p.3226-3231

1998

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Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

IEEE electron device letters, 2006-02, Vol.27 (2), p.99-101

2006

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Impact of current crowding on electromigration-induced mass transport

Applied physics letters, 2004-01, Vol.84 (4), p.517-519

2004

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Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films

Journal of applied physics, 2004-01, Vol.95 (1), p.381-388

2004

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Christmas on the Magic Mountain (Thomas Mann). The Totentanz-Chapter and its medical and religious aspects

Deutsche medizinische Wochenschrift (1946), 2010-12, Vol.135 (51-52), p.2574

Max, K

2010

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Initial growth mechanism of atomic layer deposited TiN

Applied physics letters, 2004-05, Vol.84 (22), p.4571-4573

2004

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Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide

Microelectronic engineering, 2002-10, Vol.64 (1), p.131-142

2002

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Interface characterization of nanoscale laminate structures on dense dielectric substrates by x-ray reflectivity

Journal of applied physics, 2005-04, Vol.97 (8), p.084316-084316-9

2005

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Challenges for structural stability of ultra-low- k-based interconnects

Microelectronic engineering, 2004-07, Vol.75 (1), p.54-62

2004

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Investigation of barrier and slurry effects on the galvanic corrosion of copper

Microelectronic engineering, 2002-10, Vol.64 (1), p.117-124

2002

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Grain growth in copper interconnect lines

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.190-194

2004

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Corrosion of Narrow Copper Damascene Interconnects

Journal of the Electrochemical Society, 2004, Vol.151 (12), p.B636

2004

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Effects of surface relaxation on convergent‐beam electron diffraction analysis of stress in silicon

Journal of microscopy (Oxford), 2006-09, Vol.223 (3), p.249-252

2006

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Silicides for integrated circuits: TiSi2 and CoSi2

Materials science & engineering. R, Reports : a review journal, 1993-11, Vol.11 (2-3), p.53-153

MAEX, K

1993

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Porous low dielectric constant materials for microelectronics

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 2006-01, Vol.364 (1838), p.201-215

2006

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Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materials

Microelectronic engineering, 2002-01, Vol.60 (1-2), p.125-132

2002

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Factors affecting an efficient sealing of porous low- k dielectrics by physical vapor deposition Ta(N) thin films

Journal of applied physics, 2002-08, Vol.92 (3), p.1548-1554

2002

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The role of H in the Cu+ drift diffusion in plasma-deposited a-SiC:H

Journal of physics. Condensed matter, 2002-04, Vol.14 (13), p.3565-3574

2002

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First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts

Microelectronic engineering, 2005-06, Vol.80, p.272-279

2005

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Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

Applied physics letters, 2007-01, Vol.90 (5), p.054101-054101-3

2007

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Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Microelectronic engineering, 2004-05, Vol.71 (3-4), p.252-261

2004

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Stress evolution during Ni–Si compound formation for fully silicided (FUSI) gates

Microelectronic engineering, 2007-11, Vol.84 (11), p.2533-2536

2007

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Frequency dependence in interline capacitance measurements

IEEE transactions on instrumentation and measurement, 2002-06, Vol.51 (3), p.537-543

2002

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Self-annealing characterization of electroplated copper films

Two-step room temperature grain growth in electroplated copper

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

Impact of current crowding on electromigration-induced mass transport

Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films

Christmas on the Magic Mountain (Thomas Mann). The Totentanz-Chapter and its medical and religious aspects

Initial growth mechanism of atomic layer deposited TiN

Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide

Interface characterization of nanoscale laminate structures on dense dielectric substrates by x-ray reflectivity

Challenges for structural stability of ultra-low- k-based interconnects

Investigation of barrier and slurry effects on the galvanic corrosion of copper

Grain growth in copper interconnect lines

Corrosion of Narrow Copper Damascene Interconnects

Effects of surface relaxation on convergent‐beam electron diffraction analysis of stress in silicon

Silicides for integrated circuits: TiSi2 and CoSi2

Porous low dielectric constant materials for microelectronics

Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materials

Factors affecting an efficient sealing of porous low- k dielectrics by physical vapor deposition Ta(N) thin films

The role of H in the Cu+ drift diffusion in plasma-deposited a-SiC:H

First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts

Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Stress evolution during Ni–Si compound formation for fully silicided (FUSI) gates

Frequency dependence in interline capacitance measurements

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