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The influence of surface cleaning on the stability of Pd/GaAs contacts

Journal of materials science. Materials in electronics, 2001-11, Vol.12 (11), p.649-653

2001

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The thermal stability of laser annealed contacts based on palladium

Microelectronic engineering, 2000-12, Vol.54 (3), p.255-261

2000

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The Influence of Ti Surface Layer on Pt/(Ge or Sn)/Pd/Ti-GaAs Interface

Solid state phenomena, 2003-01, Vol.90-91, p.601

2003

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The influence of glow-discharge cleaning of Ge/Pd-GaAs on the specific contact resistivity

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002, 2002, p.202-205

2002

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Laser technology in the formation of AuPt and AuPtTi contacts

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002, 2002, p.198-201

2002

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Investigation of Ti/Al ohmic contact to N-type 6H-SiC

2008 International Conference on Advanced Semiconductor Devices and Microsystems, 2008, p.183-186

2008

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Thermal stability of Pt/doping element/Pd ohmic contacts to GaAs

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386), 2000, p.371-374

2000

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Laser-annealed deep contacts for layered structures

Journal of materials science. Materials in electronics, 1997-04, Vol.8 (2), p.95-98

1997

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Sn/Pd/GaAs ohmic contacts with reactive metals

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem, 2002, p.55-58

Machac, P.

2002

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Preparation of p-type GaAs layers for ohmic contact

Journal of materials science. Materials in electronics, 1995-04, Vol.6 (2), p.115-117, Article 115

1995

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Surface protection of titanium by Ti 5Si 3 silicide layer prepared by combination of vapour phase siliconizing and heat treatment

Journal of alloys and compounds, 2008, Vol.464 (1), p.179-184

2008

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W/Pt/Ge/Pd contact optimization for the measurement of GaAs quantum structures

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172), 1998, p.167-170

1998

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Laser annealed W/Sn contacts on N-type GaAs

Electronics letters, 1994-07, Vol.30 (14), p.1185-1187

1994

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Role of indium in Ge/Pd/GaAs contact structure

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004, 2004, p.41-44

2004

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Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, 2012, p.251-254

2012

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Nickel ohmic contact on silicon carbide

2006 International Conference on Advanced Semiconductor Devices and Microsystems, 2006, p.71-74

2006

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Si ohmic contacts on N-type SiC

2011 IEEE International Interconnect Technology Conference, 2011, p.1-3

2011

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Effects of Si interlayer on nickel and platinum ohmic contacts for N-type SiC

2009 32nd International Spring Seminar on Electronics Technology, 2009, p.1-4

2009

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Microwave GaAs Schottky diode

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem, 2002, p.125-128

2002

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The ohmic contacts on the layers for gas sensors

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386), 2000, p.379-382

2000

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