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Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

Thin solid films, 2021-09, Vol.734, p.138837, Article 138837

2021

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Thermal Barrier Phase Change Memory

ACS applied materials & interfaces, 2019-02, Vol.11 (5), p.5336-5343

2019

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Sinomenine regulates circTRPM7-related pathway to inhibit gastric cancer cell growth and metastasis

Chemical biology & drug design, 2023-10, Vol.102 (4), p.870-881

2023

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One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Nature communications, 2014-07, Vol.5 (1), p.4086

2014

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12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale, 2021-06, Vol.13 (23), p.1455-1461

2021

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Ge2Sb2Te5 Phase Change Memory Cell Featuring Platinum Tapered Heating Electrode For Low-Voltage Operation

Jpn J Appl Phys, 2010-02, Vol.49 (2), p.026503-026503-4

2010

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In-situ observation of Ge2Sb2Te5 crystallization at the passivated interface

Ceramics international, 2019-10, Vol.45 (15), p.19542-19546

2019

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Crystal-Like Glassy Structure in Sc-Doped BiSbTe Ensuring Excellent Speed and Power Efficiency in Phase Change Memory

ACS applied materials & interfaces, 2020-04, Vol.12 (14), p.16601-16608

2020

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High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

Scripta materialia, 2019-04, Vol.164, p.25-29

2019

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Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption

ACS applied materials & interfaces, 2019-03, Vol.11 (11), p.10848-10855

2019

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Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale, 2021-06, Vol.13 (23), p.168-169

2021

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The phase change memory features high-temperature characteristic based on Ge-Sb-Se-Te alloys

Materials letters, 2019-11, Vol.254, p.182-185

2019

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Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator

Applied surface science, 2010-03, Vol.256 (11), p.3499-3502

2010

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Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Materials today physics, 2020-12, Vol.15, p.100266, Article 100266

2020

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Study on the phase change behavior of nitrogen doped Bi2Te3 films

Journal of alloys and compounds, 2018-07, Vol.754, p.227-231

2018

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Constructing reliable PCM and OTS devices with an interfacial carbon layer

Journal of materials science. Materials in electronics, 2019-11, Vol.30 (22), p.20037-20042

2019

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Reducing structural change in the phase transition of Ge-doped Bi0.5Sb1.5Te3 to enable high-speed and low-energy memory switching

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (38), p.11813-11823

2019

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Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge 2 Sb 2 Te 5 and Its Influence on Crystallization Behavior

Journal of physical chemistry. C, 2019-05, Vol.123 (21), p.13377-13384

2019

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Study on the phase change behavior of nitrogen doped Bi^sub 2^Te^sub 3^ films

Journal of alloys and compounds, 2018-07, Vol.754, p.227

2018

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Study on the phase change behavior of nitrogen doped Bi 2 Te 3 films

Journal of alloys and compounds, 2018-07, Vol.754, p.227-231

2018

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Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

Scientific reports, 2018-10, Vol.8 (1), p.1-9, Article 15136

2018

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Electrical switching properties and structural characteristics of GeSe-GeTe filmsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr07832g

2019-01

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Enhanced performance of phase change memory by grain size reduction

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-03, Vol.10 (9), p.3585-3592

2022

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Ta-Doped Sb 2 Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Nano-micro letters, 2021-01, Vol.13 (1), p.33

2021

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Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae

Scientific reports, 2016-07, Vol.6 (1), p.30645-30645, Article 30645

2016

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Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

Thermal Barrier Phase Change Memory

Sinomenine regulates circTRPM7-related pathway to inhibit gastric cancer cell growth and metastasis

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Ge2Sb2Te5 Phase Change Memory Cell Featuring Platinum Tapered Heating Electrode For Low-Voltage Operation

In-situ observation of Ge2Sb2Te5 crystallization at the passivated interface

Crystal-Like Glassy Structure in Sc-Doped BiSbTe Ensuring Excellent Speed and Power Efficiency in Phase Change Memory

High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

The phase change memory features high-temperature characteristic based on Ge-Sb-Se-Te alloys

Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator

Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Study on the phase change behavior of nitrogen doped Bi2Te3 films

Constructing reliable PCM and OTS devices with an interfacial carbon layer

Reducing structural change in the phase transition of Ge-doped Bi0.5Sb1.5Te3 to enable high-speed and low-energy memory switching

Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge 2 Sb 2 Te 5 and Its Influence on Crystallization Behavior

Study on the phase change behavior of nitrogen doped Bi^sub 2^Te^sub 3^ films

Study on the phase change behavior of nitrogen doped Bi 2 Te 3 films

Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

Electrical switching properties and structural characteristics of GeSe-GeTe filmsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr07832g

Enhanced performance of phase change memory by grain size reduction

Ta-Doped Sb 2 Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae

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