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Secondary-ion mass spectrometry on δ-doped GaAs grown by molecular beam epitaxy

Applied physics letters, 1990-10, Vol.57 (17), p.1799-1801

1990

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Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation

Journal of applied physics, 1992, Vol.71 (1), p.215-220

1992

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CO-metal interaction in the presence of potassium: A site potential effect

Surface science, 1984-04, Vol.139 (2), p.369-378

1984

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Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition

Applied physics letters, 1991-04, Vol.58 (13), p.1416-1418

1991

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In-situ process for AlGaAs compound semiconductor : materials science and device fabrication

Journal of electronic materials, 1994-07, Vol.23 (7), p.625-634

1994

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Activation and diffusion characteristics of implanted Si and Be in Al0.5In0.5P

Applied physics letters, 1992-03, Vol.60 (9), p.1117-1119

1992

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Probing potassium on Ni(100) with adsorbed rare gas atoms

Surface science, 1986-03, Vol.167 (1), p.39-56

1986

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Hydrogenation of molecular beam epitaxial Ge0.36Si0.64 on Si

Applied physics letters, 1989-08, Vol.55 (7), p.684-686

1989

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Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

Electronics letters, 1989-09, Vol.25 (19), p.1315-1317

1989

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Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy

Journal of applied physics, 1993-09, Vol.74 (5), p.3150-3155

1993

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Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon

Applied surface science, 1995, Vol.84 (4), p.413-418

1995

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Potassium on Ni(100) probed by photoemission of coadsorbed xenon

Surface science, 1985-09, Vol.160 (1), p.70-74

1985

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The coadsorption of carbon monoxide and deuterium on potassium predosed Ni(100)

Surface science, 1984-01, Vol.140 (2), p.L259-L263

1984

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Behavior of intrinsic Si point defects during annealing in vacuum

Applied physics letters, 1995-09, Vol.67 (11), p.1558-1560

1995

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Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers

Journal of applied physics, 1995-03, Vol.77 (5), p.1948-1951

1995

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Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices

Applied physics letters, 1996-08, Vol.69 (9), p.1273-1275

1996

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The influence of TiSi2 and CoSi2 growth on Si native point defects: The role of the diffusing species

Applied physics letters, 1996-05, Vol.68 (20), p.2870-2872

1996

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Ultrashallow junctions for ULSI using As2+ implantation and rapid thermal anneal

IEEE electron device letters, 1992, Vol.13 (10), p.507-509

1992

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Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film

Journal of applied physics, 1997-07, Vol.82 (2), p.583-588

1997

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Time dependence of dopant diffusion in δ-doped Si films and properties of Si point defects

Applied physics letters, 1994-01, Vol.64 (3), p.312-314

1994

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Hydrogen plasma processing of GaAs and AlGaAs

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-11, Vol.11 (6), p.2025-2032

1993

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Thick Selective Electroless‐Plated Cobalt‐Nickel Alloy Contacts to CoSi2 : I . Material Properties

Journal of the Electrochemical Society, 1991-07, Vol.138 (7), p.2061-2069

1991

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GaAs surface modification by room-temperature hydrogen plasma passivation

Applied physics letters, 1992-05, Vol.60 (21), p.2681-2683

1992

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Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy

Journal of crystal growth, 1991-06, Vol.112 (2-3), p.343-353

1991

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Stress free and moisture insensitive silicon oxide dielectric films formed by molecular-beam deposition

Journal of applied physics, 1995-09, Vol.78 (5), p.3315-3322

1995

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Secondary-ion mass spectrometry on δ-doped GaAs grown by molecular beam epitaxy

Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation

CO-metal interaction in the presence of potassium: A site potential effect

Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition

In-situ process for AlGaAs compound semiconductor : materials science and device fabrication

Activation and diffusion characteristics of implanted Si and Be in Al0.5In0.5P

Probing potassium on Ni(100) with adsorbed rare gas atoms

Hydrogenation of molecular beam epitaxial Ge0.36Si0.64 on Si

Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy

Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon

Potassium on Ni(100) probed by photoemission of coadsorbed xenon

The coadsorption of carbon monoxide and deuterium on potassium predosed Ni(100)

Behavior of intrinsic Si point defects during annealing in vacuum

Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers

Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices

The influence of TiSi2 and CoSi2 growth on Si native point defects: The role of the diffusing species

Ultrashallow junctions for ULSI using As2+ implantation and rapid thermal anneal

Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film

Time dependence of dopant diffusion in δ-doped Si films and properties of Si point defects

Hydrogen plasma processing of GaAs and AlGaAs

Thick Selective Electroless‐Plated Cobalt‐Nickel Alloy Contacts to CoSi2 : I . Material Properties

GaAs surface modification by room-temperature hydrogen plasma passivation

Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy

Stress free and moisture insensitive silicon oxide dielectric films formed by molecular-beam deposition

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