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Reliability Challenges with Ultra-Low k Interlevel Dielectrics

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1835-1841

2004

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Divergence effects in monochromatic x-ray microdiffraction using tapered capillary optics

Review of scientific instruments, 2000-05, Vol.71 (5), p.1991-2000

2000

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Experimental study of nanoscale Co damascene BEOL interconnect structures

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.40-42

2016

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Topographic measurement of electromigration-induced stress gradients in aluminum conductor lines

Applied physics letters, 2000-06, Vol.76 (25), p.3726-3728

2000

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Towards an appropriate acceleration model for beol tddb

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.DI-5-1-DI-5-6

2016

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Novel low k Dielectric materials for nano device interconnect technology

2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2020, p.117-118

2020

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Electrolyte Additive Chemistry and Feature Size-Dependent Impurity Incorporation for Cu Interconnects

Journal of the Electrochemical Society, 2012-01, Vol.159 (10), p.D563-D569

2012

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Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.222-228

2004

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Low-field TDDB reliability data to enable accurate lifetime predictions

2014 IEEE International Reliability Physics Symposium, 2014, p.BD.4.1-BD.4.4

2014

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Probing the Interface Barriers of Dopant-Segregated Silicide-Si Diodes With Internal Photoemission

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2027-2032

2012

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Kinetics of Indentation Cracking in Glass

Journal of the American Ceramic Society, 1993-05, Vol.76 (5), p.1096-1105

1993

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Low Hydrogen Silicon Carbon Nitride Cap for High Performance Sub-10 nm Cu-Low k Interconnect

ECS transactions, 2017, Vol.77 (5), p.111-120

2017

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Delamination from edge flaws

Proceedings of the Royal Society. A, Mathematical and physical sciences, 1994-11, Vol.447 (1930), p.271-279

1994

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Low Hydrogen Silicon Carbon Nitride Cap for High Performance Sub-10 nm Cu-Low k Interconnect

ECS journal of solid state science and technology, 2017, Vol.6 (7), p.P429-P434

2017

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Materials and scaling effects on on-chip interconnect reliability

MRS proceedings, 2013, Vol.1559 (1), Article mrss13-1559-aa07-01

2013

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Application of Nanoindentation to Characterize Fracture in ILD Films Used in the BEOL

MRS proceedings, 2005, Vol.863, Article B8.18

2005

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Characterization of substrate/thin-film interfaces with x-ray microdiffraction

Applied physics letters, 1998-06, Vol.72 (25), p.3338-3340

1998

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Effect of moisture on the time dependent dielectric breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric

2005 IEEE International Integrated Reliability Workshop, 2005, p.5 pp.

2005

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Effect of H2O on TDDB for a range of ULK ILD materials with varying damage resistance for robust and weak liners

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.DI-7-1-DI-7-5

2016

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Real-time x-ray microbeam characterization of electromigration effects in Al(Cu) wires

Applied physics letters, 2001-04, Vol.78 (18), p.2712-2714

2001

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Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits

2017 IEEE International Interconnect Technology Conference (IITC), 2017, p.1-4

2017

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Grain-size effects in the indentation fracture of MgO

Journal of materials science, 1992-09, Vol.27 (17), p.4751-4761

1992

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Pore orientation and silylation effects on mesoporous silica film properties

Applied physics letters, 2009-03, Vol.94 (9), p.093502-093502-3

2009

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Porous Organosilicates for On-Chip Dielectric Applications

MRS proceedings, 1999, Vol.565, Article 3

1999

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Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects

ECS transactions, 2014, Vol.61 (3), p.17-28

2014

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Reliability Challenges with Ultra-Low k Interlevel Dielectrics

Divergence effects in monochromatic x-ray microdiffraction using tapered capillary optics

Experimental study of nanoscale Co damascene BEOL interconnect structures

Topographic measurement of electromigration-induced stress gradients in aluminum conductor lines

Towards an appropriate acceleration model for beol tddb

Novel low k Dielectric materials for nano device interconnect technology

Electrolyte Additive Chemistry and Feature Size-Dependent Impurity Incorporation for Cu Interconnects

Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects

Low-field TDDB reliability data to enable accurate lifetime predictions

Probing the Interface Barriers of Dopant-Segregated Silicide-Si Diodes With Internal Photoemission

Kinetics of Indentation Cracking in Glass

Low Hydrogen Silicon Carbon Nitride Cap for High Performance Sub-10 nm Cu-Low k Interconnect

Delamination from edge flaws

Low Hydrogen Silicon Carbon Nitride Cap for High Performance Sub-10 nm Cu-Low k Interconnect

Materials and scaling effects on on-chip interconnect reliability

Application of Nanoindentation to Characterize Fracture in ILD Films Used in the BEOL

Characterization of substrate/thin-film interfaces with x-ray microdiffraction

Effect of moisture on the time dependent dielectric breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric

Effect of H2O on TDDB for a range of ULK ILD materials with varying damage resistance for robust and weak liners

Real-time x-ray microbeam characterization of electromigration effects in Al(Cu) wires

Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits

Grain-size effects in the indentation fracture of MgO

Pore orientation and silylation effects on mesoporous silica film properties

Porous Organosilicates for On-Chip Dielectric Applications

Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects

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