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Long wavelength (λ > 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design

Applied physics letters, 2021-09, Vol.119 (13)

2021

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Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

ACS photonics, 2018-04, Vol.5 (4), p.1512-1520

2018

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Growth and characterization of InSb on (100) Si for mid-infrared application

Applied surface science, 2018-05, Vol.440, p.939-945

2018

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Beam combining of a broadly and continuously tunable quantum cascade laser

Optics express, 2022-09, Vol.30 (20), p.35999-36009

2022

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High Electrical Resistivity 1.55~\mu m Photoconductive Switch Using a Barrier Structure

IEEE photonics technology letters, 2019-10, Vol.31 (20), p.1670-1673

2019

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Time-resolved photoluminescence of MBE-grown 1 eV GaAsSbN for multi-junction solar cells

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, p.1-5

2015

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High Electrical Resistivity [Formula Omitted]m Photoconductive Switch Using a Barrier Structure

IEEE photonics technology letters, 2019-01, Vol.31 (20), p.1670

2019

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Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

Journal of crystal growth, 2018-05, Vol.490, p.97-103

2018

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Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

Applied surface science, 2018-01, Vol.427, p.876-883

2018

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Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Authors’ reply

Singapore medical journal, 2018-08, Vol.59 (8), p.451-451

2018

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Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

Optics express, 2017-12, Vol.25 (25), p.31853-31862

2017

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Epidemiology of paediatric poisoning presenting to a children's emergency department in Singapore over a five-year period

Singapore medical journal, 2018-05, Vol.59 (5), p.247-250

2018

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Room Temperature 3.5-[Formula Omitted] Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

IEEE photonics technology letters, 2016-01, Vol.28 (15), p.1653

2016

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Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4‐junction solar cells

Progress in photovoltaics, 2017-11, Vol.25 (11), p.887-895

2017

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Epitaxy growth and characterization of InAs p-i-n photodetector through ion exchange for mid-infrared detection on Si substrates

MRS communications, 2018-09, Vol.8 (3), p.1085-1091

2018

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Si substrate based GaAs/AlGaAs quantum well infrared photodetector with Ge buffer

2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 2021, p.1-3

2021

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Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Journal of applied physics, 2015-06, Vol.117 (22)

2015

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Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures

Progress in photovoltaics, 2017-04, Vol.25 (4), p.327-332

2017

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Growth of 1-eV GaNAsSb-based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios

Progress in photovoltaics, 2016-03, Vol.24 (3), p.340-347

2016

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Monolithic integration of InGaAs n-FETs and lasers on Ge substrate

Optics express, 2017-03, Vol.25 (5), p.5146-5155

2017

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Strain-relaxed buffer technology based on metamorphic In sub(x)Al sub(1-x)As

Journal of crystal growth, 2015-08, Vol.424, p.68-76

2015

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First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.409-410

2022

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1EV GANxAS1-x-ySBy material for lattice-matched III-V solar cell implementation on GaAs and Ge

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.000076-000080

2009

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First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Hetero Integrated with Si Photonics on SOI Platform for 1550 nm Detection

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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Long wavelength (λ > 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design

Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

Growth and characterization of InSb on (100) Si for mid-infrared application

Beam combining of a broadly and continuously tunable quantum cascade laser

High Electrical Resistivity 1.55~\mu m Photoconductive Switch Using a Barrier Structure

Time-resolved photoluminescence of MBE-grown 1 eV GaAsSbN for multi-junction solar cells

High Electrical Resistivity [Formula Omitted]m Photoconductive Switch Using a Barrier Structure

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

Authors’ reply

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

Epidemiology of paediatric poisoning presenting to a children's emergency department in Singapore over a five-year period

Room Temperature 3.5-[Formula Omitted] Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4‐junction solar cells

Epitaxy growth and characterization of InAs p-i-n photodetector through ion exchange for mid-infrared detection on Si substrates

Si substrate based GaAs/AlGaAs quantum well infrared photodetector with Ge buffer

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures

Growth of 1-eV GaNAsSb-based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios

Monolithic integration of InGaAs n-FETs and lasers on Ge substrate

Strain-relaxed buffer technology based on metamorphic In sub(x)Al sub(1-x)As

First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform

1EV GANxAS1-x-ySBy material for lattice-matched III-V solar cell implementation on GaAs and Ge

First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Hetero Integrated with Si Photonics on SOI Platform for 1550 nm Detection

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