UB Paderborn / Katalog / Suche / in CDI

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

Journal of applied physics, 2016-06, Vol.119 (22)

2016

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Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties

Advanced science, 2023-02, Vol.10 (6), p.e2201842-n/a

2023

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Compositional and strain analysis of In(Ga)N/GaN short period superlattices

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Are Extended Defects a Show Stopper for Future III-V CMOS Technologies

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12001

2019

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Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction

Journal of physics. Conference series, 2019, Vol.1190 (1)

2019

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Structural anisotropic properties of a -plane GaN epilayers grown on r -plane sapphire by molecular beam epitaxy

Journal of applied physics, 2014-06, Vol.115 (21)

2014

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Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12010

2019

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DLTS study of extended defects in HgCdTe photodiodes

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12012

2019

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Corneal biomechanics and diagnostics: a review

International ophthalmology, 2024-03, Vol.44 (1), p.132-132, Article 132

2024

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Evaluation of qPCR reference genes in GH-overexpressing transgenic zebrafish (Danio rerio)

Scientific reports, 2020-07, Vol.10 (1), p.12692-12692, Article 12692

2020

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The novel phospho‐non‐steroidal anti‐inflammatory drugs, OXT‐328, MDC‐22 and MDC‐917, inhibit adjuvant‐induced arthritis in rats

British journal of pharmacology, 2011-04, Vol.162 (7), p.1521-1533

2011

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Cracks and dislocations at Vickers, Berkovich and cube corner indentations in (0001) GaN single crystals

Physica status solidi. C, 2013-01, Vol.10 (1), p.76-79

2013

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Strain-Induced Band Gap Variation in InGaN/GaN Short Period Superlattices

Crystals (Basel), 2023-04, Vol.13 (4), p.700

2023

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Deformation and fracture in (0001) and (10-10) GaN single crystals

Materials science and technology, 2018-09, Vol.34 (13), p.1531-1538

2018

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The Critical Temperature of Superconducting Aluminum Films

Physics of metals and metallography, 2023, Vol.124 (1), p.53-57

2023

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Nanocarried antioxidants in freezing extenders for boar spermatozoa

Andrologia, 2021-11, Vol.53 (10), p.e14199-n/a

2021

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Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.878-888

2011

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Probing the structural role of Cr in stabilized tannery wastes with X-ray absorption fine structure spectroscopy

Journal of hazardous materials, 2021-01, Vol.402, p.123734, Article 123734

2021

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Safety assessment of poly(N-vinylcaprolactam) as a potential drug carrier in extenders for boar sperm cryopreservation

Toxicology in vitro, 2020-06, Vol.65, p.104766-104766, Article 104766

2020

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Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories Through Oxygen Doping

IEEE transactions on nanotechnology, 2021, Vol.20, p.356-364

2021

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Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Optical Encoding by Plasmon-Based Patterning: Hard and Inorganic Materials Become Photosensitive

Nano letters, 2012-01, Vol.12 (1), p.259-263

2012

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The emotional and practical experiences of formula‐feeding mothers

Maternal and child nutrition, 2017-10, Vol.13 (4), p.n/a

2017

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The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

Scientific reports, 2020-10, Vol.10 (1), p.17371-17371, Article 17371

2020

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Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties

Compositional and strain analysis of In(Ga)N/GaN short period superlattices

Are Extended Defects a Show Stopper for Future III-V CMOS Technologies

Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction

Structural anisotropic properties of a -plane GaN epilayers grown on r -plane sapphire by molecular beam epitaxy

Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions

DLTS study of extended defects in HgCdTe photodiodes

Corneal biomechanics and diagnostics: a review

Evaluation of qPCR reference genes in GH-overexpressing transgenic zebrafish (Danio rerio)

The novel phospho‐non‐steroidal anti‐inflammatory drugs, OXT‐328, MDC‐22 and MDC‐917, inhibit adjuvant‐induced arthritis in rats

Cracks and dislocations at Vickers, Berkovich and cube corner indentations in (0001) GaN single crystals

Strain-Induced Band Gap Variation in InGaN/GaN Short Period Superlattices

Deformation and fracture in (0001) and (10-10) GaN single crystals

The Critical Temperature of Superconducting Aluminum Films

Nanocarried antioxidants in freezing extenders for boar spermatozoa

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Probing the structural role of Cr in stabilized tannery wastes with X-ray absorption fine structure spectroscopy

Safety assessment of poly(N-vinylcaprolactam) as a potential drug carrier in extenders for boar sperm cryopreservation

Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers

Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories Through Oxygen Doping

Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers

Optical Encoding by Plasmon-Based Patterning: Hard and Inorganic Materials Become Photosensitive

The emotional and practical experiences of formula‐feeding mothers

The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

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