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A 4.15 kV 9.07-m/spl Omega/.cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-02, Vol.26 (2), p.99-101

2005

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A 4.15 kV 9.07-m[Omega]·cm2 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-02, Vol.26 (2), p.99

2005

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A 4.15 kV 9.07-m Omega .cm super(2) 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-01, Vol.26 (2)

2005

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Influence of 4H-SiC Growth Conditions on Micropipe Dissociation

Japanese Journal of Applied Physics, 2002-10, Vol.41 (Part 2, No. 10B), p.L1137-L1139

2002

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Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Materials Science Forum, 2005-05, Vol.483-485, p.721-724

2005

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Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor

Journal of crystal growth, 2001-07, Vol.237-239 (2), p.1206-1212

2001

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Growth and electrical characterization of lightly-doped thick 4H-SiC epilayers

Materials science forum, 2001-10, Vol.389-393 (1), p.171-174

2001

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In situ analysis of thermal oxidation on H-terminated 4H-SiC surfaces

Materials science forum, 2001-10, Vol.389-393 (1), p.709-712

2001

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Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor

MRS proceedings, 2000, Vol.640, Article H2.12

2000

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The investigation of 4H-SiC/SiO sub 2 interfaces by optical and electrical measurements

Materials science forum, 2001-10, Vol.389-393 (2), p.1013-1016

2001

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Growth of thick and low-doped 4H-SiC epitaxial layers in a vertical radiant-heating VPE reactor

Electrical engineering in Japan, 2002-03, Vol.138 (4), p.18-25

2002

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Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor

Journal of crystal growth, 2002, Vol.237-39, p.1206-1212

2002

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Photoemission study of vanadium deposition on Si(100)2 × 1

Applied surface science, 1997, Vol.113, p.384-387

1997

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Co overlayer formation process onSi(100)2 × 1 studied by SR-PES

Applied surface science, 1996-07, Vol.100, p.513-517

1996

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Atomic and electronic structures of heat treated 6H-SiC surface

Applied surface science, 1998, Vol.130-32, p.593-597

1998

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Photoemission study of 6H-SiC(0001)Si face

Applied surface science, 1997, Vol.117-18, p.794-797

1997

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Photoemission study of vanadium deposition on Si(100)2 x 1

Applied surface science, 1997, Vol.113114, p.384-387

1997

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Co overlayer formation process on Si(100) 2 × 1 studied by SR-PES

Applied surface science, 1996, Vol.100-01, p.513-517

1996

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Case of Mycobacterium haemophilum misdiagnosed as Mycobacterium intracellulare due to one base insertion in the bacterial genome

Journal of dermatology, 2018-01, Vol.45 (1), p.64-66

2018

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Comparison between phage-open-reading frame typing and automated repetitive-sequence-based PCR for typing MRSA isolates

Journal of antibiotics, 2014-08, Vol.67 (8), p.565-569

2014

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Comparison of the clinical risk factors between Candida albicans and Candida non-albicans species for bloodstream infection

Journal of antibiotics, 2014-04, Vol.67 (4), p.311-314

2014

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Laboratory Surveillance for Prospective Plasmid-Mediated AmpC β-Lactamases in the Kinki Region of Japan

Journal of Clinical Microbiology, 2010-09, Vol.48 (9), p.3267-3273

2010

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Genetically modified Bifidobacterium displaying Salmonella -antigen protects mice from lethal challenge of Salmonella Typhimurium in a murine typhoid fever model

Vaccine, 2010-09, Vol.28 (41), p.6684-6691

2010

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A case of nosocomial Legionella pneumonia associated with a contaminated hospital cooling tower

Journal of infection and chemotherapy : official journal of the Japan Society of Chemotherapy, 2014-01, Vol.20 (1), p.68-70

2014

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Culture-Proven Neonatal Sepsis in Japanese Neonatal Care Units in 2006–2008

Neonatology (Basel, Switzerland), 2012-01, Vol.102 (1), p.75-80

2012

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A 4.15 kV 9.07-m/spl Omega/.cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

A 4.15 kV 9.07-m[Omega]·cm2 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

A 4.15 kV 9.07-m Omega .cm super(2) 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

Influence of 4H-SiC Growth Conditions on Micropipe Dissociation

Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor

Growth and electrical characterization of lightly-doped thick 4H-SiC epilayers

In situ analysis of thermal oxidation on H-terminated 4H-SiC surfaces

Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor

The investigation of 4H-SiC/SiO sub 2 interfaces by optical and electrical measurements

Growth of thick and low-doped 4H-SiC epitaxial layers in a vertical radiant-heating VPE reactor

Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor

Photoemission study of vanadium deposition on Si(100)2 × 1

Co overlayer formation process onSi(100)2 × 1 studied by SR-PES

Atomic and electronic structures of heat treated 6H-SiC surface

Photoemission study of 6H-SiC(0001)Si face

Photoemission study of vanadium deposition on Si(100)2 x 1

Co overlayer formation process on Si(100) 2 × 1 studied by SR-PES

Case of Mycobacterium haemophilum misdiagnosed as Mycobacterium intracellulare due to one base insertion in the bacterial genome

Comparison between phage-open-reading frame typing and automated repetitive-sequence-based PCR for typing MRSA isolates

Comparison of the clinical risk factors between Candida albicans and Candida non-albicans species for bloodstream infection

Laboratory Surveillance for Prospective Plasmid-Mediated AmpC β-Lactamases in the Kinki Region of Japan

Genetically modified Bifidobacterium displaying Salmonella -antigen protects mice from lethal challenge of Salmonella Typhimurium in a murine typhoid fever model

A case of nosocomial Legionella pneumonia associated with a contaminated hospital cooling tower

Culture-Proven Neonatal Sepsis in Japanese Neonatal Care Units in 2006–2008

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