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Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2010-01, Vol.166 (1), p.46-49

2010

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Effect of growth rate on the composition fluctuation of In Ga As N ∕ Ga As single quantum wells

Journal of applied physics, 2006-06, Vol.99 (12), p.123718-123718-5

2006

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A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT

IEEE electron device letters, 2007-02, Vol.28 (2), p.96-99

2007

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Integrating ZigBee lighting control into existing building automation systems

IET Conference Proceedings, 2012, p.3.48

2012

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Strain relaxation in In As ∕ In Ga As quantum dots investigated by photoluminescence and capacitance-voltage profiling

Applied physics letters, 2005-09, Vol.87 (14), p.141911-141911-3

2005

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Cell Cycle-Dependent Modulation of Telomerase Activity in Tumor Cells

Proceedings of the National Academy of Sciences - PNAS, 1996-06, Vol.93 (12), p.6091-6095

1996

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Strain relaxation and induced defects in InAsSb self-assembledquantum dots

Applied physics letters, 2006-06, Vol.88 (23), p.233113-233113-3

2006

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A Novel Dilute Antimony Channel In@@d0.2@Ga@@d0.8@AsSb/GaAs HEMT

IEEE electron device letters, 2007-02, Vol.28 (2), p.96-99

2007

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A Novel Dilute Antimony Channel In sub(0.2)Ga sub(0.8)AsSb/GaAs HEMT

IEEE electron device letters, 2007-02, Vol.28 (2), p.96-99

2007

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N incorporation into InGaAs cap layer in InAs self-assembledquantum dots

Journal of applied physics, 2005-12, Vol.98 (11), p.113525-113525-5

2005

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Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

IEEE photonics technology letters, 2005-08, Vol.17 (8), p.1590-1592

2005

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Single-mode monolithic quantum-dot VCSEL in 1.3 mum with sidemode suppression ratio over 30 dB

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.847-849

2006

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Temperature-dependent optical properties of In0.34GaO.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 gm application grown by molecular beam epitaxy

Journal of crystal growth, 2006-05, Vol.291 (1), p.27-33

2006

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1.3 µm quantum dot vertical-cavity surface-emitting laser with external light injection

Electronics letters, 2005-10, Vol.41 (22), p.1

2005

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Singlemode InAs quantum dot photonic crystal VCSELs

Electronics letters, 2005-09, Vol.41 (20), p.1-1

2005

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High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mm applications grown by molecular beam epitaxy

Journal of crystal growth, 2004-02, Vol.262 (1-4), p.84-88

2004

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1.3-mum InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418-420

2006

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High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Journal of crystal growth, 2004, Vol.262 (1-4), p.84-88

2004

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High-power (200mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 µm

Electronics letters, 2003-11, Vol.39 (24), p.1

2003

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1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection

Electronics letters, 2005-01, Vol.41 (22), p.1-1

2005

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High-power (200mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 mu m

Electronics letters, 2003-11, Vol.39 (24), p.1-1

2003

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Telomerase activity in normal human endothelial cells

Anticancer research, 1997-03, Vol.17 (2A), p.827

1997

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Molecular-beam-epitaxy growth of high-quality InGaAsN∕GaAs quantum well lasers emitting at 1.3μm

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-11, Vol.22 (6), p.2663-2667

2004

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Transcription factor decoy approach to decipher the role of NF-kappa B in oncogenesis

Anticancer research, 1996-01, Vol.16 (1), p.61

1996

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Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing

Japanese Journal of Applied Physics, 2004-09, Vol.43 (9A), p.L1150

2004

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Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

Effect of growth rate on the composition fluctuation of In Ga As N ∕ Ga As single quantum wells

A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT

Integrating ZigBee lighting control into existing building automation systems

Strain relaxation in In As ∕ In Ga As quantum dots investigated by photoluminescence and capacitance-voltage profiling

Cell Cycle-Dependent Modulation of Telomerase Activity in Tumor Cells

Strain relaxation and induced defects in InAsSb self-assembledquantum dots

A Novel Dilute Antimony Channel In@@d0.2@Ga@@d0.8@AsSb/GaAs HEMT

A Novel Dilute Antimony Channel In sub(0.2)Ga sub(0.8)AsSb/GaAs HEMT

N incorporation into InGaAs cap layer in InAs self-assembledquantum dots

Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

Single-mode monolithic quantum-dot VCSEL in 1.3 mum with sidemode suppression ratio over 30 dB

Temperature-dependent optical properties of In0.34GaO.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 gm application grown by molecular beam epitaxy

1.3 µm quantum dot vertical-cavity surface-emitting laser with external light injection

Singlemode InAs quantum dot photonic crystal VCSELs

High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mm applications grown by molecular beam epitaxy

1.3-mum InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

High-power (200mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 µm

1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection

High-power (200mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 mu m

Telomerase activity in normal human endothelial cells

Molecular-beam-epitaxy growth of high-quality InGaAsN∕GaAs quantum well lasers emitting at 1.3μm

Transcription factor decoy approach to decipher the role of NF-kappa B in oncogenesis

Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing

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